Infineon Technologies S71KS512SC0BHB003

Overview

S71KS512SC0BHB003 from Cypress Semiconductor is a 1.8V HyperBus™ Multi-Chip Package integrating 512 Mb (64 MB) HyperFlash™ and 64 Mbit (8 MB) HyperRAM™ in a single FBGA-24 package. It serves as a high-bandwidth, low-pin-count memory subsystem for embedded applications requiring concurrent code execution and fast data buffering, with DDR operation up to 166 MHz (333 MB/s), differential clock interface (CK/CK#), and dual chip select (CS1#/CS2#) for independent Flash and RAM access.

For engineers reviewing the S71KS512SC0BHB003 datasheet, S71KS512SC0BHB003 pinout, S71KS512SC0BHB003 application, or S71KS512SC0BHB003 equivalent, key selection considerations include HyperBus interface timing compliance, 1.8V I/O voltage domain separation, RWDS bidirectional strobe/mask behavior, and FBGA-24 mechanical compatibility with 6 × 8 × 1.0 mm footprint and 0.4 mm ball pitch.

Technical Context

The device implements a dual-die MCP architecture with physically isolated HyperFlash and HyperRAM dies sharing a common HyperBus interface. It uses differential clocking (CK/CK#) for precise timing control and supports DDR transfers on DQ[7:0] with RWDS acting as both read data strobe and write data mask-only for HyperRAM writes.

Chip select signals CS1# and CS2# are dedicated per die, enabling independent command execution without bus arbitration. The RSTO# output provides configurable POR signaling, while INT# delivers open-drain interrupt notification exclusively from the HyperFlash die; RESET# affects only HyperFlash and places RWDS/DQ into Hi-Z.

Key Specifications

Pinout & Package

Package: ELA024 / VAA024 compliant FBGA-24, 6 mm × 8 mm × 1.0 mm body, 0.4 mm ball pitch, 5×5 ball array with two balls depopulated (A1 marked by chamfer/laser). VSS and VSSQ internally connected; CK# (B1) reserved for 1.8V devices only and RFU in 3V variants.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar HyperBus memory subsystem applications.

Compared with S71KL512SC0BHB003 and S26KS512SDPBH003, the S71KS512SC0BHB003 uniquely delivers co-located Flash+RAM with differential clocking, enabling tighter timing margins in automotive and industrial systems where EMI resilience and board space are critical constraints.

Availability

S71KS512SC0BHB003 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial HMIs, and medical imaging front-ends requiring stable component supply across extended temperature ranges (−40°C to +105°C) and long lifecycle support.

Supply support for S71KS512SC0BHB003 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and microcontroller solutions for automotive, industrial, and IoT applications, with emphasis on signal integrity, low-power operation, and system-level integration.

The HyperBus™ product line targets memory-constrained embedded systems needing high bandwidth without parallel bus complexity - specifically enabling XIP-capable Flash + self-refresh DRAM co-location in space-sensitive designs.

FAQ

What is the function of RWDS in S71KS512SC0BHB003?

RWDS is a bidirectional signal: it outputs a read data strobe aligned with DQ[7:0] during all read transactions, and acts as a write data mask input exclusively for HyperRAM writes. At transaction start, RWDS indicates initial latency requirement (1 = additional cycle, 0 = none), and is never used as a mask for HyperFlash operations.

Can S71KS512SC0BHB003 operate with only one memory active?

Yes - only one chip select (CS1# or CS2#) may be asserted low at a time. When CS1# is active, HyperFlash responds and HyperRAM enters standby; when CS2# is active, HyperRAM operates and HyperFlash remains in standby. Both memories share DQ/RWDS/CK but are electrically isolated via dedicated selects.

Is CK# required for proper operation of S71KS512SC0BHB003?

Yes - CK# is mandatory for 1.8V operation as it forms the differential clock pair with CK. The device relies on crossing-edge detection of CK/CK# for DDR timing; omitting or mismatching CK# skew violates setup/hold requirements and causes bus failure. CK# (B1) is RFU only in 3V variants like S71KL512SC0.

Does RESET# affect HyperRAM functionality in S71KS512SC0BHB003?

No - RESET# is connected solely to the HyperFlash die. It forces HyperFlash into idle state and places RWDS/DQ[7:0] into high-impedance, but has no electrical connection to HyperRAM. HyperRAM remains powered and retains self-refresh state unless VCC/VCCQ are cycled or CS2# is deasserted.