Infineon Technologies S80KS2562GABHA023

Overview

S80KS2562GABHA023 from Infineon Technologies is a 256 Mb self-refresh DRAM (HYPERRAM™) with HYPERBUS™ DDR interface, operating at 1.8 V, supporting up to 200 MHz clock rate and 400 MBps data throughput. It features 8-bit DQ bus, bidirectional RWDS strobe, configurable burst lengths (16–128 bytes), and partial/full array refresh - deployed in automotive instrument clusters for high-bandwidth graphics frame buffer expansion.

For engineers reviewing the S80KS2562GABHA023 datasheet, S80KS2562GABHA023 pinout, S80KS2562GABHA023 application, or S80KS2562GABHA023 equivalent, key selection criteria include HYPERBUS™ timing compliance, RWDS-driven latency handling, 24-ball FBGA footprint compatibility, and AEC-Q100 Grade 2 (–40 °C to +105 °C) qualification for automotive infotainment systems.

Technical Context

The S80KS2562GABHA023 implements a pseudo-static RAM architecture using internal self-refresh logic that eliminates host-managed refresh cycles. Its HYPERBUS™ interface uses single-ended or optional differential clocking (CK/CK#), with command/address and data multiplexed over DQ[7:0] in 6-byte CA transfers followed by DDR-aligned data bursts.

RWDS serves three distinct roles: initial latency indicator during CA phase, source-synchronous read strobe during reads, and byte-mask control during writes. Burst behavior supports linear, wrapped (8/16/32/64 clocks), and hybrid modes - enabling deterministic timing for real-time display controllers without external refresh arbitration.

Key Specifications

Pinout & Package

24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch), RoHS-compliant, with 0.4 mm ball diameter. Package supports automated optical inspection and fine-pitch routing on 6-layer automotive PCBs.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar HYPERRAM™-interface PSRAM applications.

Compared with S27KL0641DPBHI020, S80KS2562GABHA023 delivers double bandwidth and flexible burst control for video; versus S80KS1282GABHA023, it doubles capacity for multi-layer UI rendering while retaining identical thermal and timing behavior.

Availability

S80KS2562GABHA023 is available at Aetrix Electronics and suitable for automotive digital instrument clusters, ADAS display processing units, and infotainment head units requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for S80KS2562GABHA023 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D centers and ISO/TS 16949-certified wafer fabs.

This device belongs to Infineon's HYPERRAM™ product line - designed specifically to replace legacy parallel NOR/NAND and low-density LPDDR in automotive and industrial displays where pin count, power, and deterministic timing are critical.

FAQ

What is the function of the RWDS signal in S80KS2562GABHA023?

RWDS is a bidirectional signal serving three roles: (1) indicating initial access latency during command/address transfer, (2) acting as source-synchronous read data strobe during reads (edge-aligned with DQ), and (3) functioning as byte-mask control during writes (HIGH = mask, LOW = write). Its behavior is defined in the HYPERBUS™ specification and requires precise timing alignment in host controller firmware.

Does S80KS2562GABHA023 require external refresh circuitry?

No. The device integrates self-refresh logic that automatically manages DRAM array refresh during idle periods or in hybrid sleep mode. Host processors interact with it as pseudo-static RAM - no refresh commands, timers, or scheduling are required. Refresh occurs transparently and does not interrupt active transactions.

Can S80KS2562GABHA023 operate with single-ended clock only?

Yes. The device supports both single-ended (CK only) and differential (CK/CK#) clock configurations. When using single-ended mode, CK# must be tied to VSS or VCC per datasheet guidance. Differential mode improves noise immunity in high-EMI automotive environments but requires matched trace lengths and termination.

What is the minimum supported burst length and how is it configured?

The minimum burst length is 16 bytes (8 clock cycles), implemented as wrapped burst. Configuration is done via Configuration Register 0 (CR0[1:0]), which selects burst type (linear/wrapped/hybrid) and length (16/32/64/128 bytes). Default power-on value sets 128-byte wrapped burst, and register writes require standard HYPERBUS™ register-write protocol.