Infineon Technologies S70KS1283GABHI020

Overview

S70KS1283GABHI020 from Infineon is a 128 Mb self-refresh DRAM (PSRAM) with octal xSPI interface, operating at 1.8 V or 3.0 V supply, supporting up to 200 MHz DDR clocking and delivering 400 MBps data throughput. It integrates two 64-Mb stacked dice, features configurable burst lengths (16–128 bytes), hybrid sleep and deep power down modes, and targets high-bandwidth, low-power embedded memory expansion in microcontroller-based systems.

For engineers reviewing the S70KS1283GABHI020 datasheet, S70KS1283GABHI020 pinout, S70KS1283GABHI020 application, or S70KS1283GABHI020 equivalent, key selection considerations include xSPI octal timing compliance, RWDS strobe behavior (single/differential/DCARS), partial array refresh support, 24-ball FBGA mechanical fit, and AEC-Q100 Grade 2 temperature qualification (–40°C to +105°C).

Technical Context

This PSRAM implements an octal xSPI interface with 11–12 signal bus count depending on clock configuration (single-ended CK or differential CK/CK#), plus CS#, RESET#, DQ[7:0], and bidirectional RWDS. The RWDS serves dual roles: as a read data strobe (center-aligned with optional DCARS phase shift) and as a write mask input - enabling precise timing control for DDR transfers.

Internally, it uses stacked-die architecture (two 64-Mb DRAM dies), where only one die may enter Hybrid Sleep or Deep Power Down at a time. Refresh is fully autonomous via on-chip logic, eliminating host refresh management while maintaining DRAM density and cost advantages over true SRAM.

Key Specifications

Pinout & Package

Package: 24-ball FBGA, 5 mm × 5 mm, 0.8 mm pitch, RoHS-compliant, moisture sensitivity level 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PSRAM applications.

Compared with S27KL0641DPBHI020 and W9825G6JH-6I, the S70KS1283GABHI020 uniquely delivers 128 Mb in xSPI octal format with stacked-die power partitioning - enabling higher density without sacrificing low-power responsiveness or interface simplicity.

Availability

S70KS1283GABHI020 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial HMIs, edge AI vision modules, and medical patient monitors requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for S70KS1283GABHI020 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D and manufacturing infrastructure.

The HYPERRAM™ product line targets high-speed, low-pin-count memory expansion for resource-constrained embedded processors - bridging the gap between SRAM performance and DRAM density with xSPI simplification.

FAQ

What is the difference between S70KS1283GABHI020 and standard DDR SDRAM?

The S70KS1283GABHI020 is a self-refresh PSRAM with octal xSPI interface, not a standard DDR SDRAM. It requires no external memory controller, no refresh commands from host, and uses only 11–12 signals versus DDR's 30+ pins. Its xSPI protocol handles addressing, command encoding, and timing internally - making it compatible with simple MCU peripherals instead of dedicated DDR PHYs.

Does S70KS1283GABHI020 support both 1.8 V and 3.0 V operation simultaneously?

No. VCC and VCCQ must be supplied at the same voltage: either 1.8 V ±0.15 V or 3.0 V ±0.3 V. Mixed-voltage operation is not supported. The device detects voltage level at power-up and configures I/O thresholds accordingly; switching voltages mid-operation will cause undefined behavior or bus contention.

How does RWDS function during write transactions?

During write transactions, RWDS operates as an input used as a byte-wise write mask. Each rising edge samples one mask bit controlling whether the corresponding DQ[7:0] byte is written to memory. This enables partial-byte updates without read-modify-write cycles - critical for efficient register or status field updates in real-time systems.

Is DCARS functionality enabled by default?

No. DCARS (DDR Center-Aligned Read Strobe) is disabled by default after power-up or reset. It must be explicitly enabled by setting bit 7 of Configuration Register 1 (CR1). Once enabled, RWDS transitions are phase-shifted by one-half CK period relative to CK - moving the strobe edge into the center of the read data eye to maximize setup/hold margin at 200 MHz.