Infineon Technologies S80KS2562GABHA020

Overview

S80KS2562GABHA020 from Infineon Technologies is a 256 Mb self-refresh DRAM (HYPERRAM™) with HYPERBUS™ interface, operating at 1.8 V. It functions as a pseudo-static RAM (PSRAM) in embedded systems, delivering 400 MBps throughput via DDR transfers on an 8-bit DQ bus synchronized to a 200 MHz single-ended or differential clock. Its 24-ball FBGA package supports industrial and automotive applications including infotainment head units and ADAS domain controllers.

For engineers reviewing the S80KS2562GABHA020 datasheet, S80KS2562GABHA020 pinout, S80KS2562GABHA020 application, or S80KS2562GABHA020 equivalent, key selection criteria include HYPERBUS™ timing compliance, RWDS-driven read/write strobe/mask behavior, partial array refresh configuration, hybrid sleep mode current (1.55 mA), and AEC-Q100 Grade 2 temperature support (–40 °C to +105 °C).

Technical Context

The device implements a HYPERBUS™-compliant DDR interface with command/address/data multiplexed over DQ[7:0], using CK/CK# for edge-aligned capture and RWDS for source-synchronous read strobe or write mask control. Internal refresh logic eliminates host-managed refresh cycles, enabling PSRAM-like simplicity.

It supports configurable burst modes (linear or wrapped: 16–128 bytes), programmable output drive strength, and four power states-interface standby, active clock stop, hybrid sleep, and deep power down (15 μA). Memory array uses 25-nm DRAM technology with partial refresh capability (1/8, 1/4, 1/2, full).

Key Specifications

Pinout & Package

Package: 24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch), RoHS-compliant, suitable for high-density PCB layouts with thermal and signal integrity constraints.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar HYPERRAM™-interface PSRAM applications.

Compared with S27KL0641DPBHI020, S80KS2562GABHA020 delivers double density and +34 MHz clock headroom for future-proofing; versus S80KS1282GABHA020, it doubles buffer space without changing layout or firmware timing margins.

Availability

S80KS2562GABHA020 is available at Aetrix Electronics and suitable for automotive infotainment systems, ADAS domain controllers, and industrial HMI platforms requiring stable component supply, AEC-Q100 qualification, and long-term lifecycle assurance.

Supply support for S80KS2562GABHA020 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D and manufacturing infrastructure.

This device belongs to the HYPERRAM™ family, designed specifically to replace legacy parallel NOR/NAND and SRAM in bandwidth-constrained embedded systems requiring high-density, low-pin-count, and low-power external memory.

FAQ

What is the function of the RWDS signal in read versus write operations?

RWDS serves dual roles: during reads, it acts as a source-synchronous output strobe edge-aligned with DQ data to indicate valid sampling windows; during writes, it functions as an input mask signal-HIGH disables byte write, LOW enables it. This enables precise byte-level write control without additional address decoding logic.

Does S80KS2562GABHA020 require external refresh management?

No. The device integrates autonomous self-refresh logic that schedules DRAM array refreshes during idle periods without host intervention. The host sees a PSRAM-like interface-no refresh commands or timing constraints beyond initial access latency handling are required.

Can this part operate with single-ended clock only, or is differential clock mandatory?

Single-ended clock (CK only) is fully supported and commonly used. Differential clock (CK/CK#) is optional and improves noise immunity in electrically noisy environments like automotive chassis domains-but adds routing complexity and is not required for specification compliance.

How does partial array refresh impact power consumption in real-world use?

When only a subset of memory is actively used-such as firmware code region or static UI assets-configuring partial refresh (e.g., 1/4 array) reduces dynamic refresh current proportionally. At +105 °C, this can cut refresh-related power by up to 75% versus full-array refresh, extending battery life in always-on modules.