Infineon Technologies S71GL064NB0BHW0P0
- Part No.:
- S71GL064NB0BHW0P0
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 56-TFBGA, CSPBGA
- Datasheet:
-
S71GL064NB0BHW0P0.pdf
- Description:
- IC FLASH RAM 64MBIT PAR 56FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:3,356
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Product details
Overview
S71GL064NB0BHW0P0 from Spansion is a stacked Multi-Chip Product (MCP) integrating 64 Mb (4M × 16-bit) 3.0 V-only Page Mode Flash memory and 32 Mb (2M × 16-bit) Pseudo Static RAM in a single 56-ball FBGA package. It supports 90 ns Flash access, 70 ns pSRAM access, and operates across –25°C to +85°C for wireless applications requiring nonvolatile storage and fast SRAM-like execution.
For engineers reviewing the S71GL064NB0BHW0P0 datasheet, S71GL064NB0BHW0P0 pinout, S71GL064NB0BHW0P0 application, or S71GL064NB0BHW0P0 equivalent, key selection criteria include shared address/data bus operation, dual chip enable control (CE1#f/CE1#s/CE2s), boot sector configuration (Top Boot), and 2.7–3.3 V supply compatibility with separate VCCf/VCCS rails.
Technical Context
This MCP implements independent Flash and pSRAM die in a monolithic 7 × 9 mm FBGA, sharing DQ15–DQ0 and A20–A0 (with A21 active for 64 Mb Flash). The Flash uses MirrorBit® 110 nm process with bottom/top boot sector options; the pSRAM is Type 9 with UB#/LB# byte controls and asynchronous interface timing.
Operation requires separate power domains: VCCf (Flash) and VCCs (pSRAM), both rated 2.7–3.3 V. RY/BY# reports Flash busy state; RESET# is active-low hardware reset; WP#/ACC enables write protection or program acceleration. CE1#f selects Flash only; CE1#s and CE2s jointly enable pSRAM.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Flash Density | 64 Mb (4M × 16-bit); enables full firmware image storage with page-mode read capability |
| pSRAM Density | 32 Mb (2M × 16-bit); provides executable code space with SRAM-like random access latency |
| Access Time | 90 ns Flash / 70 ns pSRAM; defines minimum cycle time for sequential instruction fetch or data read |
| Supply Voltage | VCCf = VCCs = 2.7–3.3 V; allows single-voltage system design with isolated rail management |
| Operating Temp | –25°C to +85°C; qualified for wireless infrastructure and industrial edge node deployment |
| Package | 56-ball FBGA (TLC056), 7 × 9 × 1.2 mm; supports high-density PCB layout with fine-pitch (0.8 mm) ball pitch |
| Boot Sector | Top Boot configuration; permits secure bootloader execution from highest-addressed Flash region |
Pinout & Package
56-ball Fine-Pitch Ball Grid Array (FBGA), 7 mm × 9 mm × 1.2 mm body, JEDEC-compliant TLC056 footprint with depopulated balls at A1,A8,D4,D5,E4,E5,H1,H8.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A21–A0 | Address Inputs | A21 active for 64 Mb Flash addressing; A20–A0 shared between Flash and pSRAM |
| DQ15–DQ0 | Data I/O Bus | 16-bit bidirectional data path used by both memory types; requires external bus arbitration |
| CE1#f | Flash Chip Enable | Active-low enable dedicated to Flash die only; decoupled from pSRAM control |
| CE1#s / CE2s | pSRAM Chip Enables | Two active-low enables required simultaneously to activate pSRAM; supports bank selection logic |
| OE# / WE# | Output & Write Enable | Shared across both dies; controls read/write direction on common DQ bus |
| RY/BY# | Flash Ready/Busy | Open-drain output indicating Flash programming/erase operation status |
| RESET# | Hardware Reset | Active-low global reset for Flash controller; does not affect pSRAM state |
| WP#/ACC | Write Protect/Acceleration | Configurable pin: low = hardware write lock; high = program acceleration mode |
| VCCf / VCCs | Power Supplies | Independent 3.0 V rails-VCCf for Flash, VCCs for pSRAM-enabling domain-specific power gating |
| VSS | Ground | Common ground reference for both dies; requires low-impedance PCB plane connection |
Key Features
| Feature | Design Value |
|---|---|
| Stacked MCP Integration | Reduces board area by ~40% vs. discrete Flash + SRAM; eliminates interposer routing complexity |
| MirrorBit® Flash Technology | 110 nm process enabling 90 ns access and endurance >100K program/erase cycles |
| Type 9 pSRAM Core | Self-refreshing pseudo-static architecture eliminating external refresh circuitry |
| Separate Power Domains | VCCf/VCCs isolation allows independent power sequencing and dynamic voltage scaling |
| Top Boot Sector Configuration | Enables secure boot from protected upper Flash region; supports field-upgradable firmware |
Applications
| Wireless Baseband Processing | Industrial HMI Controller |
|---|---|
Use Scenario: Embedded baseband processor in LTE small cell radio requiring local firmware storage and real-time packet buffering. IC Role / Device Role / Timing Role: Flash stores boot code and protocol stack; pSRAM serves as zero-wait-state instruction cache and packet buffer. Use Value: 90 ns Flash access ensures fast boot; 70 ns pSRAM enables deterministic interrupt response under burst traffic load. | Use Scenario: Programmable logic controller (PLC) human-machine interface with local UI rendering and configuration persistence. IC Role / Device Role / Timing Role: Flash retains firmware and UI assets; pSRAM hosts runtime graphics frame buffer and state variables. Use Value: Shared bus reduces MCU GPIO count; Top Boot sector isolates critical boot code from field updates. |
| Automotive Infotainment Head Unit | Medical Diagnostic Imaging Module |
Use Scenario: In-vehicle infotainment system storing navigation maps, audio codecs, and OS kernel with fast resume-from-sleep. IC Role / Device Role / Timing Role: Flash holds compressed assets; pSRAM decompresses and executes code directly without DRAM controller overhead. Use Value: Dual-rail supply supports ASIL-B compliant power domain separation; –25°C to +85°C rating meets automotive cabin requirements. | Use Scenario: Portable ultrasound device requiring rapid image acquisition buffer and persistent calibration data storage. IC Role / Device Role / Timing Role: Flash stores FPGA bitstreams and calibration profiles; pSRAM buffers real-time echo signal samples pre-processing. Use Value: 56-ball FBGA fits compact handheld form factor; 70 ns pSRAM latency matches ADC sampling rate timing constraints. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar stacked Flash+RAM MCP applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| S71GL064NB0BFW0P0 | Same Flash/pSRAM densities and timing, but BF package (lead-free, standard halogen) | Identical thermal and electrical performance; differs only in RoHS compliance level | Select when standard lead-free compliance (not low-halogen) suffices |
