Infineon Technologies S80KS2562GABHB023

Overview

S80KS2562GABHB023 from Infineon Technologies is a 256 Mb self-refresh DRAM (HYPERRAM™) with HYPERBUS™ interface, operating at 1.8 V. It delivers 400 MBps data throughput via DDR transfers on an 8-bit DQ bus synchronized to a 200 MHz clock, supports linear/wrapped burst lengths up to 128 bytes, and integrates on-die refresh control for pseudo-static operation in embedded microcontroller systems requiring low-pin-count high-bandwidth memory expansion.

For engineers reviewing the S80KS2562GABHB023 datasheet, S80KS2562GABHB023 pinout, S80KS2562GABHB023 application, or S80KS2562GABHB023 equivalent, key selection criteria include HYPERBUS™ timing compliance (tACC ≤ 35 ns), RWDS-driven read/write strobe/mask functionality, configurable hybrid sleep and deep power-down modes, and FBGA-24 package compatibility with industrial (–40 °C to +85 °C) and automotive AEC-Q100 Grade 2 (–40 °C to +105 °C) requirements.

Technical Context

The S80KS2562GABHB023 implements a HYPERBUS™-compliant DDR interface with bidirectional RWDS used as both initial latency indicator and source-synchronous read strobe/write mask signal. Command/address and data share the same 8-bit DQ[7:0] bus, with six CA bytes transferred per transaction under CK/CK# edge alignment.

Its internal architecture includes self-refresh logic that autonomously manages DRAM array refresh without host intervention, enabling PSRAM-like behavior. Burst configurations support linear, wrapped (16/32/64/128-byte), and hybrid (wrapped + linear) modes, with output drive strength and partial array refresh (1/8, 1/4, 1/2) programmable via configuration registers.

Key Specifications

Pinout & Package

24-ball Fine-Pitch Ball Grid Array (FBGA) package with 5 mm × 5 mm footprint and 0.8 mm ball pitch, optimized for high-density PCB layouts and thermal dissipation in space-constrained embedded applications.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed serial DRAM applications.

Compared with S27KL0641DPBHI020, the S80KS2562GABHB023 delivers 4× more memory and 20% higher bandwidth for real-time imaging; versus S80KS1282GABHB023, it doubles capacity without changing footprint or power profile - enabling longer data logging or higher-resolution displays within identical thermal and layout constraints.

Availability

S80KS2562GABHB023 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial HMI displays, and edge AI sensor aggregators requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for S80KS2562GABHB023 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D and manufacturing infrastructure.

The HYPERRAM™ product line targets MCU-based embedded systems needing high-speed, low-pin-count memory expansion - designed to replace parallel NOR/NAND and legacy PSRAM while simplifying PCB design and reducing system-level timing complexity.

FAQ

Does S80KS2562GABHB023 require external refresh circuitry?

No. The device integrates self-refresh logic that autonomously manages DRAM array refresh during idle periods without host CPU involvement. Host only needs to observe maximum burst length limits (e.g., ≤128 bytes) to ensure sufficient idle time for internal refresh cycles. This enables PSRAM-like usage with no refresh-related firmware overhead or timing constraints.

What is the function of the RWDS pin during write operations?

During write transactions, RWDS acts as a per-byte write mask: when HIGH, the corresponding DQ[7:0] byte is ignored and not written to memory; when LOW, the byte is valid and stored. This enables unaligned multi-byte writes (e.g., 3-byte packet) without read-modify-write cycles, preserving data integrity in interrupt-driven buffer management.

Can S80KS2562GABHB023 operate with single-ended clock only?

Yes. The device supports both differential (CK/CK#) and single-ended (CK only) clock modes. In single-ended mode, CK# is left unconnected or tied to VSS, reducing PCB routing complexity. Timing specifications remain identical, but jitter tolerance is slightly reduced - acceptable for most industrial and automotive applications with clean clock sources.

How does partial array refresh reduce power consumption?

Partial array refresh activates refresh operations on only a fraction (1/8, 1/4, or 1/2) of the DRAM array during each refresh cycle, proportionally lowering active current draw. For example, 1/4 refresh cuts refresh-related current by ~75% versus full-array refresh, directly extending battery life in duty-cycled sensor applications without compromising data retention.