Infineon Technologies S71KL512SC0BHB003

Overview

S71KL512SC0BHB003 from Cypress Semiconductor is a 3.0V HyperBus™ Multi-Chip Package integrating 512 Mb (64 MB) HyperFlash™ and 64 Mb (8 MB) HyperRAM™ in a single FBGA-24 package. It serves as a high-density, low-pin-count memory subsystem for embedded host processors requiring concurrent non-volatile code storage and fast self-refresh DRAM. Key confirmed parameters: 3.0V VCC, single-ended CK clock, 8-bit DQ bus, RWDS bidirectional strobe/mask, and 100 MHz max clock rate (200 MB/s).

For engineers reviewing the S71KL512SC0BHB003 datasheet, S71KL512SC0BHB003 pinout, S71KL512SC0BHB003 application, or S71KL512SC0BHB003 equivalent, this page delivers verified electrical behavior, validated signal roles, package-mapped terminal functions, and real-world use context for boot memory + runtime RAM consolidation in space-constrained industrial and automotive control systems.

Technical Context

The device implements a dual-die MCP architecture with independent HyperFlash and HyperRAM dies sharing a common 11-signal HyperBus interface. Chip select CS1# routes commands exclusively to HyperFlash; CS2# isolates HyperRAM access. RWDS operates as read data strobe during Flash reads and write mask during HyperRAM writes - no shared timing arbitration logic required.

All transactions are synchronous to single-ended CK at up to 100 MHz. The 3.0V I/O domain supports VCCQ = VCC = 3.0V, eliminating level-shifting. Optional RSTO# provides system-level POR signaling; INT# reports HyperFlash internal events; RESET# resets only HyperFlash, leaving HyperRAM state unaffected.

Key Specifications

Pinout & Package

Package: ELA024 FBGA-24, 6 × 8 × 1.0 mm, 5×5 ball array with 0.4 mm pitch. Balls A1–E5 populated; B1 (CK#) is RFU in 3.0V devices. VSS and VSSQ internally connected.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-memory subsystem applications.

Compared with S71KS512SC0BHB003, the 3.0V variant trades peak bandwidth for simplified power delivery and broader controller compatibility; compared with discrete HyperFlash, it eliminates DRAM interface design complexity but fixes HyperRAM capacity at 64 Mb.

Availability

S71KL512SC0BHB003 is available at Aetrix Electronics and suitable for automotive ADAS ECUs, industrial PLCs, and medical edge nodes requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for S71KL512SC0BHB003 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and microcontroller solutions for embedded systems, emphasizing signal integrity, low-power operation, and automotive qualification.

This part belongs to the HyperBus™ MCP product line, engineered to replace discrete Flash + DRAM combinations in space- and pin-constrained applications where deterministic boot and real-time buffer performance are critical.

FAQ

Is S71KL512SC0BHB003 pin-compatible with S71KS512SC0BHB003?

No. While both use FBGA-24 packages, S71KL512SC0BHB003 uses single-ended CK and leaves CK# (B1) RFU, whereas S71KS512SC0BHB003 requires differential CK/CK# signaling. Ball assignments for power and ground differ to accommodate voltage domain separation in the 1.8V variant.

Can HyperRAM and HyperFlash be accessed simultaneously?

No. Only one chip select (CS1# or CS2#) may be asserted low at a time. Concurrent access is prohibited by HyperBus protocol; attempting simultaneous activation results in undefined bus behavior and potential data corruption.

What is the function of RWDS during a HyperFlash read versus a HyperRAM write?

During HyperFlash reads, RWDS outputs a read data strobe aligned to valid DQ transitions. During HyperRAM writes, RWDS acts as a write data mask - sampled on CK rising edges to gate individual byte lanes. Its role is defined by the active chip select and transaction type, not configurable via register.

Does RESET# affect HyperRAM operation?

No. RESET# is connected only to the HyperFlash die. When asserted, it resets HyperFlash to idle state and places its DQ/RWDS pins in high-impedance, but HyperRAM continues normal operation unless CS2# is deasserted or power is cycled.