Infineon Technologies S70KS1281DPBHV020

Overview

S70KS1281DPBHV020 from Infineon Technologies (formerly Cypress) is a 128 Mb (16 MB) HyperRAM™ self-refresh DRAM with DDR interface, 1.8 V I/O supply, differential clock support (CK/CK#), 8-bit data bus (DQ[7:0]), and bidirectional RWDS strobe/mask signal. It delivers 333 MBps throughput at 166 MHz, operates in FBGA-24 package, and targets high-bandwidth, low-pin-count memory expansion in embedded graphics and AI edge inference accelerators.

For engineers reviewing the S70KS1281DPBHV020 datasheet, S70KS1281DPBHV020 pinout, S70KS1281DPBHV020 application, or S70KS1281DPBHV020 equivalent, key selection criteria include DDR timing compliance (tACC ≤ 36 ns at 166 MHz), DCARS phase-shifted RWDS alignment, configurable burst length (16–128 bytes), deep power-down current (20 µA at 1.8 V), and HyperBus interface compatibility with PSoC™ and XMC™ host controllers.

Technical Context

This device implements a dual-die stacked architecture integrating two 64 Mb HyperRAM cores in one FBGA-24 package, enabling 128 Mb density without increasing signal count. It uses internal self-refresh logic to eliminate external refresh commands, presenting as pseudo-static RAM to the host while retaining DRAM density advantages.

The HyperBus interface employs center-aligned DDR transfers on DQ[7:0], with RWDS serving dual roles: outputting initial latency indication during CA transfer, then acting as source-synchronous read strobe or write mask during data phases. DCARS functionality shifts RWDS edge timing relative to CK to maximize read data eye margin.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch), RoHS-compliant, moisture sensitivity level 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar self-refresh DRAM applications.

Compared with S70KL1281DPBHV020 and S27KS0641DPBHV020, S70KS1281DPBHV020 uniquely balances 128 Mb density, 1.8 V low-power operation, and 333 MBps bandwidth-making it optimal for next-generation edge AI and graphics subsystems requiring both capacity and speed within strict pin and power budgets.

Availability

S70KS1281DPBHV020 is available at Aetrix Electronics and suitable for embedded graphics frame buffers, AI edge inference accelerators, industrial HMI display controllers, and medical ultrasound image pipeline buffers requiring stable component supply and long-term lifecycle support.

Supply support for S70KS1281DPBHV020 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, sensing, connectivity, and memory solutions for automotive, industrial, and IoT markets.

This part belongs to Infineon's HyperRAM™ product line-designed specifically to replace SRAM and low-density DDR in resource-constrained embedded systems where signal count, power, and board space are critical constraints.

FAQ

Is S70KS1281DPBHV020 pin-compatible with S27KS0641DPBHV020?

Yes-both use identical 24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch) footprint and share identical pin assignments for CS#, CK/CK#, RWDS, DQ[7:0], RESET#, and power terminals. The only difference is memory density (128 Mb vs. 64 Mb), allowing drop-in replacement where capacity permits.

Does this device require external refresh circuitry?

No-S70KS1281DPBHV020 integrates autonomous self-refresh logic that executes internal row refresh cycles without host intervention. The host sees it as pseudo-static RAM; no refresh commands, timers, or scheduling are needed.

What is the purpose of the RWDS signal in read versus write operations?

In reads, RWDS acts as a source-synchronous strobe edge-aligned with DQ transitions to capture data reliably. In writes, it serves as a byte mask: HIGH prevents writing to the corresponding DQ byte, enabling partial-word updates without read-modify-write cycles.

Can DCARS mode be disabled?

No-DCARS (DDR Center-Aligned Read Strobe) is a fixed hardware feature of the HyperRAM architecture. The phase shift between RWDS and CK is internally generated and cannot be bypassed; it is essential for meeting tACC and setup/hold timing at 166 MHz.