Infineon Technologies S70KS1282GABHM023

Overview

S70KS1282GABHM023 from Infineon is a 128-Mbit Automotive Grade 1 (–40 °C to +125 °C) HyperRAM self-refresh DRAM with HyperBus DDR interface, 200 MHz max clock rate, 8-bit DQ bus, and 24-ball FBGA package. It delivers up to 400 MBps throughput, supports linear/wrapped burst lengths (16–128 bytes), and integrates on-die refresh control for pseudo-static operation in automotive infotainment and ADAS host processors.

For engineers reviewing the S70KS1282GABHM023 datasheet, S70KS1282GABHM023 pinout, S70KS1282GABHM023 application, or S70KS1282GABHM023 equivalent, key selection criteria include HyperBus timing compliance, dual-die refresh mode constraints, RWDS bidirectional strobe behavior, DCARS phase-shifted read strobe support, and AEC-Q100 Grade 1 thermal/power validation for safety-critical memory subsystems.

Technical Context

The device implements a dual-die stacked architecture (two 64-Mb dies), where only one die may enter Hybrid Sleep or Deep Power Down at a time. Its HyperBus interface uses center-aligned command/address transfers and edge-aligned read data strobes via RWDS, with configurable initial latency counts dependent on internal refresh state.

It supports both single-ended (CK) and optional differential (CK/CK#) clocking, 1.8 V or 3.0 V VCC/VCCQ operation, and DDR data transfers on DQ[7:0] - achieving 200 MHz clock rate with 35 ns tACC and up to 72 mA active current at 3.0 V during linear burst operations.

Key Specifications

Pinout & Package

24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch), RoHS-compliant, with ball map matching JEDEC MO-270AC standard. Package supports automated optical inspection and high-reliability automotive reflow profiles.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar HyperBus DRAM applications.

Compared with S70KL1282GABHM023 and S70KS0642GABHM023, the S70KS1282GABHM023 uniquely combines dual-die capacity, DCARS timing flexibility, and 3.0 V interface support - making it optimal for thermally demanding, high-throughput automotive systems requiring both bandwidth and robust signal integrity.

Availability

S70KS1282GABHM023 is available at Aetrix Electronics and suitable for automotive infotainment head units, ADAS camera processing modules, and digital instrument clusters requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for S70KS1282GABHM023 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D and manufacturing infrastructure.

This part belongs to the HyperRAM product line - designed specifically to replace PSRAM and low-density LPDDR in automotive and industrial systems where DDR bandwidth, AEC-Q100 qualification, and simplified memory controller integration are critical.

FAQ

What is the maximum supported burst length for S70KS1282GABHM023?

The device supports wrapped and linear burst lengths of 16, 32, 64, or 128 bytes - corresponding to 8, 16, 32, or 64 clock cycles respectively. Linear bursts cannot cross the boundary between the two internal 64-Mb dies, limiting maximum contiguous linear access to 64 bytes per die.

Does S70KS1282GABHM023 require external refresh circuitry?

No. The device contains integrated self-refresh logic that automatically manages DRAM cell refresh during idle periods. Host systems interact with it as a pseudo-static RAM - no refresh commands, timers, or scheduling are needed from the memory controller.

How does RWDS function during write transactions?

During writes, RWDS operates as an input to the device and functions as a per-byte write mask: HIGH disables writing to the corresponding DQ[7:0] byte, LOW enables it. This allows precise byte-level merging of non-word-aligned data without requiring multiple short bursts.

Can both dies enter Deep Power Down simultaneously?

No. Due to its dual-die stacked construction, only one 64-Mb die can be placed into Deep Power Down or Hybrid Sleep mode at a time. The other die remains accessible, enabling partial memory retention and selective power gating in multi-threaded automotive workloads.