My Inquiry
My Account
Infineon Technologies S70KS1282GABHM020
- Part No.:
- S70KS1282GABHM020
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 24-VBGA
- Datasheet:
-
S70KS1282GABHM020.pdf
- Description:
- IC PSRAM 128MBIT HYPERBUS 24FBGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,704
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
S70KS1282GABHM020 from Infineon is a 128-Mbit automotive-grade HyperRAM (self-refresh DRAM) with HyperBus interface, operating at 1.8 V or 3.0 V, supporting up to 200 MHz DDR clocking, 400 MBps data throughput, and AEC-Q100 Grade 1 (–40 °C to +125 °C). It serves as high-bandwidth, low-pin-count external memory for ADAS domain controllers and infotainment SoCs requiring pseudo-static behavior without host-managed refresh.
For engineers reviewing the S70KS1282GABHM020 datasheet, S70KS1282GABHM020 pinout, S70KS1282GABHM020 application, or S70KS1282GABHM020 equivalent, key selection criteria include HyperBus timing compliance, dual-die burst boundary handling, RWDS-driven read/write strobe alignment, and Hybrid Sleep/Deep Power Down mode sequencing in automotive thermal environments.
Technical Context
The device implements a dual-die 64 Mb × 2 stacked architecture with independent power-down control per die, enabling selective refresh management. Its HyperBus interface uses 11–12 signal lines (including optional CK#/CK differential pair), 8-bit DQ bus, and bidirectional RWDS for latency signaling, read strobing, and write masking - eliminating need for separate address/control buses.
It supports configurable linear/wrapped burst lengths (16–128 bytes), DDR center-aligned read/write transfers, and partial array refresh (1/8, 1/4, 1/2) alongside full-array refresh. DCARS mode shifts RWDS phase relative to CK to optimize read-data eye positioning during high-speed operation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 128 Mbit (dual 64 Mb dice), usable as single contiguous space with burst wrapping across die boundaries disabled |
| Interface Standard | HyperBus v2.0: 8-bit DQ, single/differential CK/CK#, CS#, RESET#, RWDS - reduces PCB routing vs parallel SRAM/DDR |
| Max Clock Rate | 200 MHz DDR (400 MT/s), enabling 400 MBps peak throughput with minimal I/O count |
| Operating Temp | AEC-Q100 Grade 1: –40 °C to +125 °C ambient, qualified for engine bay and central display ECU mounting |
| Power Modes | Hybrid Sleep (partial array active, fast wake), Deep Power Down (full array retention, <10 µA), and Interface Standby |
| Access Latency | tACC ≤ 35 ns at 200 MHz; initial latency signaled via RWDS output before read data valid window |
| Burst Config | Programmable wrapped/linear bursts: 16/32/64/128 bytes; hybrid burst (wrapped + linear) supported on 64 Mb die only |
Pinout & Package
24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch), RoHS-compliant, moisture sensitivity level 3. Package supports automated optical inspection and fine-pitch automotive PCB assembly.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CK / CK# | Differential clock input (optional) | Enables source-synchronous DDR timing; CK# required for DCARS mode and jitter-critical applications |
| CS# | Chip select (active-low) | Asserted to initiate HyperBus command/address transfer; deassertion terminates transaction and triggers internal refresh if needed |
| RWDS | Bidirectional read/write data strobe | Outputs initial latency indicator pre-read; acts as edge-aligned read strobe or write mask during data phase |
| DQ[7:0] | 8-bit bidirectional data bus | Carries command/address (6 bytes), read data, and write data; LV-CMOS compatible at 1.8 V or 3.0 V VCCQ |
| RESET# | Hardware reset input (active-low) | Forces device into known state, clears internal registers, and resets refresh counter - required after power-up or brownout |
Key Features
| Feature | Design Value |
|---|---|
