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Infineon Technologies S80KS2562GABHB023
- Part No.:
- S80KS2562GABHB023
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 24-VBGA
- Datasheet:
-
S80KS2562GABHB023.pdf
- Description:
- IC PSRAM 256MBIT HYPERBUS 24FBGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,551
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Product details
Overview
S80KS2562GABHB023 from Infineon Technologies is a 256 Mb self-refresh DRAM (HYPERRAM™) with HYPERBUS™ interface, operating at 1.8 V. It delivers 400 MBps data throughput via DDR transfers on an 8-bit DQ bus synchronized to a 200 MHz clock, supports linear/wrapped burst lengths up to 128 bytes, and integrates on-die refresh control for pseudo-static operation in embedded microcontroller systems requiring low-pin-count high-bandwidth memory expansion.
For engineers reviewing the S80KS2562GABHB023 datasheet, S80KS2562GABHB023 pinout, S80KS2562GABHB023 application, or S80KS2562GABHB023 equivalent, key selection criteria include HYPERBUS™ timing compliance (tACC ≤ 35 ns), RWDS-driven read/write strobe/mask functionality, configurable hybrid sleep and deep power-down modes, and FBGA-24 package compatibility with industrial (–40 °C to +85 °C) and automotive AEC-Q100 Grade 2 (–40 °C to +105 °C) requirements.
Technical Context
The S80KS2562GABHB023 implements a HYPERBUS™-compliant DDR interface with bidirectional RWDS used as both initial latency indicator and source-synchronous read strobe/write mask signal. Command/address and data share the same 8-bit DQ[7:0] bus, with six CA bytes transferred per transaction under CK/CK# edge alignment.
Its internal architecture includes self-refresh logic that autonomously manages DRAM array refresh without host intervention, enabling PSRAM-like behavior. Burst configurations support linear, wrapped (16/32/64/128-byte), and hybrid (wrapped + linear) modes, with output drive strength and partial array refresh (1/8, 1/4, 1/2) programmable via configuration registers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory density | 256 Mb (32 MB), organized as 4,194,304 × 64-bit for efficient sequential access in MCU-based graphics or firmware buffers. |
| Interface standard | HYPERRAM™ with HYPERBUS™ DDR protocol - 11–12 signal count (CS#, CK/CK#, RWDS, DQ[7:0]), reducing PCB routing complexity vs parallel NOR/NAND. |
| Max clock rate | 200 MHz - enables 400 MBps peak bandwidth (2 × 200 MHz × 8-bit) with strict tACC ≤ 35 ns timing for deterministic real-time response. |
| Burst length | Configurable wrapped bursts: 16/32/64/128 bytes - matches typical cache line or display buffer segment sizes without software overhead. |
| Power modes | Hybrid sleep (low-latency wake) and deep power down (15 μA @ 105 °C) - critical for battery-powered IoT edge nodes with intermittent memory access. |
| Operating temperature | AEC-Q100 Grade 2 (–40 °C to +105 °C) - qualified for under-hood automotive ECUs and industrial motor drives with thermal cycling resilience. |
| Package | 24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch) - surface-mount compatible with automated assembly and thermal performance suitable for dense SoC companion memory placement. |
Pinout & Package
24-ball Fine-Pitch Ball Grid Array (FBGA) package with 5 mm × 5 mm footprint and 0.8 mm ball pitch, optimized for high-density PCB layouts and thermal dissipation in space-constrained embedded applications.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CS# | Chip Select (active-low) | Asserted to initiate all HYPERBUS™ transactions; deassertion terminates burst and places device in standby. |
| CK / CK# | Differential clock inputs | Edge-aligned sampling of command/address/data on DQ; optional single-ended CK mode reduces routing complexity. |
| RWDS | Bidirectional read-write data strobe | Indicates refresh latency at start of transaction; serves as read strobe (edge-aligned) or write mask (HIGH = masked byte). |
| DQ[7:0] | Bi-directional data/command/address bus | Time-multiplexed 8-bit lane carrying CA bytes (6×), read data, and write data - eliminates separate address bus pins. |
