Infineon Technologies S70KS1282GABHB033

Overview

S70KS1282GABHB033 from Infineon is a 128 Mb pseudo-static RAM (PSRAM) with self-refresh DRAM core, HYPERBUS™ DDR interface, 1.8 V/3.0 V dual-supply support, 200 MHz max clock rate, and 24-ball FBGA package. It serves as high-bandwidth, low-pin-count external memory for microcontrollers and SoCs in automotive instrument clusters and industrial HMI displays requiring deterministic latency and low-power standby.

For engineers reviewing the S70KS1282GABHB033 datasheet, S70KS1282GABHB033 pinout, S70KS1282GABHB033 application, or S70KS1282GABHB033 equivalent, key selection criteria include HYPERBUS™ timing compliance, RWDS strobe phase alignment, hybrid sleep mode entry latency, and AEC-Q100 Grade 2 (–40°C to +105°C) qualification for under-hood automotive use.

Technical Context

The device implements a stacked-die architecture with two 64 Mb DRAM dies sharing a single HYPERBUS™ interface controller; only one die enters hybrid sleep or deep power down at a time. Its DDR protocol transfers 2 bytes per clock cycle on DQ[7:0], with RWDS acting as bidirectional strobe-output during reads (center-aligned via DCARS option), input during writes (mask function).

Refresh is fully autonomous: internal logic schedules array refreshes between transactions without host intervention. Initial access latency varies based on refresh status, and burst lengths are configurable (16–128 bytes) with linear or wrapped options-though linear bursts across die boundaries are prohibited.

Key Specifications

Pinout & Package

24-ball FBGA package with 5 × 5 array footprint, 0.8 mm ball pitch, and JEDEC MO-270AC compliant mechanical outline.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PSRAM applications.

Compared with CY15B104QN-SXIT and IS66WV12816EBLL-15BLI, S70KS1282GABHB033 uniquely balances high density, DDR bandwidth, ultra-low standby power, and automotive-grade reliability in a minimal 24-ball footprint-making it optimal for next-gen embedded displays and ADAS subsystems where space, heat, and deterministic timing are constrained.

Availability

S70KS1282GABHB033 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial HMI displays, ADAS camera preprocessing buffers, and smart gateway message queues requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for S70KS1282GABHB033 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D and manufacturing infrastructure.

This part belongs to the HYPERRAM™ product line, designed specifically to replace parallel NOR/NAND and low-density SDRAM in resource-constrained embedded systems requiring high-speed, low-pin-count, self-managed memory with automotive qualification.

FAQ

What is the purpose of the RWDS signal in S70KS1282GABHB033?

RWDS is a bidirectional strobe: during reads, it outputs a center-aligned pulse indicating valid data windows (optionally phase-shifted via DCARS); during writes, it functions as a byte mask for DQ[7:0]. Its timing directly governs data capture accuracy and must be routed with matched length to CK/CK# to meet setup/hold requirements.

Does S70KS1282GABHB033 require external refresh circuitry?

No. The device contains autonomous refresh logic that schedules row refreshes between host transactions. The host only needs to observe initial access latency hints and limit burst durations per datasheet guidelines-no refresh commands or timing control are required.

Can both 64 Mb dies operate simultaneously in S70KS1282GABHB033?

No. Although the device integrates two 64 Mb dies in one package, they share the same HYPERBUS™ interface and control logic. Only one die is active per transaction; the other remains in standby. Hybrid sleep and deep power down modes also apply to one die at a time.

What is the significance of the "B" suffix in S70KS1282GABHB033?

The "B" denotes AEC-Q100 Grade 2 qualification (–40°C to +105°C), confirming full automotive reliability testing including HTOL, TC, and ESD. The "H" indicates HYPERBUS™ interface support, "033" specifies the 24-ball FBGA package variant, and "GAB" encodes 1.8 V VCC/VCCQ operation with industrial-plus temperature range.