| Self-Refresh DRAM Architecture | Eliminates host refresh overhead; appears as PSRAM to controller while retaining DRAM density/cost advantage |
| HyperBus Low-Signal-Count Interface | 11–12 pins replace 30+ for equivalent parallel SRAM, reducing PCB layer count and EMI in safety-critical zones |
| Configurable Burst & DCARS | DCARS phase shift moves RWDS edge into center of read data eye, improving setup/hold margin at 200 MHz |
| Automotive Power Management | Hybrid Sleep allows one die active for real-time tasks while other enters Deep Power Down - critical for ASIL-B system partitioning |
| Dual-Die Stacked Construction | Enables 128 Mb in same footprint as 64 Mb; die-select not exposed - simplifies firmware but restricts per-die refresh control |
Applications
| ADAS Domain Controller Memory | Infotainment Head Unit Frame Buffer |
|---|---|
Use Scenario: Real-time sensor fusion processing in Level 2+ ADAS ECUs requiring low-latency access to radar/vision buffers. IC Role / Device Role / Timing Role: External high-bandwidth memory mapped to SoC AXI bus via HyperBus-to-AXI bridge; provides 400 MBps sustained read for multi-camera frame stitching. Use Value: Enables deterministic 35 ns tACC and RWDS-synchronized reads without CPU intervention, meeting ISO 26262 timing constraints for ASIL-B software partitions. | Use Scenario: High-resolution GUI rendering in automotive head units with 1080p displays and OpenGL ES acceleration. IC Role / Device Role / Timing Role: Frame buffer memory interfaced to GPU subsystem; burst-wrapped 128-byte reads supply pixel tiles during scan-out with minimal bus arbitration. Use Value: Dual-die architecture delivers 128 Mb capacity in 5×5 mm FBGA, fitting tight layout constraints while maintaining >95% bus utilization under continuous video playback. |
| Telematics Control Unit Log Storage | Central Gateway ECU Boot Image Cache |
Use Scenario: Persistent event logging (crash data, CAN trace) in telematics modules with limited board space and thermal budget. IC Role / Device Role / Timing Role: Non-volatile-adjacent cache for flash wear-leveling metadata; accessed via short linear bursts during CAN message buffering. Use Value: Hybrid Sleep mode reduces active current to 60 mA (1.8 V) during idle logging intervals, extending module runtime during battery-save states. | Use Scenario: Fast boot image decompression and execution in zonal gateway ECUs with multi-core MCUs. IC Role / Device Role / Timing Role: XIP-capable memory holding compressed firmware images; linear 64-byte bursts feed instruction fetch pipeline during cold start. Use Value: Deep Power Down mode (<10 µA) maintains boot image integrity during vehicle sleep, enabling sub-100 ms wake-to-execution from ignition-on. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar self-refresh DRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY14B108L-BA25XI | 8-Mbit nvSRAM with integrated EEPROM backup; 25 ns tACC; parallel x16 interface (36 pins) | Non-volatile retention without external capacitor; no HyperBus or DDR timing support | Select when data persistence across power loss is mandatory and pin count is not constrained. |
| IS43TR16128B-125KBL | 2-Gbit LPDDR3; 125 MHz clock; 16-bit bus; 1.2 V core; requires PHY and controller support | Higher bandwidth (1600 MBps) but needs full DDR3 protocol stack and termination design | Select for high-throughput applications where SoC includes LPDDR3 controller and board area allows 96-ball BGA. |
Compared with CY14B108L-BA25XI and IS43TR16128B-125KBL, S70KS1282GABHM020 uniquely balances automotive temperature range, HyperBus simplicity, and 128 Mb density - avoiding both nvSRAM cost premiums and LPDDR3 design complexity.
Availability
S70KS1282GABHM020 is available at Aetrix Electronics and suitable for ADAS domain controllers, infotainment head units, telematics log storage, and central gateway ECUs requiring stable component supply across extended automotive lifecycles.
