Infineon Technologies S70KS1283GABHV023

Overview

S70KS1283GABHV023 from Infineon is a 128 Mb self-refresh DRAM (PSRAM) with octal xSPI interface, operating at 1.8 V or 3.0 V supply, supporting up to 200 MHz DDR clocking and delivering 400 MBps data throughput. It integrates two 64-Mb stacked dice, features configurable burst lengths (16–128 bytes), hybrid sleep and deep power down modes, and targets high-bandwidth, low-power embedded memory expansion in microcontroller-based systems.

For engineers reviewing the S70KS1283GABHV023 datasheet, S70KS1283GABHV023 pinout, S70KS1283GABHV023 application, or S70KS1283GABHV023 equivalent, key selection criteria include octal xSPI timing compliance, RWDS strobe behavior during read/write, partial array refresh support, DCARS phase-shifted read strobe capability, and AEC-Q100 Grade 2 automotive qualification (–40°C to +105°C).

Technical Context

This PSRAM implements a true self-refresh DRAM core with on-die refresh control logic, eliminating host-managed refresh cycles. Its octal xSPI interface uses CK/CK# differential clocking (12-signal mode) or single-ended CK (11-signal mode), with RWDS serving as bidirectional strobe-output for read latency indication and write mask input-and optional DDR center-aligned read strobe (DCARS) for improved timing margin in high-speed reads.

The device supports linear and wrapped burst configurations across 8-bit DQ[7:0], with burst lengths programmable to 16, 32, 64, or 128 bytes. As a stacked-die part, only one 64-Mb die enters Hybrid Sleep or Deep Power Down at a time, enabling selective power gating while maintaining access to the active die.

Key Specifications

Pinout & Package

24-ball FBGA package with 5 × 5 array, 0.8 mm ball pitch, and standard JEDEC MO-270AC footprint. Pin assignments are defined per Infineon's datasheet Rev. *C (002-29418), with mechanical and thermal characteristics optimized for industrial and automotive reflow profiles.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PSRAM applications.

Compared with S27KL0641DPBHI020 and W9825G6JH-6I, the S70KS1283GABHV023 delivers double density, octal bandwidth, autonomous refresh, and automotive-grade reliability - making it optimal for next-gen displays, AI edge nodes, and safety-critical buffering where timing predictability and power efficiency are design constraints.

Availability

S70KS1283GABHV023 is available at Aetrix Electronics and suitable for automotive ADAS displays, industrial HMIs, edge AI inference accelerators, and smart camera video preprocessing requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for S70KS1283GABHV023 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D and manufacturing infrastructure.

The HYPERRAM™ product line targets high-speed, low-pin-count memory expansion for resource-constrained microcontrollers - designed specifically to replace parallel SRAM and legacy PSRAM in automotive, industrial, and IoT applications demanding DDR-like bandwidth without complex interface logic.

FAQ

What is the function of the RWDS pin in read versus write operations?

RWDS serves as a bidirectional strobe: during reads, it outputs a synchronous signal aligned to data edges to indicate refresh latency and act as read data strobe; during writes, it functions as an input mask signal to selectively disable individual byte lanes. Its behavior is configurable via device registers and supports optional DCARS phase shifting for timing margin improvement.

Does S70KS1283GABHV023 require external refresh management?

No. The device contains on-die self-refresh logic that automatically schedules and executes DRAM refresh cycles without host intervention. The host accesses it as a pseudo-static RAM - no refresh commands, timers, or scheduling routines are needed in firmware, simplifying software integration and improving determinism.

Can both 64-Mb dice operate simultaneously in active mode?

No. While the device integrates two stacked 64-Mb dice, only one die is accessible at a time. Concurrent access is not supported; address mapping spans both dice sequentially, but power modes like Hybrid Sleep and Deep Power Down apply to only one die per command, enabling selective power gating without losing access to the other die.

What is the significance of the "GABHV023" suffix in the part number?

The suffix encodes package, temperature grade, and revision: "GA" = 24-ball FBGA, "BH" = AEC-Q100 Grade 2 (–40°C to +105°C), "V" = 1.8 V/3.0 V dual-voltage I/O, "023" = silicon revision level. This ensures traceability to specific thermal, electrical, and mechanical specifications defined in Infineon's ordering documentation.