Infineon Technologies S70KS1282GABHB020

Overview

S70KS1282GABHB020 from Infineon is a 128 Mb pseudo-static RAM (PSRAM) with self-refresh DRAM core, HYPERBUS™ DDR interface, 1.8 V/3.0 V dual-supply support, 200 MHz max clock rate, and 24-ball FBGA package. It serves as high-bandwidth, low-pin-count external memory for microcontrollers and SoCs in automotive instrument clusters and industrial HMIs where SRAM-like simplicity and DRAM density are required.

For engineers reviewing the S70KS1282GABHB020 datasheet, S70KS1282GABHB020 pinout, S70KS1282GABHB020 application, or S70KS1282GABHB020 equivalent, key selection criteria include HYPERBUS™ timing compliance, RWDS strobe alignment behavior, burst length configuration (16–128 bytes), hybrid sleep mode entry latency, and AEC-Q100 Grade 2 (–40°C to +105°C) qualification.

Technical Context

This PSRAM implements a stacked-die architecture-two 64 Mb DRAM dies sharing a single HYPERBUS™ interface-with on-die refresh control logic that eliminates host-managed refresh. All transactions begin with CS# assertion and six-byte command/address transfer over DQ[7:0], followed by configurable initial access latency (tACC ≤ 35 ns).

RWDS operates bidirectionally: output during reads as center-aligned data strobe (with optional DCARS phase shift), input during writes as byte mask; CK/CK# supports both single-ended and differential clocking modes, enabling robust signal integrity at 200 MHz DDR operation across automotive and industrial PCBs.

Key Specifications

Pinout & Package

24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch) with ball map defined per Infineon datasheet Rev. *D, Section 11.1. Package supports JEDEC-standard thermal and mechanical handling for automotive production.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PSRAM applications.

Compared with S27KL0641DPBHI020 and S70KS0642GABHB020, the S70KS1282GABHB020 uniquely delivers 128 Mb density with DCARS-enhanced timing margin and hybrid sleep-critical for automotive-grade real-time display systems where latency predictability and thermal headroom are constrained.

Availability

S70KS1282GABHB020 is available at Aetrix Electronics and suitable for automotive digital instrument clusters, industrial HMI display buffers, medical portable monitor UIs, and smart home gateway firmware overlays requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for S70KS1282GABHB020 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D and manufacturing infrastructure.

The HYPERRAM™ product line targets high-speed, low-pin-count external memory for resource-constrained MCUs and SoCs-designed specifically to replace parallel NOR/NAND and legacy SRAM in automotive, industrial, and medical displays.

FAQ

What is the function of the RWDS signal in read versus write operations?

RWDS is bidirectional: during reads, it outputs a center-aligned or DCARS-phase-shifted strobe synchronized to data valid windows on DQ[7:0]; during writes, it functions as an input byte mask controlling which DQ bits are written. Its dual role eliminates need for separate RD/WR strobes, reducing signal count and simplifying timing closure.

Does S70KS1282GABHB020 support true XIP (execute-in-place) operation?

Yes-when interfaced with a HYPERBUS™-capable MCU (e.g., NXP i.MX RT1170 or Infineon AURIX TC4xx), the device supports XIP for direct instruction fetch from its linear address space. The 35 ns tACC and deterministic initial latency enable predictable execution timing without software-managed prefetch or caching.

How does hybrid sleep mode differ from deep power down in terms of wake-up latency and use cases?

Hybrid sleep retains DRAM contents and exits in ~1 µs (no refresh penalty), making it ideal for frequent low-power transitions like display blanking. Deep power down loses contents and requires full initialization (~100 µs), suited for extended idle periods such as overnight shutdown in medical monitors-both consume <1 mA at 105°C.

Can both 64 Mb dies operate simultaneously in read/write mode?

No-the stacked-die architecture shares a single HYPERBUS™ interface and control logic; only one die is active per transaction. Die selection is implicit and managed internally; users cannot address dies independently or interleave accesses. This simplifies software but limits peak bandwidth to that of a single 64 Mb die.