Infineon Technologies S71KS512SC0BHV000

Overview

S71KS512SC0BHV000 from Cypress Semiconductor is a 1.8V HyperBus™ Multi-Chip Package integrating 512 Mb (64 MB) HyperFlash™ and 64 Mbit (8 MB) HyperRAM™ in a single FBGA-24 package. It serves as a high-bandwidth, low-pin-count memory subsystem for embedded host processors requiring concurrent code execution and fast data buffering, with DDR interface, differential clock support, and integrated chip select isolation between Flash and RAM.

For engineers reviewing the S71KS512SC0BHV000 datasheet, S71KS512SC0BHV000 pinout, S71KS512SC0BHV000 application, or S71KS512SC0BHV000 equivalent, key selection criteria include HyperBus interface voltage (1.8V), dual-memory arbitration timing, RWDS latency signaling, CK/CK# differential clock compatibility, and FBGA-24 mechanical footprint compliance.

Technical Context

The device implements a shared 8-bit DDR data bus (DQ[7:0]) with separate chip selects (CS1# for HyperFlash, CS2# for HyperRAM), enabling time-multiplexed access without bus contention. RWDS functions bidirectionally: as read data strobe during Flash/RAM reads and as write mask only for HyperRAM writes.

It uses a 1.8V I/O interface with differential clock pair (CK/CK#), supporting up to 166 MHz operation (333 MB/s throughput). The internal architecture isolates power domains (VCC/VCCQ, VSS/VSSQ) and includes optional open-drain signals (INT#, RSTO#, RESET#) for system-level event notification and reset coordination.

Key Specifications

Pinout & Package

Package: FBGA-24, 6 × 8 × 1.0 mm, 5×5 ball array (ELA024 outline), with VSS/VSSQ internally connected and CK# marked RFU in 3V variants - confirmed active on this 1.8V part.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-memory subsystem applications.

Compared with S71KL512SC0BHV000, the 3V variant trades differential noise immunity for simpler clocking; compared with discrete pairing, the MCP sacrifices flexibility for space and signal integrity - optimal where board area and EMI are critical constraints.

Availability

S71KS512SC0BHV000 is available at Aetrix Electronics and suitable for automotive ADAS ECUs, industrial HMIs, medical imaging edge nodes, and 5G small cell baseband designs requiring stable component supply and long-term lifecycle assurance.

Supply support for S71KS512SC0BHV000 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and microcontroller solutions for embedded systems, emphasizing signal integrity, low-power operation, and automotive-grade reliability.

This part belongs to the HyperBus™ MCP product line, engineered to replace parallel NOR+DRAM combinations in space-constrained, high-throughput applications where DDR bandwidth and minimal pin count are critical.

FAQ

What is the function of RWDS in S71KS512SC0BHV000?

RWDS serves three distinct roles: (1) at transaction start, it outputs a latency indicator (1 = additional wait state required); (2) during HyperFlash/HyperRAM reads, it acts as edge-aligned read data strobe; (3) during HyperRAM writes, it functions as input write data mask. It is never used as mask for HyperFlash writes.

Can CS1# and CS2# be asserted simultaneously?

No. The device architecture enforces mutual exclusion: asserting both CS1# and CS2# simultaneously violates timing and may cause undefined bus behavior or data corruption. The HyperBus specification requires only one chip select active per transaction, and the MCP's internal logic does not arbitrate concurrent access.

Is CK# required for proper operation?

Yes - for S71KS512SC0BHV000 (1.8V variant), CK# is mandatory. This part uses differential clocking; CK/CK# crossing edges define DDR sampling points. Leaving CK# unconnected or mismatched terminates reliable operation. CK# is RFU only on 3.0V variants like S71KL512SC0.

Does RESET# affect HyperRAM functionality?

No. RESET# is connected exclusively to the HyperFlash die within the MCP. When asserted, it resets only the Flash portion, placing its DQ and RWDS pins in High-Z. HyperRAM remains fully operational and unaffected - its reset path is independent and controlled solely by power sequencing.