Infineon Technologies S72XS256RE0AHBH10

Overview

S72XS256RE0AHBH10 from Cypress Semiconductor is a 256 Mb Multi-Chip Package (MCP) integrating MirrorBit® NOR Flash (16M × 16-bit) and DDR SDRAM (16M × 16-bit) on a single 8.0 × 8.0 mm, 133-ball FBGA substrate. It operates at 1.8 V supply, supports Flash burst speeds up to 108 MHz and DDR DRAM at 166 MHz, and targets wireless handsets requiring compact, low-power nonvolatile + volatile memory co-location.

For engineers reviewing the S72XS256RE0AHBH10 datasheet, S72XS256RE0AHBH10 pinout, S72XS256RE0AHBH10 application, or S72XS256RE0AHBH10 equivalent, key selection criteria include split-bus address/data multiplexing, shared VSS/VCC domains, burst-mode Flash timing, DDR clocking with DQS strobes, and industrial/wireless temperature grading.

Technical Context

This MCP implements a stacked die architecture with independent Flash and DDR DRAM dies sharing a common BGA substrate but operating on separate control buses. Flash uses address-high/address-low/data-multiplexed I/O with AVD#-triggered burst mode; DDR DRAM employs standard JEDEC-compliant command protocol with DQ/DQS bidirectional strobing and CK/CK# differential clocking.

Power domains are partitioned: F-VCC/F-VCCQ for Flash I/O and core, D-VCC/D-VCCQ for DRAM core and I/O, with all VSS balls tied internally to a common ground plane. The device supports electronic serial number (128-bit ESN) in factory-secured silicon and is specified for –25 °C to +85 °C (wireless) or –40 °C to +85 °C (industrial) operation.

Key Specifications

Pinout & Package

Package: 133-ball Fine-Pitch Ball Grid Array (FBGA), 8.0 × 8.0 mm, 0.5 mm pitch (RSC133). Balls marked NC, RFU, or DNU must not be connected per Cypress design guidance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar MCP memory applications.

Compared with MTFC2GMVEA-0M WT and KLMAG2GE4A-A001, S72XS256RE0AHBH10 uniquely delivers raw NOR Flash with burst-mode timing and JEDEC DDR SDRAM on one die stack - essential for real-time boot, deterministic latency, and SoC-level memory controller flexibility.

Availability

S72XS256RE0AHBH10 is available at Aetrix Electronics and suitable for smartphone application processors, wireless modems, industrial telematics gateways, and Wi-Fi 6 IoT edge nodes requiring stable component supply across extended lifecycle programs.

Supply support for S72XS256RE0AHBH10 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor Corporation, now part of Infineon Technologies, designs high-performance, low-power semiconductor solutions for embedded systems, automotive, and industrial markets.

The S72XS-R series was developed specifically for mobile and wireless applications needing tightly integrated, space-efficient Flash + DRAM memory with guaranteed timing behavior and secure identity - addressing limitations of discrete memory layouts in handheld devices.

FAQ

What is the function of F-AVD# and how does it differ from standard address latching?

F-AVD# is an address-valid input that controls Flash burst-mode entry: when low, it signals that ADQ[15:0] contains a valid address, and the first rising edge of F-CLK latches that address and initiates burst read. Unlike static address latching, F-AVD# enables asynchronous address setup relative to CLK, allowing flexible timing alignment in SoC interfaces.

Can the Flash and DRAM portions be accessed simultaneously?

No - the S72XS256RE0AHBH10 uses a split-bus architecture with independent control signals (F-CE# and D-CE#), but the physical ball mapping shares VSS, VCC, and some ground/power balls. Simultaneous access is electrically possible only if the host SoC drives non-overlapping command sequences and manages bus contention; Cypress does not guarantee concurrent operation timing or signal integrity.

Is the 128-bit ESN accessible via standard memory read commands?

No - the ESN resides in a factory-secured silicon area at addresses 000000h–000007h and is only readable through Cypress-specific security-enabled read commands (e.g., using Spansion CFI security extensions). Standard Flash read operations return undefined data; accessing ESN requires host firmware support for Cypress's secure read protocol.

What does "AH" in the part number S72XS256RE0AHBH10 indicate?

"AH" denotes the package and material type: thin-profile fine-pitch BGA, Pb-free and low-halogen compliant, with 0.5 mm ball pitch. It corresponds to the RSC133 mechanical footprint and confirms RoHS/REACH compliance - critical for consumer electronics certifications and lead-free reflow processing.