Infineon Technologies S70KS1282GABHB030

Overview

S70KS1282GABHB030 from Infineon is a 128 Mb pseudo-static RAM (PSRAM) with self-refresh DRAM core, HYPERBUS™ DDR interface, 1.8 V/3.0 V dual-supply support, 200 MHz max clock rate, and 24-ball FBGA package. It serves as high-bandwidth external memory for microcontrollers and SoCs in automotive instrument clusters, industrial HMIs, and AI edge inference accelerators requiring low-latency, burst-access memory without host-managed refresh.

For engineers reviewing the S70KS1282GABHB030 datasheet, S70KS1282GABHB030 pinout, S70KS1282GABHB030 application, or S70KS1282GABHB030 equivalent, key selection criteria include HYPERBUS™ timing compliance, RWDS strobe phase alignment, hybrid sleep mode entry latency, DCARS support, and AEC-Q100 Grade 2 (–40°C to +105°C) qualification.

Technical Context

The device implements a stacked-die architecture with two 64 Mb DRAM dies sharing a single HYPERBUS™ interface; only one die enters hybrid sleep or deep power down at a time. Its internal refresh controller eliminates host refresh overhead while enforcing initial access latency during read/write bursts to accommodate array refresh cycles.

HYPERBUS™ operation uses center-aligned command/address transfers on DQ[7:0], with bidirectional RWDS serving as read data strobe (phase-shifted for DCARS), write mask, and refresh latency indicator. The interface supports linear and wrapped burst lengths (16–128 bytes) and configurable output drive strength for signal integrity across PCB trace lengths.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch), RoHS-compliant, moisture sensitivity level 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PSRAM/HYPERBUS™ memory applications.

Compared with S27KL0641DPBHB020 and S70KS0642GABHB030, the S70KS1282GABHB030 uniquely delivers 128 Mb in the same footprint with DCARS-critical for high-speed, long-trace automotive layouts-while maintaining full backward compatibility with existing HYPERBUS™ controller firmware.

Availability

S70KS1282GABHB030 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial HMIs, and AI edge inference accelerators requiring stable component supply with AEC-Q100 qualification and long-term lifecycle support.

Supply support for S70KS1282GABHB030 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D and manufacturing infrastructure.

The HYPERRAM™ product line targets high-performance, low-pin-count external memory for resource-constrained embedded systems-designed to replace parallel NOR/NAND and reduce MCU pin count while delivering DRAM-level bandwidth.

FAQ

What is the function of the RWDS signal in S70KS1282GABHB030?

RWDS is a bidirectional signal used as a read data strobe (with optional DCARS phase shift), write data mask, and refresh latency indicator. During reads, it outputs aligned to data edges; during writes, it inputs byte-enable bits. Its assertion at transaction start signals whether internal refresh delays initial access.

Does S70KS1282GABHB030 require external refresh commands from the host?

No. The device contains autonomous self-refresh logic that manages DRAM array refresh without host intervention. The host sees a pseudo-static interface-no refresh cycles, timers, or commands are needed-though it must observe initial access latency when RWDS indicates pending refresh.

Can both 64 Mb dies operate simultaneously in S70KS1282GABHB030?

No. The two 64 Mb dies share a single HYPERBUS™ interface and cannot be accessed concurrently. Only one die is active per transaction; hybrid sleep and deep power down modes also apply to one die at a time, limiting concurrent low-power state entry.

What is the significance of DCARS support in this device?

DCARS (DDR Center-Aligned Read Strobe) shifts RWDS phase by half a clock cycle to position its transition edge inside the read data eye. This increases setup/hold margin for high-speed, long-trace layouts-especially critical in automotive PCBs where signal integrity must be maintained across temperature and voltage extremes.