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Infineon Technologies S70KS1281DPBHI023
- Part No.:
- S70KS1281DPBHI023
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 24-VBGA
- Datasheet:
-
S70KS1281DPBHI023.pdf
- Description:
- IC PSRAM 128MBIT PAR 24FBGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,928
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Product details
Overview
S70KS1281DPBHI023 from Infineon Technologies (formerly Cypress) is a 128 Mb (16 MB) HyperRAM™ self-refresh DRAM with DDR interface, 1.8 V I/O supply, 12-signal bus, and 24-ball FBGA package. It delivers 333 MBps throughput at 166 MHz, supports configurable wrapped/linear bursts up to 128 bytes, and integrates on-die refresh control for pseudo-static operation in embedded graphics and application processors.
For engineers reviewing the S70KS1281DPBHI023 datasheet, S70KS1281DPBHI023 pinout, S70KS1281DPBHI023 application, or S70KS1281DPBHI023 equivalent, key selection criteria include DDR timing compliance, RWDS-based read strobe alignment, DCARS phase-shifted clock handling, burst-length configurability, and Deep Power Down current (20 µA @ 1.8 V).
Technical Context
This device implements a dual-die stacked architecture combining two 64 Mb HyperRAM dies in one FBGA package, enabling 128 Mb density while retaining the HyperBus™ low-pin-count DDR interface. It uses center-aligned command/address transfers and edge-aligned read data synchronized to RWDS transitions.
The DDR interface operates with differential clock (CK/CK#), 8-bit bidirectional DQ[7:0], chip select (CS#), and bidirectional RWDS serving as both initial latency indicator and source-synchronous read strobe/write mask. DCARS functionality shifts RWDS phase relative to CK to center it within the read data eye.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 128 Mb (16 MB) - dual-die stack of two 64 Mb HyperRAM devices |
| Data Bus Width | 8-bit DQ[7:0] - low-signal-count interface requiring only 12 total pins |
| Max Throughput | 333 MBps - achieved via DDR transfers at 166 MHz clock (1.8 V) |
| Burst Length | Configurable: 16/32/64/128 bytes - supports cache-line fill (wrapped) and streaming (linear) |
| Deep Power Down Current | 20 µA @ 1.8 V, 105 °C - enables ultra-low-power standby in battery-sensitive systems |
| Access Latency | 36 ns tACC @ 166 MHz - defines minimum time from CS# assertion to first valid read data |
| RWDS Function | Bidirectional: output for initial latency indication & read strobe; input for write masking |
Pinout & Package
Package: 24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch), RoHS-compliant, moisture sensitivity level 3.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CK / CK# | Differential clock inputs | Source-synchronous timing reference for all DDR transfers; required for DCARS phase alignment |
| CS# | Chip select input | Active-low enable for command/address and data transactions; controls entry to Deep Power Down when held high |
| RWDS | Bidirectional strobe/mask | Indicates refresh latency pre-transaction; acts as read data strobe (edge-aligned) or write mask (HIGH = masked) |
| DQ[7:0] | Bidirectional data bus | 8-bit DDR data path carrying command, address, and payload; LV-CMOS compatible at 1.8 V |
| VCC / VCCQ | Power supplies | VCC = 1.8 V core supply; VCCQ = 1.8 V I/O supply - decoupling critical for signal integrity |
| RESET# | Hardware reset input | Asynchronous active-low reset that clears internal state and forces power-on initialization sequence |
Key Features
| Feature | Design Value |
|---|---|
| Self-refresh DRAM architecture | On-die refresh controller eliminates host-side refresh management, presenting PSRAM-like interface |
| DCARS (DDR Center-Aligned Read Strobe) | Phase-shifts RWDS relative to CK to center strobe edge in read data eye - improves timing margin at 166 MHz |
| Configurable burst mode per transaction | Each read/write command selects wrapped (cache line) or linear (streaming) burst - enables runtime optimization |
| Low-power Deep Power Down mode | 20 µA quiescent current at 1.8 V enables >10-year battery life in always-on IoT endpoints |
| HyperBus™ interface compatibility | Pin- and protocol-compatible with S27KS/S70KS family - allows drop-in migration within same voltage grade |
Applications
| Automotive Instrument Clusters | Industrial HMI Displays |
|---|---|
Use Scenario: Real-time rendering of vector graphics and animated gauges in digital dashboards with <50 ms boot-to-display. IC Role / Device Role / Timing Role: Offloads frame buffer memory from MCU, providing high-bandwidth DDR access to GPU or display controller via HyperBus. Use Value: 333 MBps throughput sustains 1080p@60fps rendering without external memory bottlenecks; DCARS ensures robust read timing across automotive temperature range. | Use Scenario: Local GUI storage and dynamic widget updates in factory-floor HMIs operating continuously at 60 °C ambient. IC Role / Device Role / Timing Role: Pseudo-static RAM replacement for legacy SRAM-based UI engines, reducing BOM cost and PCB area. Use Value: Self-refresh eliminates MCU refresh overhead; 300 µA standby current extends uptime during scheduled maintenance cycles. |
| Edge AI Inference Accelerators | Medical Imaging Preview Buffers |
Use Scenario: Temporary activation tensor storage during real-time neural network inference on low-power SoCs. IC Role / Device Role / Timing Role: High-speed scratchpad memory for intermediate layer outputs, accessed via burst reads/writes aligned to model stride. Use Value: Configurable 128-byte wrapped bursts match typical CNN kernel tile sizes; 166 MHz DDR clock synchronizes with accelerator's native timing domain. | Use Scenario: Buffering real-time ultrasound or endoscope preview frames before compression and transmission. IC Role / Device Role / Timing Role: Low-latency frame store interfaced directly to image sensor pipeline or ISP block. Use Value: 36 ns tACC enables sub-microsecond pixel fetch; RWDS-based write masking allows partial frame updates without full-line overwrites. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar self-refresh DRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| S70KS1281DPBHI020 | Same die, identical electrical specs, but rated for industrial (–40 °C to +85 °C) vs. extended (–40 °C to +105 °C) temperature range | Not suitable for under-hood automotive or high-ambient industrial enclosures | Select for cost-sensitive industrial designs where 105 °C operation is unnecessary |
| S27KS0641DPBHI020 | 64 Mb density, single-die, same 24-ball FBGA footprint and HyperBus interface | Half memory capacity; lower burst bandwidth (200 MBps @ 100 MHz) limits high-res video use | Select when system memory requirement is ≤8 MB and thermal budget restricts 166 MHz operation |
Compared with S70KS1281DPBHI023, the 020-grade variant trades extended temperature support for lower qualification cost, while the S27KS0641 offers pin-compatible downscaling for memory-constrained designs - both retain identical command protocol and DCARS timing behavior.
