Infineon Technologies S71KL512SC0BHV003

Overview

S71KL512SC0BHV003 from Cypress Semiconductor is a 3.0V HyperBus™ Multi-Chip Package integrating 512 Mb (64 MB) HyperFlash™ and 64 Mb (8 MB) HyperRAM™ in a single FBGA-24 package. It serves as a high-density, low-pin-count memory subsystem for embedded boot and runtime execution, supporting DDR interface at up to 100 MHz (200 MB/s), with separate chip selects (CS1#, CS2#) for independent Flash and RAM access in automotive and industrial applications.

For engineers reviewing the S71KL512SC0BHV003 datasheet, S71KL512SC0BHV003 pinout, S71KL512SC0BHV003 application, or S71KL512SC0BHV003 equivalent, key selection criteria include 3.0V single-ended clock (CK), RWDS bidirectional strobe/mask functionality, dual-memory isolation via dedicated chip selects, and FBGA-24 footprint compatibility with board space-constrained designs.

Technical Context

The device implements a shared 8-bit DDR data bus (DQ[7:0]) and a common RWDS signal that functions as read data strobe for HyperFlash and write data mask for HyperRAM. Chip select separation (CS1# for HyperFlash, CS2# for HyperRAM) ensures independent command execution without arbitration overhead.

It uses a single-ended 3.0V clock (CK) - differential CK/CK# is not supported - and includes optional open-drain signals: INT# for HyperFlash event notification and RSTO# for system-level power-on reset generation. RESET# applies only to HyperFlash and places DQ/RWDS in high-Z during initialization.

Key Specifications

Pinout & Package

Package: ELA024 FBGA-24, 6 mm × 8 mm × 1.0 mm, 5×5 ball array with 0.4 mm pitch. VSS and VSSQ are internally connected; CK# (B1) is reserved-for-future-use (RFU) in 3.0V variants.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-memory subsystem applications.

Compared with S71KS512SC0BHV003, the 1.8V variant trades voltage compatibility for noise margin; compared with S71KL256SC0BHV003, this part doubles Flash capacity without increasing board area or interface complexity - making it optimal for feature-rich firmware deployments.

Availability

S71KL512SC0BHV003 is available at Aetrix Electronics and suitable for automotive ADAS ECUs, industrial HMIs, and edge AI accelerators requiring stable component supply, long-lifecycle support, and AEC-Q100-compliant memory subsystems.

Supply support for S71KL512SC0BHV003 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and microcontroller solutions for automotive, industrial, and IoT applications, with emphasis on reliability and integration.

This part belongs to the HyperBus™ MCP product line, engineered to replace discrete Flash+DRAM combinations in space-constrained, high-bandwidth embedded systems - specifically targeting boot-time optimization and real-time data buffering.

FAQ

Does S71KL512SC0BHV003 support simultaneous read/write to HyperFlash and HyperRAM?

No. Only one chip select (CS1# or CS2#) may be active at a time. While the memories share the DQ and RWDS lines, the HyperBus protocol enforces sequential access - the host must complete all transactions on one memory before asserting the other's chip select. This prevents bus contention but requires careful scheduling in multi-threaded firmware.

What is the function of RWDS during HyperRAM write operations?

During HyperRAM writes, RWDS serves as a write data mask: each bit controls whether the corresponding DQ[7:0] bit is written to the RAM array. When RWDS is low, the associated DQ bit is masked (not written); when high, the DQ bit is written. This enables partial-byte writes without read-modify-write cycles, reducing latency and power in burst-oriented applications.

Can RESET# be used to reset HyperRAM?

No. RESET# is connected exclusively to the HyperFlash die and has no effect on HyperRAM. The HyperRAM remains powered and retains its contents during HyperFlash reset. To reset HyperRAM, the host must issue a HyperRAM-specific reset command via the HyperBus interface - which requires CS2# assertion and proper command sequence per the HyperRAM datasheet.

Is RSTO# asserted during HyperRAM-only operation?

No. RSTO# is generated solely by the HyperFlash die during its internal Power-On Reset (POR) sequence. It is not triggered by HyperRAM activity, clock stops, or standby transitions. RSTO# remains high-impedance unless HyperFlash undergoes POR - typically at power-up or after RESET# deassertion - making it a reliable indicator of Flash readiness only.