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Infineon Technologies S72XS256RE0AHBH20

Part No.:
S72XS256RE0AHBH20
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
133-VFBGA
Datasheet:
AetrixS72XS256RE0AHBH20.pdf
Description:
IC FLASH RAM 256MBIT PAR 133FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,966

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Product details

Overview

S72XS256RE0AHBH20 from Cypress Semiconductor is a 256 Mb Multi-Chip Package (MCP) integrating MirrorBit® NOR Flash (16M × 16-bit) and DDR SDRAM (16M × 16-bit) on a single 8.0 × 8.0 mm 133-ball FBGA. It operates at 1.8 V, supports Flash burst speeds up to 108 MHz and DDR DRAM at 166 MHz, and targets wireless handsets requiring compact, low-power nonvolatile + volatile memory co-location.

For engineers reviewing the S72XS256RE0AHBH20 datasheet, S72XS256RE0AHBH20 pinout, S72XS256RE0AHBH20 application, or S72XS256RE0AHBH20 equivalent, key selection criteria include split-bus address/data multiplexing, shared VSS/VCC domains, DDR timing compliance with SDM256D166D1R/D3R, and Flash boot capability in wireless temperature range (–25 °C to +85 °C).

Technical Context

This MCP implements a stacked die architecture with independent Flash and DDR DRAM dies sharing a common BGA substrate. The Flash uses Address-High/Address-Low multiplexed I/O (ADQ15–ADQ0), asynchronous and burst modes, and 65 nm MirrorBit technology. The DDR DRAM supports standard command protocols (RAS#, CAS#, WE#, CKE) with DQS strobing and 16-bit bidirectional data bus (DQ15–DQ0).

Signal routing separates Flash and DRAM control paths: F-CE#/F-OE#/F-WE# and D-CE#/D-RAS#/D-CAS#/D-WE# are physically distinct; clock domains are isolated (F-CLK for Flash, D-CLK/D-CLK# for DDR); power rails are partitioned (F-VCC/F-VCCQ, D-VCC/D-VCCQ) but share ground (VSS). Amax = A12 for DRAM; Flash address mapping ties A15–A0 to DQ15–DQ0 during multiplexed access.

Key Specifications

Parameter Value and Actual Design Meaning
Total Density 256 Mb Flash + 256 Mb DDR DRAM - enables boot code storage and runtime working memory in one footprint.
Flash Interface 16-bit multiplexed ADQ15–ADQ0 - reduces pin count vs. separate address/data buses; requires external address latching via F-AVD#.
DDR Speed 166 MHz DDR clock - supports 332 MT/s data rate; compliant with SDM256D166D1R/D3R specification.
Supply Voltage 1.7 V to 1.95 V - tight 1.8 V nominal rail; requires stable low-noise regulation for both Flash and DRAM sections.
Operating Temp –25 °C to +85 °C (Wireless grade) - qualified for mobile handset ambient conditions, not industrial extended range.
Package 133-ball FBGA, 8.0 × 8.0 mm, 0.5 mm pitch - RSC133 footprint; includes DNU/RFU/NC balls requiring PCB layout exclusion per datasheet guidance.

Pinout & Package

Package: 133-ball Fine-Pitch Ball Grid Array (FBGA), 8.0 × 8.0 mm, RSC133 mechanical outline, Pb-free and low-halogen compliant (AH modifier).

Pin/Terminal Circuit Role Design Meaning
F-CE# Flash Chip Enable Active-low enable for Flash operations; must be asserted before F-OE# or F-WE# to avoid bus contention.
D-CE# DRAM Chip Select Active-low enable for DRAM command decoding; independent of Flash CE#, enabling interleaved access control.
F-CLK / D-CLK / D-CLK# Flash Clock / DDR Clock / DDR Clock Inverted F-CLK drives Flash burst counter; D-CLK/D-CLK# provide DDR double-data-rate timing reference with 180° phase offset.
ADQ15–ADQ0 Flash Address/Data Multiplexed I/O Shared bus for address latching (on F-AVD# rise) and data transfer; requires external demultiplexing logic or controller support.
D-DQ15–D-DQ0 DRAM Data I/O 16-bit bidirectional data path with DQS strobing (D-LDQS/D-UDQS); supports burst lengths of 2, 4, or 8.
VSS Common Ground Shared ground plane for both Flash and DRAM dies; critical for signal integrity and noise coupling control in stacked MCP.

Key Features

Feature Design Value
MirrorBit® Flash Technology 65 nm process enables high-density, low-power NOR Flash with fast random read and reliable program/erase cycling.
Split-Bus Architecture Independent Flash and DRAM control buses prevent command collision and allow concurrent initialization sequences.
Burst Mode Flash Access Up to 108 MHz clocked reads deliver sustained throughput >1.7 Gb/s - accelerates boot code execution from Flash.
DDR SDRAM Compliance Fully compatible with JEDEC-standard DDR commands and timing; supports auto-precharge and programmable burst lengths.
Electronic Serial Number 128-bit factory-programmed ESN stored in secure silicon area (000000h–000007h) - enables device authentication and traceability.

Applications

Smartphone Baseband Boot Wi-Fi Module Firmware Storage

Use Scenario: Mobile baseband processor boots from embedded Flash while loading real-time stack into co-located DRAM.

IC Role / Device Role / Timing Role: Flash provides XIP-capable boot image; DRAM serves as runtime RAM for protocol stacks and buffers.

Use Value: Eliminates discrete memory ICs, reducing PCB area by ~40% and interconnect latency between boot memory and execution RAM.

Use Scenario: Compact Wi-Fi SoC requires integrated firmware storage and packet buffer memory in space-constrained M.2 or mini-PCIe modules.

