Infineon Technologies S71KL256SC0BHB000

Overview

S71KL256SC0BHB000 from Cypress Semiconductor is a 3.0V HyperBus Multi-Chip Package integrating 256 Mb (32 MB) HyperFlash NOR memory and 64 Mb (8 MB) HyperRAM self-refresh DRAM in a single FBGA-24 package. It delivers high-speed DDR interface operation up to 100 MHz (200 MB/s), supports chip-select isolation between Flash and RAM, and enables compact embedded systems requiring concurrent code execution and fast data buffering.

For engineers reviewing the S71KL256SC0BHB000 datasheet, S71KL256SC0BHB000 pinout, S71KL256SC0BHB000 application, or S71KL256SC0BHB000 equivalent, key selection criteria include HyperBus interface timing compliance, dual-memory arbitration behavior, RWDS bidirectional strobe/mask functionality, and FBGA-24 mechanical compatibility with 6 × 8 × 1.0 mm footprint.

Technical Context

The device implements a shared HyperBus interface with separate chip selects (CS1# for HyperFlash, CS2# for HyperRAM), enabling independent access without bus contention. It uses a single-ended clock (CK) at 3.0V, with RWDS serving as both read data strobe and write data mask for HyperRAM only.

Internal power domains are segregated: VCC/VSS for core logic, VCCQ/VSSQ for I/O, and RESET# affects HyperFlash only while RSTO# provides system-level POR signaling. The MCP architecture maintains signal integrity by minimizing trace count versus discrete memory solutions.

Key Specifications

Pinout & Package

Package: FBGA-24, 6 mm × 8 mm × 1.0 mm body, 5×5 ball array, pitch 0.4 mm, ELA024 outline.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar HyperBus MCP memory applications.

Compared with S71KL512SC0BHB000, this part trades Flash capacity for cost-sensitive designs needing exactly 32 MB code space; compared with S27KL0641FABHI020, it eliminates interconnect complexity and timing skew between discrete memories but fixes Flash/RAM ratio.

Availability

S71KL256SC0BHB000 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial HMI panels, and medical imaging displays requiring stable component supply across extended product lifecycles.

Supply support for S71KL256SC0BHB000 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and microcontroller solutions for embedded systems, emphasizing interface efficiency and system integration.

This part belongs to the HyperBus MCP product line, engineered to replace discrete Flash + RAM combinations in space-constrained, high-bandwidth applications such as automotive dashboards and industrial HMIs.

FAQ

What is the function of the RWDS pin on S71KL256SC0BHB000?

RWDS is a bidirectional pin: it outputs a read data strobe synchronized to HyperFlash or HyperRAM reads, and inputs a write data mask during HyperRAM writes only. At transaction start, RWDS indicates initial latency (1 = extra cycle). It is not used as a mask for HyperFlash writes.

Can S71KL256SC0BHB000 operate with a differential clock (CK/CK#)?

No. This 3.0V variant uses only single-ended CK; CK# is reserved (RFU) and unconnected. Differential clock operation is exclusive to 1.8V HyperBus MCP parts like S71KS512SC0. Using CK# on this part violates electrical specifications and may cause interface failure.

How does chip select isolation work between HyperFlash and HyperRAM?

CS1# controls HyperFlash; CS2# controls HyperRAM. Only one may be asserted low at a time. The datasheet mandates mutual exclusion - simultaneous activation causes undefined behavior and violates timing margins. Hardware or firmware must enforce strict time-multiplexing.

Is RESET# connected to HyperRAM in this MCP?

No. RESET# is connected exclusively to the HyperFlash die. It has no effect on HyperRAM operation or state. HyperRAM remains powered and retains self-refresh capability during HyperFlash reset. RSTO# and INT# also originate solely from the HyperFlash section.