Infineon Technologies S70KS1282GABHV020

Overview

S70KS1282GABHV020 from Infineon is a 128 Mb self-refresh DRAM (PSRAM) with HYPERBUS™ interface, operating at 1.8 V/3.0 V VCC/VCCQ, supporting DDR transfers up to 200 MHz and 400 MBps throughput. It integrates two 64 Mb stacked dice, features configurable burst lengths (16–128 bytes), hybrid sleep and deep power down modes, and targets high-bandwidth, low-pin-count memory expansion in embedded controllers and automotive infotainment systems.

For engineers reviewing the S70KS1282GABHV020 datasheet, S70KS1282GABHV020 pinout, S70KS1282GABHV020 application, or S70KS1282GABHV020 equivalent, key selection criteria include HYPERBUS™ timing compliance (tACC ≤ 35 ns), RWDS strobe behavior (center-aligned or DCARS-enabled), dual-voltage I/O support, partial array refresh capability, and FBGA-24 thermal/power constraints for industrial (–40°C to +85°C) and automotive (AEC-Q100 Grade 3) deployments.

Technical Context

The S70KS1282GABHV020 implements a DDR HYPERBUS™ interface with 11–12 signal lines (including optional CK#/CK differential clock), using LV-CMOS signaling and center-aligned command/address capture. Its internal architecture splits the 128 Mb capacity across two independent 64 Mb dice, each with dedicated refresh logic and power control-only one die may enter hybrid sleep or deep power down at a time.

Read transactions use bidirectional RWDS as read data strobe (offset by phase-shifted clock in DCARS mode) or write data mask; initial access latency indicates pending refresh. Burst configurations support linear or wrapped patterns (8–64 clocks), with hybrid burst (wrapped + linear) enabled on 64 Mb boundaries only-linear bursts crossing die boundaries are prohibited.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch), RoHS-compliant, moisture sensitivity level 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PSRAM memory expansion applications.

Compared with CY15B104QN-PSOC and IS66WV12816EBLL-15BLI, the S70KS1282GABHV020 delivers 26× higher bandwidth than FRAM and 5.3× lower interface pin count than parallel SRAM-enabling compact, thermally efficient memory subsystems where self-refresh and DDR throughput are critical.

Availability

S70KS1282GABHV020 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial HMIs, ADAS camera preprocessing units, and edge AI inference accelerators requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for S70KS1282GABHV020 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D and manufacturing infrastructure.

The HYPERRAM™ product line targets high-performance, low-pin-count memory expansion for resource-constrained embedded processors-designed specifically to replace parallel SRAM and reduce FPGA/microcontroller memory interface complexity in automotive and industrial applications.

FAQ

What voltage supplies does the S70KS1282GABHV020 require?

The device requires two independent supplies: VCC (1.7–1.95 V or 2.7–3.6 V) for the DRAM array, and VCCQ (same range) for I/O buffers. Both must be within the same nominal range (1.8 V or 3.0 V) per ordering variant-mixed-voltage operation is not supported. Decoupling capacitors must be placed per Infineon's layout guidelines to maintain signal integrity at 200 MHz.

How does RWDS function during read versus write operations?

During reads, RWDS is an output that transitions mid-cycle to indicate valid data window; in DCARS mode, it is phase-shifted for optimal sampling. During writes, RWDS is an input used as byte mask-each rising edge masks one DQ byte. RWDS must be driven by the host only during write commands and left floating or pulled high during reads unless DCARS is disabled.

Can both 64 Mb dice operate simultaneously in active mode?

No. While the device presents a unified 128 Mb address space, only one die can be active at a time. Reads/writes are internally routed to either Die 0 or Die 1 based on address mapping. Simultaneous access to both dice is prohibited; interleaving requires host-level arbitration and introduces additional latency due to die switching overhead.

Is the S70KS1282GABHV020 compatible with existing HYPERBUS™ controllers designed for S70KL series?

Yes-pin-compatible and electrically identical to S70KL1282 variants. The 'S' suffix denotes enhanced DCARS support and minor register-level improvements, but command set, timing parameters (tACC, tHZ), and power mode entry sequences remain fully backward-compatible. No firmware or hardware changes are needed for migration from KL to KS versions.