| S71GL032NA0BHW0K0 | 32 Mb Flash + 16 Mb pSRAM; 90/70 ns access; same TLC056 package and temperature range | Lower density suitable for cost-sensitive designs with smaller firmware and buffer needs | Choose when memory footprint and BOM cost are prioritized over scalability |
Compared with S71GL064NB0BHW0P0, the BF variant offers identical functionality with standard lead-free compliance, while the S71GL032NA0BHW0K0 reduces density and cost for less demanding applications-both retain shared bus architecture and Top Boot configuration.
Availability
S71GL064NB0BHW0P0 is available at Aetrix Electronics and suitable for wireless infrastructure, industrial HMI controllers, and automotive infotainment systems requiring stable component supply with guaranteed long-term lifecycle support.
Supply support for S71GL064NB0BHW0P0 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Spansion Inc. was a fabless semiconductor company specializing in flash memory and microcontrollers, later acquired by Cypress Semiconductor in 2015 and integrated into Infineon Technologies.
The S71GL-N series targets embedded systems needing compact, low-power nonvolatile memory with integrated execution RAM-designed specifically for space-constrained wireless, industrial, and automotive applications where board real estate and power efficiency are critical.
FAQ
What is the function of the WP#/ACC pin on S71GL064NB0BHW0P0?
The WP#/ACC pin serves dual roles: pulled low, it enables hardware write protection for the Flash memory, preventing accidental program/erase operations; pulled high, it activates acceleration mode during programming to reduce pulse width requirements and improve write throughput. This pin does not affect pSRAM operation.
Can S71GL064NB0BHW0P0 operate with a single 3.0 V supply?
No-S71GL064NB0BHW0P0 requires two independent 2.7–3.3 V supplies: VCCf for the Flash die and VCCs for the pSRAM die. These rails must be separately decoupled and may be powered in any sequence, but both must be within specification before asserting CE signals to avoid undefined behavior or latch-up risk.
How does the CE1#s and CE2s pin combination control the pSRAM?
The pSRAM requires both CE1#s and CE2s to be asserted low simultaneously for device selection-neither alone enables the pSRAM. This dual-enable scheme prevents partial activation during bus contention and supports hierarchical memory mapping when multiple MCPs share the same address/data bus in larger systems.
Is the RY/BY# signal compatible with standard Flash ready/busy interfaces?
Yes-RY/BY# is an open-drain output that sinks current when Flash is busy (programming or erasing) and floats high when ready. It connects directly to standard MCU GPIO pins with pull-up resistors and is electrically and functionally compatible with industry-standard Flash RY/BY# timing specifications per JEDEC JESD22-A117.
S71GL064NB0BHW0P0 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- GL-N
- Package/Case:
- 56-TFBGA, CSPBGA
- Packaging:
- Bag
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile, Volatile
- Memory Format:
- FLASH, RAM
- Technology:
- FLASH, PSRAM
- Memory Size:
- 64Mbit (FLASH), 32Mbit (RAM)
- Memory Organization:
- 4M x 16, 2M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 90 ns
- Voltage - Supply:
- 2.7V ~ 3.3V
- Operating Temperature:
- -25°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 56-FBGA, CSP (7x9)
S71GL064NB0BHW0P0 FAQ
1.How can I place an order for S71GL064NB0BHW0P0 through Aetrix?
Please submit a Request for Quotation (RFQ) for S71GL064NB0BHW0P0 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
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The price and inventory of S71GL064NB0BHW0P0 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for S71GL064NB0BHW0P0 is usually 5 days.
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5.How can I obtain technical support or documentation for S71GL064NB0BHW0P0?
For technical support, including S71GL064NB0BHW0P0 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your S71GL064NB0BHW0P0 requirements.
6.How does Aetrix verify that S71GL064NB0BHW0P0 is sourced from the original manufacturer or authorized distributors?
All S71GL064NB0BHW0P0 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that S71GL064NB0BHW0P0 meets industry standards.
7.What is the process for return or replacement of S71GL064NB0BHW0P0?
All S71GL064NB0BHW0P0 units undergo pre-shipment inspection (PSI). If there is an issue with S71GL064NB0BHW0P0, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The S71GL064NB0BHW0P0 part is unused and in its original packaging.
Return procedure for S71GL064NB0BHW0P0:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
S71GL064NB0BHW0P0 Tags

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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology

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AT21CS01-STUM10-T
Microchip Technology

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Microchip Technology

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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics

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Microchip Technology

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93LC46BT-I/OT
Microchip Technology

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Microchip Technology

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AT24C08C-STUM-T
Microchip Technology
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