| RESET# | Hardware reset input (active-low) | Forces device into known state and clears internal registers; required before initialization sequence. |
Key Features
| Feature | Design Value |
|---|---|
| Self-refresh DRAM core | On-die refresh controller eliminates host CPU overhead and timing-critical refresh scheduling - enables true PSRAM drop-in replacement. |
| HYPERBUS™ interface | 11–12 signal count DDR interface achieves NOR flash-like simplicity with DRAM bandwidth - reduces PCB layer count and EMI compared to parallel interfaces. |
| Configurable burst modes | Linear, wrapped (16/32/64/128-byte), and hybrid bursts allow optimal alignment with MCU cache lines, display frame buffers, or audio sample blocks. |
| RWDS dual-role signaling | Single pin provides both initial latency indication and per-byte write masking - simplifies timing analysis and enables byte-granular writes without external logic. |
| Partial array refresh | Refresh only 1/8, 1/4, or 1/2 of memory array during idle periods - cuts active current by up to 75% versus full-array refresh in low-duty-cycle applications. |
Applications
| Automotive Instrument Clusters | Industrial HMI Displays |
|---|---|
Use Scenario: Real-time rendering of vector-based gauges and animated alerts in digital dashboards with <100 ms UI update latency. IC Role / Device Role / Timing Role: High-bandwidth frame buffer memory interfaced directly to MCU's HYPERBUS™ controller, eliminating external SDRAM PHY complexity. Use Value: 400 MBps throughput sustains 1280×720@60 Hz RGB565 display refresh while maintaining <500 μs worst-case read latency for pointer updates. |
Use Scenario: Local storage of GUI assets (icons, fonts, bitmaps) and runtime widget state in factory-floor HMIs with intermittent network connectivity. IC Role / Device Role / Timing Role: Non-volatile-equivalent memory mapped into MCU's XIP space, accessed via burst reads with predictable 35 ns tACC. Use Value: Wrapped 64-byte bursts align precisely with compressed asset chunks, reducing bus occupancy by 40% versus fixed-length NOR flash reads. |
| Edge AI Sensor Aggregators | Medical Portable Monitors |
Use Scenario: Buffering multi-channel time-series sensor data (ECG, SpO₂, temperature) prior to on-device ML inference on Cortex-M7/M33. IC Role / Device Role / Timing Role: Low-power streaming memory supporting continuous 16-bit × 4-channel @ 10 kHz sampling with minimal CPU intervention. Use Value: Deep power-down mode draws only 15 μA between 10-ms acquisition windows, extending battery life beyond 72 hours on 2000 mAh Li-ion. |
Use Scenario: Storing high-resolution waveform history (12-bit ADC @ 1 MS/s) and alarm-triggered snapshots in portable patient monitors. IC Role / Device Role / Timing Role: Deterministic latency memory enabling glitch-free waveform scrolling and instant recall of last 30 seconds of data. Use Value: Hybrid sleep mode allows sub-10 μs wake-to-access latency after button press, meeting IEC 60601-1 response time requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed serial DRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Cypress S27KL0641DPBHI020 | 64 Mb density, same HYPERBUS™ interface, but lower max clock (166 MHz) and no differential CK option. | Limited to mid-bandwidth applications like basic GUI caching; insufficient for 720p video buffering. | Select when cost sensitivity outweighs bandwidth needs and board layout constraints permit larger timing margins. |
| Infineon S80KS1282GABHB023 | 128 Mb density, identical package, timing, and feature set - differs only in memory capacity and part number suffix. | Same use cases but constrained to smaller frame buffers or shorter waveform histories. | Choose for BOM rationalization where 128 Mb suffices and inventory consolidation is prioritized over future-proofing. |
Compared with S27KL0641DPBHI020, the S80KS2562GABHB023 delivers 4× more memory and 20% higher bandwidth for real-time imaging; versus S80KS1282GABHB023, it doubles capacity without changing footprint or power profile - enabling longer data logging or higher-resolution displays within identical thermal and layout constraints.
