Infineon Technologies S71KL256SC0BHB003

Overview

S71KL256SC0BHB003 from Cypress Semiconductor is a 3.0V HyperBus Multi-Chip Package integrating 256 Mb (32 MB) HyperFlash NOR memory and 64 Mb (8 MB) HyperRAM self-refresh DRAM in a single FBGA-24 package. It supports DDR operation at up to 100 MHz (200 MB/s), uses single-ended clock (CK), dual chip selects (CS1#, CS2#), and bidirectional RWDS for latency signaling and data masking. Used in embedded systems requiring concurrent code execution and high-bandwidth data buffering, such as automotive infotainment boot loaders.

For engineers reviewing the S71KL256SC0BHB003 datasheet, S71KL256SC0BHB003 pinout, S71KL256SC0BHB003 application, or S71KL256SC0BHB003 equivalent, key selection criteria include HyperBus interface timing compliance, dual-memory arbitration behavior, RWDS-driven latency management, and FBGA-24 board layout constraints for signal integrity.

Technical Context

The device implements a shared HyperBus interface with time-multiplexed access between Flash and RAM via independent chip selects (CS1# for HyperFlash, CS2# for HyperRAM). All transactions use a single-ended 3.0V CK input and 8-bit DQ[7:0] bus, with RWDS serving as both read data strobe and write data mask (HyperRAM only).

It operates with differential power domains: VCC/VSS for core logic and VCCQ/VSSQ for I/O, enabling stable 3.0V signaling while supporting mixed-voltage system integration. Optional RSTO#, INT#, and RESET# signals provide hardware reset coordination, interrupt notification, and POR synchronization across both memory dies.

Key Specifications

Pinout & Package

Package: FBGA-24, 6 mm × 8 mm × 1.0 mm, ELA024 outline, 5×5 ball array with 0.4 mm pitch. Balls A1 and E5 are corner markers; C2 = CS1#, A3 = CS2#, B1 = RFU (not connected) in 3.0V variant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar HyperBus MCP memory applications.

Compared with S71KL512SC0BHB003 and S71KS512SC0BHB003, S71KL256SC0BHB003 offers optimal cost-performance balance for mid-size firmware deployments where 256 Mb Flash suffices and 3.0V signaling meets system voltage architecture.

Availability

S71KL256SC0BHB003 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial HMIs, and medical imaging consoles requiring stable component supply, long-lifecycle support, and validated HyperBus interoperability.

Supply support for S71KL256SC0BHB003 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and microcontroller solutions for automotive, industrial, and IoT applications, with emphasis on signal integrity and system-level integration.

This part belongs to the HyperBus MCP product line, engineered to replace discrete Flash + DRAM combinations in space-constrained, high-throughput embedded systems requiring deterministic memory access and simplified board routing.

FAQ

What is the function of RWDS in S71KL256SC0BHB003?

RWDS is a bidirectional signal that serves three roles: (1) outputs a latency indicator (1 = +1 cycle) at the start of every transaction, (2) acts as read data strobe during HyperFlash/HyperRAM reads, and (3) functions as write data mask only during HyperRAM writes. It is never used as a mask for HyperFlash writes.

Can S71KL256SC0BHB003 operate with both memories active simultaneously?

No. Only one memory may be selected at a time via CS1# or CS2#. Simultaneous activation violates the HyperBus specification and risks bus contention. However, background Flash operations (e.g., erase) may proceed while HyperRAM is actively read/written, provided CS1# remains deasserted during RAM access.

Is the RSTO# signal synchronized to HyperFlash or HyperRAM power-on reset?

RSTO# is generated exclusively by the HyperFlash die upon completion of its internal Power-On Reset sequence. It is not tied to HyperRAM POR behavior. The timeout period before RSTO# releases is user-configurable via HyperFlash register settings, enabling alignment with system-level reset timing requirements.

Does S71KL256SC0BHB003 support Deep Power Down mode?

Yes. Both HyperFlash and HyperRAM dies support Deep Power Down (DPD), and the combined DPD current is the sum of individual DPD currents (typically <10 µA total). Entry requires asserting CS1# or CS2# while issuing the respective DPD command; both memories must be placed in DPD independently.