Infineon Technologies S70KS1282GABHI020

Overview

S70KS1282GABHI020 from Infineon is a 128 Mb pseudo-static RAM (PSRAM) with self-refresh DRAM core, HYPERBUS™ DDR interface, 1.8 V/3.0 V dual-supply support, 200 MHz max clock rate, and 24-ball FBGA package. It serves as high-bandwidth, low-pin-count external memory for microcontrollers and SoCs in automotive instrument clusters, industrial HMIs, and AI edge inference accelerators requiring deterministic latency and low-power standby.

For engineers reviewing the S70KS1282GABHI020 datasheet, S70KS1282GABHI020 pinout, S70KS1282GABHI020 application, or S70KS1282GABHI020 equivalent, key selection criteria include HYPERBUS™ timing compliance, RWDS strobe phase alignment, hybrid sleep mode entry timing, and 64-byte burst configuration for cache-line-aligned access in real-time systems.

Technical Context

This PSRAM integrates two 64 Mb stacked-die DRAM arrays sharing a single HYPERBUS™ controller, with internal refresh logic eliminating host-managed refresh cycles. It supports linear and wrapped burst lengths (16–128 bytes), configurable output drive strength, and DDR data transfers on DQ[7:0] synchronized to CK/CK#.

The device implements bidirectional RWDS for read-data strobe and write-data mask functions, plus optional DCARS for center-aligned read strobe offset by one clock phase-critical for timing margin optimization in high-speed PCB layouts. Power modes include hybrid sleep (330 µA at 2.0 V) and deep power down (360 µA at 3.6 V).

Key Specifications

Pinout & Package

24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch), RoHS-compliant, moisture sensitivity level 3. Package supports automated optical inspection and fine-pitch routing for high-density PCBs.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PSRAM/HYPERBUS™ memory applications.

Compared with S27KL1282DPBHI020 and S70KS1282GABHI022, the S70KS1282GABHI020 uniquely delivers DCARS timing flexibility and extended temperature operation-enabling robust timing margin in thermally aggressive, high-speed embedded systems without redesigning layout or firmware.

Availability

S70KS1282GABHI020 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial HMIs, AI edge inference accelerators, and medical imaging front-ends requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for S70KS1282GABHI020 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D and manufacturing infrastructure.

The HYPERRAM™ product line targets high-performance, low-pin-count external memory for resource-constrained MCUs and SoCs-designed specifically to replace parallel NOR/NAND and reduce system-level complexity in real-time embedded applications.

FAQ

What is the minimum initial access latency for a read transaction?

The minimum initial access latency is 6 clock cycles at 200 MHz, measured from CS# assertion to first valid RWDS edge. This latency accommodates internal refresh arbitration and command decode. Latency increases if a refresh operation is pending, and the host must monitor RWDS behavior to detect such conditions before issuing subsequent commands.

Can S70KS1282GABHI020 operate with only single-ended clock (CK) without CK#?

Yes, it supports single-ended CK operation in standard mode. CK# is required only when enabling DCARS functionality or using differential clocking for improved noise immunity. The device automatically detects clock configuration during power-up initialization based on CK#/VSS connection status per datasheet Section 9.6.

How does hybrid sleep mode affect the two internal 64 Mb dice?

Hybrid sleep mode applies to only one die at a time; the other remains powered and retains data. This enables fast wake-up from one die while preserving context in the second, supporting dual-buffer architectures. Entry requires explicit register write to CONFIG0[15], and both dice must be in same power state before transitioning to deep power down.

Is RWDS used as an input during write transactions for all burst types?

Yes, RWDS functions as a byte-enable mask input during all write transactions-including linear and wrapped bursts. Each rising edge of RWDS gates one byte of DQ[7:0] data into the array. For 64-byte bursts, 64 RWDS transitions are required, making precise timing alignment critical for write integrity at 200 MHz DDR.