Availability
S70KS1281DPBHI023 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial HMIs, edge AI accelerators, and medical imaging preview buffers requiring stable component supply and long-term lifecycle support.
Supply support for S70KS1281DPBHI023 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor leader specializing in power management, sensing, connectivity, and memory solutions for automotive, industrial, and IoT markets.
This part belongs to the HyperRAM™ product line, designed specifically to replace parallel SRAM and LPDDR in bandwidth-constrained, low-pin-count embedded systems where simplicity, low power, and ease of routing are critical.
FAQ
What is the significance of the "DPBHI023" suffix in S70KS1281DPBHI023?
The suffix encodes package, temperature grade, and revision: "DP" = 24-ball FBGA, "BH" = 1.8 V I/O, "I" = industrial temperature range (–40 °C to +105 °C), "023" = silicon revision level per Infineon's internal versioning. This distinguishes it from automotive-grade (AEC-Q100 qualified) or commercial variants.
Does S70KS1281DPBHI023 require external refresh commands from the host processor?
No. The device contains integrated self-refresh circuitry that autonomously manages DRAM cell refresh during idle periods. The host sees it as a pseudo-static RAM - no refresh cycles, timers, or scheduling logic are needed in firmware or hardware design.
Can RWDS be used as a dedicated read strobe without relying on DCARS functionality?
Yes. RWDS functions as a standard source-synchronous read data strobe even without DCARS phase shifting. However, DCARS is enabled by default and improves timing margin at 166 MHz; disabling it requires register configuration and reduces maximum reliable frequency in high-noise environments.
Is S70KS1281DPBHI023 compatible with controllers designed for Micron's LPDDR or ISSI's IS66WV51216?
No. It uses the proprietary HyperBus™ interface - electrically and protocol-wise incompatible with LPDDR, PSRAM, or asynchronous SRAM. Controller support requires native HyperBus IP (e.g., NXP i.MX RT1170, Renesas RZ/G2L) or FPGA soft-core implementation per Cypress Application Note AN98590.
S70KS1281DPBHI023 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HYPERRAM™ KS
- Package/Case:
- 24-VBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- PSRAM
- Technology:
- PSRAM (Pseudo SRAM)
- Memory Size:
- 128Mbit
- Memory Organization:
- 16M x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- 166 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 36 ns
- Voltage - Supply:
- 1.7V ~ 1.95V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 24-FBGA (6x8)
S70KS1281DPBHI023 FAQ
1.How can I place an order for S70KS1281DPBHI023 through Aetrix?
Please submit a Request for Quotation (RFQ) for S70KS1281DPBHI023 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for S70KS1281DPBHI023 reliable?
The price and inventory of S70KS1281DPBHI023 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for S70KS1281DPBHI023 is usually 5 days.
3.What payment methods are accepted for S70KS1281DPBHI023?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for S70KS1281DPBHI023 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for S70KS1281DPBHI023?
S70KS1281DPBHI023 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your S70KS1281DPBHI023 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for S70KS1281DPBHI023?
For technical support, including S70KS1281DPBHI023 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your S70KS1281DPBHI023 requirements.
6.How does Aetrix verify that S70KS1281DPBHI023 is sourced from the original manufacturer or authorized distributors?
All S70KS1281DPBHI023 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that S70KS1281DPBHI023 meets industry standards.
7.What is the process for return or replacement of S70KS1281DPBHI023?
All S70KS1281DPBHI023 units undergo pre-shipment inspection (PSI). If there is an issue with S70KS1281DPBHI023, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The S70KS1281DPBHI023 part is unused and in its original packaging.
Return procedure for S70KS1281DPBHI023:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
S70KS1281DPBHI023 Tags
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