Infineon Technologies S70KS1281DPBHI020

Overview

S70KS1281DPBHI020 from Infineon Technologies (formerly Cypress) is a 128 Mb (16 MB) HyperRAM™ self-refresh DRAM with DDR interface, 1.8 V I/O supply, 12-signal bus, and 24-ball FBGA package. It delivers 333 MBps throughput at 166 MHz, supports wrapped/linear burst modes up to 128 bytes, and integrates autonomous refresh control for pseudo-static operation in embedded systems requiring high bandwidth and low pin count.

For engineers reviewing the S70KS1281DPBHI020 datasheet, S70KS1281DPBHI020 pinout, S70KS1281DPBHI020 application, or S70KS1281DPBHI020 equivalent, key selection factors include its HyperBus interface timing (DCARS), RWDS bidirectional strobe behavior, 1.8 V VCCQ compatibility, deep power-down current (20 µA), and dual-die stack architecture enabling 128 Mb density in a single 5×5 mm FBGA.

Technical Context

This device implements a dual-die stacked 64 Mb HyperRAM architecture in one package, operating as a single logical 128 Mb memory with unified command/address decoding and synchronized self-refresh. Its HyperBus interface uses center-aligned DDR transfers on DQ[7:0] with RWDS acting as both latency indicator and source-synchronous read strobe/write mask.

The DCARS (DDR Center-Aligned Read Strobe) function shifts RWDS phase relative to CK to align transitions within the read data eye, enabling reliable capture at 166 MHz. All transactions begin with CS# assertion and six-byte CA transfer, followed by configurable initial latency (1× or 2×) determined by RWDS level during CA phase.

Key Specifications

Pinout & Package

24-ball FBGA (5 × 5 mm, 0.8 mm pitch) with ball-out optimized for signal integrity and thermal dissipation in space-constrained designs. Pin functions validated per Infineon Document 001-97964 Rev. *N.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed low-pin-count memory applications.

Compared with S70KL1281DPBHI020, the 1.8 V S70KS1281DPBHI020 offers 66% higher bandwidth and 30% lower active current but requires differential clock routing; versus IS66WV1288GBLL-15BLI, it trades deterministic latency for 4× density and 70% lower pin count at the cost of DDR protocol complexity.

Availability

S70KS1281DPBHI020 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial HMIs, and edge AI accelerators requiring stable component supply, long-term lifecycle assurance, and qualified automotive-grade packaging.

Supply support for S70KS1281DPBHI020 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, sensing, and connectivity solutions for automotive, industrial, and IoT markets.

This part belongs to the HyperRAM™ product line, designed specifically to replace parallel PSRAM and low-density SDRAM in resource-constrained embedded systems needing high bandwidth with minimal board area and signal count.

FAQ

What is the function of the RWDS pin during HyperBus read and write operations?

RWDS serves three distinct roles: during command/address transfer, it outputs a level indicating required initial latency; during read bursts, it acts as a source-synchronous edge-aligned read strobe; during write bursts, it functions as a byte mask (HIGH = masked, LOW = written). This bidirectional behavior is fundamental to HyperBus timing compliance and must be correctly terminated per Infineon layout guidelines.

Does S70KS1281DPBHI020 require external refresh management from the host controller?

No. The device contains fully autonomous self-refresh circuitry that executes internal refresh cycles without host intervention. The host sees only a pseudo-static interface - no refresh commands, counters, or scheduling are needed. However, the host must honor RWDS-driven initial latency indications and avoid excessively long bursts that could block internal refresh windows.

Can S70KS1281DPBHI020 operate with single-ended clock instead of differential CK/CK#?

No. This 1.8 V variant mandates differential clock signaling (CK/CK#) as specified in the HyperBus standard. Single-ended clock operation is only supported on 3.0 V variants like S70KL1281. Attempting single-ended drive on S70KS1281DPBHI020 will violate setup/hold timing and cause transaction failures.

What is the significance of "Not Recommended for New Designs" (NRND) status for this part?

Infineon has designated S70KS1281DPBHI020 as NRND per document 001-97964 Rev. *N, indicating future production may be limited. Aetrix Electronics maintains active inventory and supply chain continuity support, including last-time-buy planning and migration path guidance to next-generation HyperRAM devices such as the S70KL/S70KS series with extended lifecycle commitments.