Infineon Technologies S70KS1282GABHV023

Overview

S70KS1282GABHV023 from Infineon is a 128 Mb pseudo-static RAM (PSRAM) with self-refresh DRAM core, HYPERBUS™ DDR interface, 1.8 V/3.0 V dual-supply support, 200 MHz max clock rate, and 400 MBps data throughput. It serves as high-bandwidth, low-pin-count external memory for microcontrollers and SoCs in automotive instrument clusters requiring deterministic latency and AEC-Q100 Grade 2 compliance.

For engineers reviewing the S70KS1282GABHV023 datasheet, S70KS1282GABHV023 pinout, S70KS1282GABHV023 application, or S70KS1282GABHV023 equivalent, key selection criteria include HYPERBUS™ timing compatibility, DCARS-enabled read strobe alignment, hybrid sleep mode power management, and FBGA-24 package integration with MCU memory controllers.

Technical Context

The device implements a stacked-die architecture with two 64 Mb DRAM dies sharing a single HYPERBUS™ interface; only one die enters hybrid sleep or deep power down at a time. It uses LV-CMOS signaling on all I/Os and supports both single-ended (11-signal) and optional differential clock (12-signal) configurations.

Read transactions begin with initial access latency (tACC ≤ 35 ns), followed by DDR-aligned 8-bit DQ transfers synchronized to CK/CK#; RWDS functions bidirectionally as refresh latency indicator, read data strobe, and write data mask, with optional DCARS phase-shifted for optimal read-data-eye placement.

Key Specifications

Pinout & Package

24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch), RoHS-compliant, moisture sensitivity level 3 (MSL3). Package supports automated PCB assembly and thermal dissipation in space-constrained automotive modules.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PSRAM applications.

Compared with CY15B104QN-PSOC and IS66WV12816EBLL-15BLI, S70KS1282GABHV023 uniquely balances high density, DDR bandwidth, automotive temperature range, and autonomous refresh - making it the only option that satisfies simultaneous requirements for AEC-Q100 Grade 2, 400 MBps throughput, and FBGA-24 footprint in next-gen instrument clusters.

Availability

S70KS1282GABHV023 is available at Aetrix Electronics and suitable for automotive instrument clusters, ADAS preprocessing units, infotainment head units, and gateway ECUs requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for S70KS1282GABHV023 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D and manufacturing infrastructure.

S70KS1282GABHV023 belongs to the HYPERRAM™ product line, designed specifically to replace parallel NOR/SDRAM in automotive and industrial MCU systems where pin count, power, and refresh simplicity are critical constraints.

FAQ

What is the difference between S70KS1282GABHV023 and S70KL1282?

S70KS1282GABHV023 supports both 1.8 V and 3.0 V VCC/VCCQ supplies and includes DCARS functionality for enhanced read timing margin; S70KL1282 is 1.8 V only and lacks DCARS. The 'S' suffix denotes dual-voltage capability and extended feature set, validated in Infineon's ordering matrix and datasheet Rev. *D Table 13.2.

Does S70KS1282GABHV023 require external refresh circuitry?

No. The device integrates self-refresh logic that autonomously manages DRAM array refresh during idle periods. The host only needs to observe initial access latency and limit burst length per datasheet Section 1 General Description - no external refresh controller or timing signals are required.

Can both 64 Mb dies operate simultaneously in read/write mode?

No. The stacked-die architecture shares a single HYPERBUS™ interface and control logic; only one die is active at a time. Concurrent access to both dies is not supported - all transactions target either Die 0 or Die 1, selected via internal addressing, as shown in the Logic Block Diagram on Datasheet page 3.

What is the purpose of the RWDS signal during write transactions?

During write transactions, RWDS functions as a write data mask: each bit corresponds to one DQ lane and suppresses write operation on that bit when asserted low. This enables partial-byte writes without read-modify-write cycles, reducing bus traffic and power consumption in firmware update scenarios.