Infineon Technologies S71KL512SC0BHB000

Overview

S71KL512SC0BHB000 from Cypress Semiconductor is a 3.0V HyperBus™ Multi-Chip Package integrating 512 Mb (64 MB) HyperFlash™ NOR memory and 64 Mb (8 MB) HyperRAM™ self-refresh DRAM in a single FBGA-24 package. It supports high-speed DDR interface with single-ended clock (CK), dual chip select (CS1#/CS2#), bidirectional RWDS, and 8-bit DQ bus - enabling boot code storage and real-time data buffering in space-constrained embedded systems.

For engineers reviewing the S71KL512SC0BHB000 datasheet, S71KL512SC0BHB000 pinout, S71KL512SC0BHB000 application, or S71KL512SC0BHB000 equivalent, key selection criteria include 3.0V VCC/VCCQ operation, 100 MHz clock rate (200 MB/s), dual-memory arbitration via CS1#/CS2#, RWDS-based latency signaling, and FBGA-24 (6 × 8 × 1.0 mm) footprint compatibility with PCB routing constraints.

Technical Context

This MCP implements a shared HyperBus interface with strict time-multiplexed access: CS1# enables HyperFlash for execute-in-place (XIP) code execution and firmware updates; CS2# enables HyperRAM for low-latency, burst-access data storage with self-refresh capability. RWDS serves as both read data strobe and write data mask - critical for timing alignment in DDR transfers.

The device uses single-ended CK (no CK#), operates at 3.0V core/I/O, and integrates optional signals including open-drain INT# (HyperFlash event notification), RESET# (HyperFlash-only hardware reset), and RSTO# (user-configurable POR output). VSS and VSSQ are internally connected; CK# is reserved (RFU) per datasheet.

Key Specifications

Pinout & Package

Package: FBGA-24, 6 mm × 8 mm × 1.0 mm, 5×5 ball array (ELA024), RoHS-compliant, lead-free. Ball pitch: 0.4 mm; solder balls: 24 populated positions.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar multi-die memory package applications.

Compared with S71KS512SC0BHB000, this part trades differential signaling for higher noise tolerance at 3.0V, while versus S71KL256SC0BHB000 it doubles Flash capacity for field-upgradable features - making it optimal for industrial gateways requiring secure, scalable firmware storage and real-time data buffering.

Availability

S71KL512SC0BHB000 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial HMI controllers, and edge AI inference accelerators requiring stable component supply, long-lifecycle support, and qualified industrial-grade temperature performance.

Supply support for S71KL512SC0BHB000 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and microcontroller solutions for embedded systems, emphasizing signal integrity, power efficiency, and automotive qualification.

This part belongs to the HyperBus™ MCP product line, engineered to replace discrete Flash+DRAM combinations in bandwidth-constrained, space-limited applications such as automotive displays and industrial controllers.

FAQ

Can S71KL512SC0BHB000 operate with 1.8V I/O voltage?

No. This part is strictly a 3.0V device: VCC and VCCQ must be supplied at 3.0V ± 0.3V. The 1.8V variant is S71KS512SC0BHB000, which uses differential CK/CK# and is not pin-compatible. Applying 1.8V to VCC/VCCQ will result in undefined behavior and failure to initialize.

How is memory arbitration handled between HyperFlash and HyperRAM?

Arbitration is hardware-enforced via dedicated chip selects: CS1# activates HyperFlash only; CS2# activates HyperRAM only. Both cannot be asserted simultaneously. The HyperBus controller must sequence accesses - no internal arbitration logic exists. Violating this causes bus contention and data corruption.

What is the function of RWDS during a HyperRAM write transaction?

During HyperRAM writes, RWDS acts as a write data mask (WDM), sampled on CK edges to indicate which DQ[7:0] bits are valid in each transfer. It is not used for HyperFlash writes. RWDS is always output at transaction start to signal initial latency - '1' means one extra clock cycle is required before data transfer begins.

Is RSTO# connected to HyperRAM functionality?

No. RSTO# is generated solely by the HyperFlash portion of the MCP and reflects its internal Power-On Reset status. HyperRAM has no RSTO# interaction and remains in its prior state during RSTO# assertion. System designers must manage HyperRAM reset separately if required, typically via CS2# deassertion and initialization sequence.