Infineon Technologies S71KL512SC0BHV000

Overview

S71KL512SC0BHV000 from Cypress Semiconductor is a 3.0V HyperBus™ Multi-Chip Package integrating 512 Mb (64 MB) HyperFlash™ NOR flash and 64 Mbit (8 MB) HyperRAM™ self-refresh DRAM in a single FBGA-24 package. It delivers high-speed DDR interface with up to 200 MB/s throughput, differential timing control via single-ended CK, and dual chip select (CS1#, CS2#) for independent memory access - deployed in embedded boot code storage and real-time frame buffer applications.

For engineers reviewing the S71KL512SC0BHV000 datasheet, S71KL512SC0BHV000 pinout, S71KL512SC0BHV000 application, or S71KL512SC0BHV000 equivalent, key selection criteria include 3.0V I/O compatibility, HyperBus™ signal mapping (CK, RWDS, DQ[7:0]), dual-memory arbitration behavior, and FBGA-24 mechanical footprint alignment with PCB layout constraints.

Technical Context

This MCP implements a shared HyperBus™ physical layer with separate command/address/data paths routed to two die: one HyperFlash™ for non-volatile program storage and one HyperRAM™ for volatile high-bandwidth data buffering. The interface uses a single-ended 3.0V clock (CK), bidirectional RWDS for read strobe/write mask, and dedicated chip selects (CS1# for Flash, CS2# for RAM) to isolate transaction domains.

Electrical operation requires strict sequencing: only one CS# may be asserted low at a time; RESET# affects HyperFlash only; RSTO# provides POR indication; and INT# signals internal Flash events. RWDS transitions at bus start indicate refresh latency, enabling deterministic timing for real-time systems.

Key Specifications

Pinout & Package

Package: ELA024 FBGA-24, 6 mm × 8 mm × 1.0 mm body, 0.4 mm ball pitch, 5×5 ball array with A1 corner marked by chamfer. VSS and VSSQ are internally connected; CK# (B1) is RFU in 3.0V devices.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar HyperBus™ MCP memory applications.

Compared with S71KL512SC0BHV000, the 1.8V S71KS512SC0 offers better signal integrity at higher frequencies but demands additional voltage translation; the lower-density S71KL256SC0 trades storage headroom for lower power and cost in resource-constrained edge nodes.

Availability

S71KL512SC0BHV000 is available at Aetrix Electronics and suitable for automotive infotainment boot, industrial HMI frame buffer, and medical imaging edge device applications requiring stable component supply across extended product lifecycles.

Supply support for S71KL512SC0BHV000 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and microcontroller solutions for embedded systems, with expertise in non-volatile and volatile memory integration.

This part belongs to the HyperBus™ MCP family, engineered to replace discrete flash + PSRAM combinations in space-constrained, high-throughput embedded systems where deterministic timing and board-level integration are critical.

FAQ

Is S71KL512SC0BHV000 pin-compatible with S71KS512SC0BHV000?

Yes, both use identical ELA024 FBGA-24 package and ball map, including CS1#, CS2#, DQ[7:0], RWDS, and CK. However, S71KS512SC0 requires CK# (B1) for differential clocking and operates at 1.8V I/O, while S71KL512SC0 uses single-ended CK and 3.0V I/O - power and clock circuitry must be redesigned accordingly.

Can HyperFlash and HyperRAM be accessed simultaneously?

No. The HyperBus™ protocol mandates exclusive chip select activation: only CS1# or CS2# may be low at any time. Concurrent access would cause bus contention and undefined behavior. Arbitration must be handled by the host controller using sequential CS# assertion with appropriate inter-access delays.

What is the function of RWDS during HyperRAM write operations?

During HyperRAM writes, RWDS acts as a write data mask: each rising edge samples one byte of DQ[7:0], and the mask determines whether that byte is written to the target address. This enables partial writes without read-modify-write cycles, reducing latency and power in burst-oriented data logging.

Does RESET# affect HyperRAM functionality?

No. RESET# is connected only to the HyperFlash die. When asserted, it resets Flash state and forces DQ/RWDS to Hi-Z, but HyperRAM remains unaffected - its internal self-refresh continues, and CS2# remains functional. This allows safe Flash reinitialization without disrupting active RAM data buffers.