Infineon Technologies S70KS1283GABHI023

Overview

S70KS1283GABHI023 from Infineon is a 128 Mb self-refresh DRAM (PSRAM) with octal xSPI interface, operating at 1.8 V or 3.0 V supply, supporting up to 200 MHz DDR clocking and delivering 400 MBps data throughput. It integrates two 64-Mb stacked dice, features configurable burst lengths (16–128 bytes), hybrid sleep and deep power down modes, and targets high-bandwidth, low-power embedded memory expansion in microcontroller-based systems.

For engineers reviewing the S70KS1283GABHI023 datasheet, S70KS1283GABHI023 pinout, S70KS1283GABHI023 application, or S70KS1283GABHI023 equivalent, key selection factors include its octal xSPI timing compliance, RWDS-based read/write strobe behavior, DCARS phase-shifted read strobe option, partial array refresh capability, and AEC-Q100 Grade 2 automotive qualification (–40°C to +105°C).

Technical Context

This PSRAM implements a dual-die stacked architecture where only one 64-Mb die enters Hybrid Sleep or Deep Power Down at a time. Its xSPI interface supports both single-ended (11-signal) and optional differential clock (12-signal) configurations, with RWDS serving as bidirectional strobe-output during reads (data-valid indicator), input during writes (mask signal), and offset by a phase-shifted clock in DCARS mode to align transitions within the read data eye.

The device uses internal refresh logic to eliminate host-managed refresh cycles, presenting static RAM-like behavior to the controller. Burst access supports linear and wrapped modes (8/16/32/64 clocks), and configuration registers (CR0/CR1) allow runtime control of drive strength, burst type, and power mode entry conditions.

Key Specifications

Pinout & Package

24-ball FBGA package with 5 × 5 array footprint, 0.8 mm ball pitch, and standard JEDEC MO-270AC mechanical outline. Pin assignments are defined per Infineon's datasheet Rev. *C (002-29418), with thermal and mechanical characteristics optimized for high-density PCB layouts in automotive and industrial applications.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PSRAM memory expansion applications.

Compared with S27KL1283DPBHI020, S70KS1283GABHI023 offers AEC-Q100 Grade 2 qualification and tighter DCARS timing control; versus W9825G6JH-15, it delivers 50% higher bandwidth, 3× lower deep power down current, and eliminates parallel bus routing complexity.

Availability

S70KS1283GABHI023 is available at Aetrix Electronics and suitable for automotive ADAS displays, industrial HMIs, edge AI sensor fusion nodes, and portable medical imaging systems requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for S70KS1283GABHI023 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D and manufacturing infrastructure.

S70KS1283 belongs to Infineon's HYPERRAM™ product line, designed specifically to replace parallel PSRAM and low-density LPDDR in MCU-based systems where xSPI simplifies layout, reduces pin count, and enables scalable memory bandwidth without controller complexity.

FAQ

What is the function of the RWDS pin in S70KS1283GABHI023?

RWDS is a bidirectional strobe pin: during reads, it outputs a center-aligned or DCARS-offset strobe synchronized to data valid windows; during writes, it serves as an input mask signal controlling which DQ bits are written. Its dual role eliminates need for separate RD/WR strobes and reduces interface signal count.

Does S70KS1283GABHI023 require external refresh commands from the host?

No. The device contains autonomous refresh logic that performs all required DRAM refresh cycles internally. The host interacts with it as a pseudo-static RAM - no refresh scheduling, timing constraints, or hidden cycles are exposed to software or hardware controller.

Can both 64-Mb dice enter Deep Power Down simultaneously?

No. Due to stacked-die architecture and shared control logic, only one die can be placed into Deep Power Down or Hybrid Sleep mode at a time. This constraint is documented in Note 1 of the datasheet and affects total memory availability during ultra-low-power states.

Is DCARS functionality enabled by default on S70KS1283GABHI023?

No. DCARS is an optional feature controlled via Configuration Register 1 (CR1). It must be explicitly enabled by setting the DCARS_EN bit; otherwise, RWDS operates in standard center-aligned mode. Enabling DCARS requires precise CK-to-RWDS phase calibration in the host controller.