Infineon Technologies S70KS1282GABHB023

Overview

S70KS1282GABHB023 from Infineon is a 128 Mb self-refresh DRAM (PSRAM) with HYPERBUS™ interface, supporting 1.8 V/3.0 V dual-supply operation, 200 MHz DDR clock, 400 MBps data throughput, and 24-ball FBGA package. It serves as high-bandwidth, low-pin-count external memory for microcontrollers and SoCs in automotive instrument clusters requiring deterministic latency and partial array refresh.

For engineers reviewing the S70KS1282GABHB023 datasheet, S70KS1282GABHB023 pinout, S70KS1282GABHB023 application, or S70KS1282GABHB023 equivalent, key selection criteria include HYPERBUS™ timing compliance, RWDS strobe phase alignment, hybrid sleep mode entry timing, and AEC-Q100 Grade 2 (–40°C to +105°C) qualification for engine control units.

Technical Context

The device implements a stacked-die architecture with two 64 Mb DRAM dies sharing a single HYPERBUS™ interface; only one die enters hybrid sleep or deep power down at a time. Its memory control logic autonomously manages self-refresh without host intervention during idle cycles.

HYPERBUS™ transactions use center-aligned command/address transfers over DQ[7:0], followed by initial access latency (tACC = 35 ns), then DDR data transfers synchronized to CK/CK# edges. RWDS functions as bidirectional strobe-output during reads (including DCARS phase-shifted variant), input during writes as mask signal.

Key Specifications

Pinout & Package

24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch), RoHS-compliant, moisture sensitivity level 3. Package footprint matches JEDEC MO-270CA standard.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PSRAM/HYPERBUS™ memory applications.

Compared with S70KS1282GABHB023, the 64 Mb alternatives reduce memory capacity and eliminate stacked-die refresh coordination, trading density for simpler timing validation - critical for safety-critical ADAS subsystems where deterministic latency outweighs capacity needs.

Availability

S70KS1282GABHB023 is available at Aetrix Electronics and suitable for automotive instrument clusters, ADAS domain controllers, industrial HMIs, and EV battery management units requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for S70KS1282GABHB023 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q200.

S70KS1282 belongs to Infineon's HYPERRAM™ product line, designed specifically to replace legacy SRAM and NOR flash in bandwidth-constrained embedded systems needing high-density, low-pin-count external memory with deterministic timing.

FAQ

What is the function of the RWDS signal in read versus write operations?

RWDS operates bidirectionally: during reads, it outputs a strobe aligned to data edges (optionally phase-shifted via DCARS); during writes, it serves as an input byte mask controlling which DQ[7:0] bits are written. Its dual role eliminates need for separate RD/WR strobes, reducing signal count while maintaining timing precision at 200 MHz DDR rates.

How does hybrid sleep mode differ from deep power down in terms of wake-up latency and power consumption?

Hybrid sleep draws 750 µA at 105°C and resumes operation in <500 ns after CS# assertion; deep power down consumes only 330 µA but requires 100 µs wake-up time and full register reinitialization. Hybrid sleep suits frequent low-power transitions (e.g., display backlight dimming), while deep power down targets extended idle periods like vehicle ignition-off states.

Can both 64 Mb dies in the S70KS1282 be independently placed into deep power down?

No. The stacked-die architecture restricts deep power down to one die at a time; the other remains powered to maintain interface logic and control register state. This constraint prevents full 128 Mb isolation but ensures continuous HYPERBUS™ responsiveness - essential for real-time automotive systems where command latency must remain bounded.

What HYPERBUS™ command sequence initiates a linear burst write of 128 bytes?

A linear burst write begins with CS# assertion, six-byte command/address transfer (0x000000000000 for sequential access), 64-cycle initial latency, then 128 consecutive DQ[7:0] writes sampled on both CK edges. RWDS must be driven low during write to enable all eight data bits; burst termination occurs on CS# deassertion or explicit stop command.