Infineon Technologies S70KS1282GABHA020

Overview

S70KS1282GABHA020 from Infineon is a 128 Mb self-refresh DRAM (PSRAM) with HYPERBUS™ interface, operating at 1.8 V/3.0 V, supporting up to 200 MHz DDR clock rate and 400 MBps data throughput. It features 8-bit DQ bus, bidirectional RWDS strobe, configurable burst lengths (16–128 bytes), and hybrid sleep/deep power-down modes for low-power embedded systems requiring high-bandwidth external memory.

For engineers reviewing the S70KS1282GABHA020 datasheet, S70KS1282GABHA020 pinout, S70KS1282GABHA020 application, or S70KS1282GABHA020 equivalent, key selection factors include HYPERBUS™ timing compliance, RWDS phase alignment for read eye optimization, partial array refresh support, and AEC-Q100 Grade 2 automotive qualification (–40°C to +105°C).

Technical Context

This PSRAM implements a stacked-die architecture (two 64 Mb dies) with on-die self-refresh control logic, eliminating host-managed refresh cycles. It uses LV-CMOS signaling across all I/Os and supports both single-ended (CK) and optional differential (CK/CK#) clocking with 11–12 signal count depending on configuration.

The HYPERBUS™ interface transfers command/address and data over the same 8-bit DQ[7:0] bus using center-aligned CA capture and DDR data transfers. RWDS serves dual roles: as a read data strobe (phase-shifted for DCARS) and write data mask, with initial latency indication at transaction start to signal internal refresh needs.

Key Specifications

Pinout & Package

24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch), RoHS-compliant, moisture sensitivity level 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PSRAM applications.

Compared with CY15B104QN-SXIT and IS66WV12816EBLL-15BLI, S70KS1282GABHA020 uniquely delivers DRAM-scale density with SRAM-like ease-of-use, HYPERBUS™'s low-pin-count DDR efficiency, and automotive-grade thermal/power behavior - making it optimal for bandwidth-constrained, safety-aware embedded systems.

Availability

S70KS1282GABHA020 is available at Aetrix Electronics and suitable for automotive ADAS subsystems, industrial HMI platforms, medical imaging modules, and edge AI accelerators requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for S70KS1282GABHA020 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D and manufacturing infrastructure.

S70KS1282GABHA020 belongs to the HYPERRAM™ product line, designed specifically to bridge the gap between SRAM simplicity and DRAM density for high-performance, low-pin-count external memory in resource-constrained embedded and automotive systems.

FAQ

Does S70KS1282GABHA020 require external refresh circuitry?

No. It integrates self-refresh logic that autonomously manages DRAM array refresh during idle periods. The host only needs to observe initial latency indications via RWDS and limit burst duration to allow internal refresh - no external refresh controller or timing software is required.

What is the purpose of the RWDS signal in read versus write operations?

In read operations, RWDS acts as a phase-shifted data strobe (DCARS) aligned to the center of the read data eye. In write operations, it functions as a write data mask, allowing selective byte enabling. Its assertion at transaction start also signals pending refresh latency to the host.

Can both 64 Mb dies operate simultaneously in S70KS1282GABHA020?

No. The two stacked dies share the same DQ, RWDS, and clock resources. Only one die is active per transaction. While hybrid sleep allows one die to power down independently, concurrent read/write to both dies is not supported by the HYPERBUS™ protocol or physical interface.

Is DCARS functionality enabled by default, and how is it configured?

DCARS is disabled by default. It is enabled by setting bit 7 of Configuration Register 1 (CR1). Once enabled, the internal phase shifter offsets RWDS by half a clock cycle relative to CK, improving setup/hold margins for high-speed reads - configuration is retained across power cycles if VCC remains applied.