Infineon Technologies S70KS1282GABHA023

Overview

S70KS1282GABHA023 from Infineon is a 128 Mb pseudo-static RAM (PSRAM) with self-refresh DRAM architecture, HYPERBUS™ DDR interface, 1.8 V/3.0 V dual-supply support, 200 MHz max clock rate, and 24-ball FBGA package. It serves as high-bandwidth external memory for microcontrollers and SoCs in automotive instrument clusters requiring low-latency, burst-access memory without host-managed refresh.

For engineers reviewing the S70KS1282GABHA023 datasheet, S70KS1282GABHA023 pinout, S70KS1282GABHA023 application, or S70KS1282GABHA023 equivalent, key selection criteria include HYPERBUS™ timing compliance, DCARS-enabled read strobe alignment, hybrid sleep mode current (330 µA at 2.0 V), and AEC-Q100 Grade 2 (–40°C to +105°C) qualification for under-hood automotive use.

Technical Context

The device implements a stacked-die architecture with two 64 Mb DRAM dies sharing a single HYPERBUS™ interface; only one die enters hybrid sleep or deep power down at a time. Its DDR interface uses center-aligned command/address and bidirectional RWDS for latency indication and data masking.

Internal refresh logic operates autonomously during idle cycles, eliminating host refresh overhead. DCARS functionality phase-shifts RWDS by one clock edge to center it within the read data eye-critical for signal integrity at 200 MHz with 400 MBps throughput.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch), RoHS-compliant, moisture sensitivity level 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PSRAM memory expansion applications.

Compared with S27KL1282DPBHA020, S70KS1282GABHA023 provides extended thermal reliability for automotive engine compartments; versus S70KS1282GABHA020, it offers tray packaging optimized for lab validation and low-volume design-in.

Availability

S70KS1282GABHA023 is available at Aetrix Electronics and suitable for automotive instrument clusters, ADAS domain controllers, infotainment head units, and industrial HMIs requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for S70KS1282GABHA023 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q200 standards.

This part belongs to Infineon's HYPERRAM™ family-designed specifically to replace legacy SRAM and low-density DDR in embedded systems where pin count, power, and simplicity outweigh raw bandwidth needs.

FAQ

What is the purpose of the RWDS signal in S70KS1282GABHA023?

RWDS serves three critical functions: (1) it outputs an initial latency pulse at transaction start to indicate pending internal refresh, (2) during reads, it acts as a center-aligned data strobe synchronized to DQ transitions, and (3) during writes, it functions as a byte-enable mask. Its bidirectional nature eliminates the need for separate read strobe and write mask signals, reducing pin count.

Does S70KS1282GABHA023 require external refresh control from the host processor?

No. The device contains autonomous self-refresh circuitry that manages DRAM array refresh during idle cycles without host intervention. The host sees it as a static RAM-no refresh commands, timers, or scheduling are required. This simplifies firmware and eliminates refresh-induced latency spikes during real-time operation.

Can both 64 Mb dies operate simultaneously in S70KS1282GABHA023?

No. Although the device integrates two 64 Mb dies in a single package, they share the same HYPERBUS™ interface and cannot be accessed concurrently. Only one die is active per transaction, and power modes like hybrid sleep or deep power down apply to a single die at a time-requiring software coordination if die-specific power management is needed.

What is the significance of DCARS in this device?

DCARS (DDR Center-Aligned Read Strobe) shifts the RWDS edge by one clock cycle relative to CK to center it within the read data eye. This compensates for skew between clock and data paths at 200 MHz, increasing timing margin by up to 150 ps. It is enabled via Configuration Register 1 and is essential for reliable operation in high-noise automotive environments with long PCB traces.