Infineon Technologies S70KS1282GABHI023

Overview

S70KS1282GABHI023 from Infineon is a 128 Mb pseudo-static RAM (PSRAM) with self-refresh DRAM core, HYPERBUS™ DDR interface, 1.8 V/3.0 V dual-supply support, 200 MHz max clock rate, and 24-ball FBGA package. It serves as high-bandwidth, low-pin-count external memory for microcontrollers and SoCs in automotive instrument clusters and industrial HMI displays requiring deterministic latency and low-power standby.

For engineers reviewing the S70KS1282GABHI023 datasheet, S70KS1282GABHI023 pinout, S70KS1282GABHI023 application, or S70KS1282GABHI023 equivalent, key selection criteria include HYPERBUS™ timing compliance, RWDS strobe alignment behavior, hybrid sleep mode entry/exit timing, and DCARS phase-shifted read strobe configuration for 200 MHz operation.

Technical Context

This PSRAM implements a stacked-die architecture with two 64 Mb DRAM dies sharing a single HYPERBUS™ interface controller. Refresh logic operates autonomously during idle cycles, eliminating host refresh management while enforcing burst-length limits (≤128 bytes) to guarantee internal refresh windows.

The interface supports both single-ended (11-signal) and optional differential clock (12-signal) modes, with RWDS functioning bidirectionally: as a read data strobe aligned to CK edge transitions, and as a write mask input. DCARS mode shifts RWDS phase by one-half clock cycle to center it within the read data eye at 200 MHz.

Key Specifications

Pinout & Package

24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch), RoHS-compliant, moisture sensitivity level 3. Package supports automated optical inspection and fine-pitch PCB assembly.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PSRAM applications.

Compared with S27KL0641DPBHI020, S70KS1282GABHI023 delivers double density and DCARS-enabled 200 MHz reliability; versus S70KS0642GABHI023, it provides scalable memory headroom for future UI feature upgrades without board re-spin.

Availability

S70KS1282GABHI023 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial HMI displays, medical patient monitors, and smart home gateways requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for S70KS1282GABHI023 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global manufacturing and qualification infrastructure.

S70KS1282 belongs to the HYPERRAM™ product line, engineered specifically for MCU/SoC systems needing high-speed, low-pin-count external memory with SRAM-like ease-of-use and automotive-grade reliability.

FAQ

What is the function of the RWDS pin in read versus write operations?

RWDS acts as a read data strobe output during reads-its rising edge aligns with valid DQ data-and as a write data mask input during writes, where high states suppress corresponding byte writes. Its timing is programmable via Configuration Register 1 to support DCARS phase shift for optimal 200 MHz read margins.

How does hybrid sleep mode differ from deep power down in terms of wake-up latency and data retention?

Hybrid sleep retains full array data with ~50 mA active current and sub-1 µs wake-up latency, while deep power down reduces current to 330 µA but requires ~100 µs initialization before next access. Hybrid sleep is used for frequent low-latency wake events; deep power down suits extended idle periods.

Can both 64 Mb dies operate simultaneously in linear burst mode across the die boundary?

No. Linear burst across die boundaries is explicitly unsupported. The device allows only one die to be active at a time; linear bursts must remain within a single 64 Mb die. Cross-die access requires separate transactions with CS# toggling and inter-die latency penalties.

What are the absolute maximum ratings for VCC and VCCQ, and how do they relate to 1.8 V/3.0 V operation?

Absolute maximum VCC/VCCQ is 3.6 V per Infineon datasheet section 9.1. The device operates at nominal 1.8 V or 3.0 V supplies-selected by ordering part number-not both simultaneously. Exceeding 3.6 V risks permanent damage; operation below 1.71 V (1.8 V ±5%) or 2.85 V (3.0 V ±5%) violates AC timing specifications.