Availability
S80KS2562GABHB023 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial HMI displays, and edge AI sensor aggregators requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for S80KS2562GABHB023 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D and manufacturing infrastructure.
The HYPERRAM™ product line targets MCU-based embedded systems needing high-speed, low-pin-count memory expansion - designed to replace parallel NOR/NAND and legacy PSRAM while simplifying PCB design and reducing system-level timing complexity.
FAQ
Does S80KS2562GABHB023 require external refresh circuitry?
No. The device integrates self-refresh logic that autonomously manages DRAM array refresh during idle periods without host CPU involvement. Host only needs to observe maximum burst length limits (e.g., ≤128 bytes) to ensure sufficient idle time for internal refresh cycles. This enables PSRAM-like usage with no refresh-related firmware overhead or timing constraints.
What is the function of the RWDS pin during write operations?
During write transactions, RWDS acts as a per-byte write mask: when HIGH, the corresponding DQ[7:0] byte is ignored and not written to memory; when LOW, the byte is valid and stored. This enables unaligned multi-byte writes (e.g., 3-byte packet) without read-modify-write cycles, preserving data integrity in interrupt-driven buffer management.
Can S80KS2562GABHB023 operate with single-ended clock only?
Yes. The device supports both differential (CK/CK#) and single-ended (CK only) clock modes. In single-ended mode, CK# is left unconnected or tied to VSS, reducing PCB routing complexity. Timing specifications remain identical, but jitter tolerance is slightly reduced - acceptable for most industrial and automotive applications with clean clock sources.
How does partial array refresh reduce power consumption?
Partial array refresh activates refresh operations on only a fraction (1/8, 1/4, or 1/2) of the DRAM array during each refresh cycle, proportionally lowering active current draw. For example, 1/4 refresh cuts refresh-related current by ~75% versus full-array refresh, directly extending battery life in duty-cycled sensor applications without compromising data retention.
S80KS2562GABHB023 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HYPERRAM™
- Package/Case:
- 24-VBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- PSRAM
- Technology:
- PSRAM (Pseudo SRAM)
- Memory Size:
- 256Mbit
- Memory Organization:
- 32M x 8
- Memory Interface:
- HyperBus
- Clock Frequency:
- 200 MHz
- Write Cycle Time - Word, Page:
- 35ns
- Access Time:
- 35 ns
- Voltage - Supply:
- 1.7V ~ 2V
- Operating Temperature:
- -40°C ~ 105°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 24-FBGA (6x8)
S80KS2562GABHB023 FAQ
1.How can I place an order for S80KS2562GABHB023 through Aetrix?
Please submit a Request for Quotation (RFQ) for S80KS2562GABHB023 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for S80KS2562GABHB023 reliable?
The price and inventory of S80KS2562GABHB023 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for S80KS2562GABHB023 is usually 5 days.
3.What payment methods are accepted for S80KS2562GABHB023?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for S80KS2562GABHB023 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for S80KS2562GABHB023?
S80KS2562GABHB023 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your S80KS2562GABHB023 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for S80KS2562GABHB023?
For technical support, including S80KS2562GABHB023 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your S80KS2562GABHB023 requirements.
6.How does Aetrix verify that S80KS2562GABHB023 is sourced from the original manufacturer or authorized distributors?
All S80KS2562GABHB023 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that S80KS2562GABHB023 meets industry standards.
7.What is the process for return or replacement of S80KS2562GABHB023?
All S80KS2562GABHB023 units undergo pre-shipment inspection (PSI). If there is an issue with S80KS2562GABHB023, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The S80KS2562GABHB023 part is unused and in its original packaging.
Return procedure for S80KS2562GABHB023:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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