IC Role / Device Role / Timing Role: Flash stores WLAN driver and calibration tables; DRAM buffers inbound/outbound 802.11 frames.

Use Value: Single-package solution meets 8.0 × 8.0 mm footprint limit while delivering 332 MT/s DRAM bandwidth for high-throughput MAC processing.

GPS Navigation Unit Bluetooth Audio Headset

Use Scenario: Portable GPS receiver loads map tiles and route cache from Flash into DRAM for rapid UI rendering and position updates.

IC Role / Device Role / Timing Role: Flash holds compressed map database; DRAM caches decompressed tile segments and navigation state variables.

Use Value: Enables sub-500 ms map pan response time using burst-mode Flash reads and low-latency DDR random access.

Use Scenario: Ultra-low-power Bluetooth headset stores audio codec firmware and maintains dual-channel audio buffers in volatile memory.

IC Role / Device Role / Timing Role: Flash retains persistent settings and firmware; DRAM hosts real-time A2DP/SCO packet buffers and DSP working memory.

Use Value: Achieves <15 µA standby current (via DRAM self-refresh disable) and supports 24-bit/96 kHz audio processing without external memory expansion.

Equivalent & Alternatives

The following parts are listed as comparable options for similar MCP memory applications.

Alternative Part Technical Difference Application Difference Selection Advice
MT29C1G48MAZABJH-6IT:C 1 Gb NAND + 512 Mb LPDDR2; 1.2 V core; 100-ball FBGA; no NOR Flash or burst mode. Targeted at high-capacity media storage, not XIP boot; lacks Flash random-read performance for instruction fetch. Select only if NAND-based firmware update architecture and LPDDR2 power profile are primary requirements.
S70FL01GSAGMFI010 1 Gb Quad SPI NOR Flash only; no DRAM; SOIC-16 package; 133 MHz max clock; no multiplexed interface. Requires external DRAM for runtime memory; larger footprint; no DDR timing integration or shared ground optimization. Choose when boot reliability and simple interface outweigh need for integrated RAM and space savings.

Compared with MT29C1G48MAZABJH-6IT:C and S70FL01GSAGMFI010, the S72XS256RE0AHBH20 uniquely delivers NOR Flash XIP capability alongside DDR bandwidth in a matched thermal and electrical stack - essential for latency-sensitive boot and real-time embedded applications where discrete memory coordination introduces timing risk.

Availability

S72XS256RE0AHBH20 is available at Aetrix Electronics and suitable for smartphone baseband boot, Wi-Fi module firmware storage, and GPS navigation units requiring stable component supply across product lifecycles.

Supply support for S72XS256RE0AHBH20 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance mixed-signal ICs for embedded systems, with expertise in memory, microcontrollers, and connectivity solutions.

The S72XS-R series was developed specifically for mobile wireless platforms needing tightly coupled Flash+DRAM in minimal footprint, addressing boot latency, power efficiency, and PCB area constraints in 3G/4G handset designs.

FAQ

Does S72XS256RE0AHBH20 support true simultaneous access to Flash and DRAM?

No - the MCP uses a split-bus architecture with independent control signals, but shares VSS and physical substrate; true concurrent read/write requires external arbitration. Flash and DRAM can be initialized and accessed in interleaved sequences, but overlapping active cycles may induce ground bounce or timing skew due to shared power/ground domains.

What is the function of F-VPP pin, and is it required for normal operation?

F-VPP is the Flash programming voltage input. At VIH (typically 1.8 V), it enables accelerated programming and erase; at VIL, it disables all program/erase functions. For standard read-only boot operation, F-VPP must be tied to VCC (VIH) - leaving it floating or pulling low will lock Flash in read-only mode and prevent firmware updates.

How does the ADQ15–ADQ0 multiplexed bus affect controller interface design?

The ADQ15–ADQ0 pins serve as both address inputs (latched on F-AVD# rising edge) and data I/O (during burst or asynchronous reads/writes). The host controller must implement address latching logic or use a processor with built-in Flash controller supporting multiplexed NOR interfaces - standard parallel NOR controllers without ADQ multiplexing support cannot drive this device directly.

Is the ESN (Electronic Serial Number) accessible during normal system operation?

Yes - the 128-bit ESN resides in the Factory Secured Silicon Area at addresses 000000h–000007h and is readable via standard Flash read commands after device power-up and reset. No special unlock sequence is required, but access occurs only through the Flash interface (not DRAM), and the area is write-protected permanently.

S72XS256RE0AHBH20 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
XS-R
Package/Case:
133-VFBGA
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Non-Volatile, Volatile
Memory Format:
FLASH, RAM
Technology:
FLASH, DRAM
Memory Size:
256Mbit (FLASH), 256Mbit (DDR DRAM)
Memory Organization:
-
Memory Interface:
Parallel
Clock Frequency:
108 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.95V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
133-FBGA (8x8)

S72XS256RE0AHBH20 FAQ

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Please submit a Request for Quotation (RFQ) for S72XS256RE0AHBH20 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of S72XS256RE0AHBH20 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for S72XS256RE0AHBH20 is usually 5 days.

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5.How can I obtain technical support or documentation for S72XS256RE0AHBH20?

For technical support, including S72XS256RE0AHBH20 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your S72XS256RE0AHBH20 requirements.

6.How does Aetrix verify that S72XS256RE0AHBH20 is sourced from the original manufacturer or authorized distributors?

All S72XS256RE0AHBH20 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that S72XS256RE0AHBH20 meets industry standards.

7.What is the process for return or replacement of S72XS256RE0AHBH20?

All S72XS256RE0AHBH20 units undergo pre-shipment inspection (PSI). If there is an issue with S72XS256RE0AHBH20, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The S72XS256RE0AHBH20 part is unused and in its original packaging.

Return procedure for S72XS256RE0AHBH20:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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