Supply support for S70KS1282GABHM020 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and memory solutions, with global R&D and manufacturing facilities.
This part belongs to Infineon's HyperRAM product line, designed specifically for automotive and industrial systems needing high-density, low-pin-count external memory with guaranteed AEC-Q100 qualification and seamless integration into SoC-based architectures.
FAQ
What is the difference between S70KS1282GABHM020 and S70KL1282GABHM020?
The S70KS1282GABHM020 supports optional differential clock (CK/CK#) and DDR Center-Aligned Read Strobe (DCARS), while the S70KL1282GABHM020 lacks DCARS and only supports single-ended CK. Both share identical density, package, temperature grade, and HyperBus functionality - DCARS enables improved read timing margin at 200 MHz in noise-sensitive automotive environments.
Does this device require an external refresh controller?
No. The S70KS1282GABHM020 integrates self-refresh logic that autonomously manages DRAM array refresh during idle periods. The host processor only issues standard HyperBus read/write commands; refresh cycles occur transparently without interrupting transactions or requiring firmware scheduling.
Can RWDS be used as a dedicated read data strobe without write masking?
Yes. In standard read operations, RWDS functions solely as a source-synchronous read data strobe, edge-aligned with DQ transitions. Write masking is only active during write transactions when RWDS is driven high by the host to suppress individual byte writes - it does not affect read-mode behavior.
Is the 24-ball FBGA footprint compatible with standard reflow profiles for automotive PCBs?
Yes. The 5 mm × 5 mm, 0.8 mm pitch FBGA uses SnAgCu (SAC305) solder paste and complies with IPC/JEDEC J-STD-020D moisture sensitivity level 3. It supports peak reflow temperatures up to 260 °C and is qualified for automotive underhood thermal cycling (–40 °C to +125 °C).
S70KS1282GABHM020 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HYPERRAM™ KL
- Package/Case:
- 24-VBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- PSRAM
- Technology:
- PSRAM (Pseudo SRAM)
- Memory Size:
- 128Mbit
- Memory Organization:
- 16M x 8
- Memory Interface:
- HyperBus
- Clock Frequency:
- 200 MHz
- Write Cycle Time - Word, Page:
- 35ns
- Access Time:
- 35 ns
- Voltage - Supply:
- 1.7V ~ 2V
- Operating Temperature:
- -40°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 24-FBGA (6x8)
S70KS1282GABHM020 FAQ
1.How can I place an order for S70KS1282GABHM020 through Aetrix?
Please submit a Request for Quotation (RFQ) for S70KS1282GABHM020 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for S70KS1282GABHM020 reliable?
The price and inventory of S70KS1282GABHM020 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for S70KS1282GABHM020 is usually 5 days.
3.What payment methods are accepted for S70KS1282GABHM020?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for S70KS1282GABHM020 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for S70KS1282GABHM020?
S70KS1282GABHM020 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your S70KS1282GABHM020 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for S70KS1282GABHM020?
For technical support, including S70KS1282GABHM020 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your S70KS1282GABHM020 requirements.
6.How does Aetrix verify that S70KS1282GABHM020 is sourced from the original manufacturer or authorized distributors?
All S70KS1282GABHM020 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that S70KS1282GABHM020 meets industry standards.
7.What is the process for return or replacement of S70KS1282GABHM020?
All S70KS1282GABHM020 units undergo pre-shipment inspection (PSI). If there is an issue with S70KS1282GABHM020, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The S70KS1282GABHM020 part is unused and in its original packaging.
Return procedure for S70KS1282GABHM020:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
S70KS1282GABHM020 Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…
Machine vision system guide covering components, inspection workflow, camera and lens selection, FOV, pixel resolution, motion blur, strobe lighting, bandwidth, 2D/3D vision, integration, troubleshooti…
Electronic devices and circuits guide covering passive components, semiconductors, analog and digital circuits, circuit theory, practical calculations, troubleshooting, datasheet selection, and learnin…
