Infineon Technologies S80KS2562GABHI023

Overview

S80KS2562GABHI023 from Infineon Technologies is a 256 Mb self-refresh DRAM (HYPERRAM™) with HYPERBUS™ DDR interface, operating at 1.8 V, supporting 200 MHz clock rate, 400 MBps data throughput, and 24-ball FBGA package for industrial temperature range (–40 °C to +85 °C). It functions as pseudo-static RAM in embedded systems requiring high-bandwidth, low-pin-count memory expansion.

For engineers reviewing the S80KS2562GABHI023 datasheet, S80KS2562GABHI023 pinout, S80KS2562GABHI023 application, or S80KS2562GABHI023 equivalent, key selection criteria include HYPERBUS™ timing compliance, RWDS-driven read/write strobe behavior, burst configuration flexibility (linear/wrapped/hybrid), partial array refresh support, and deep power-down current (15 μA @ 105 °C).

Technical Context

The S80KS2562GABHI023 implements a self-refresh DRAM core with integrated refresh control logic, eliminating host-managed refresh cycles. Its HYPERBUS™ interface uses an 8-bit bidirectional DQ bus with source-synchronous RWDS for read strobe and write mask, and supports both single-ended (CK) and optional differential (CK/CK#) clocking.

Command/address and data share the same DQ[7:0] lines in time-multiplexed fashion; transactions begin with six CA bytes followed by configurable initial access latency (1× or 2× count), and support wrapped burst lengths of 16–128 bytes or hybrid burst modes for optimized memory access efficiency.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch), RoHS-compliant, suitable for high-density PCB layouts with thermal and signal integrity constraints.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed, low-pin-count PSRAM applications.

Compared with CY15B104QN-PSOC and IS66WV51216EBLL-15BLI, the S80KS2562GABHI023 uniquely balances 256 Mb density, 400 MBps DDR throughput, and ultra-low deep power down - making it the only viable option for modern MCU-based edge devices needing scalable, low-pin-count PSRAM.

Availability

S80KS2562GABHI023 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial HMI displays, and edge AI sensor gateways requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for S80KS2562GABHI023 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensing, and memory solutions for automotive, industrial, and IoT markets.

The HYPERRAM™ product line targets memory-constrained embedded systems needing high-bandwidth, low-pin-count PSRAM alternatives to legacy parallel SRAM and NOR flash.

FAQ

What is the role of the RWDS signal in read versus write operations?

RWDS serves dual roles: during reads, it acts as a source-synchronous strobe aligned with DQ data edges; during writes, it functions as a per-byte mask (HIGH = masked, LOW = written). This eliminates need for separate write-enable or byte-lane control signals, simplifying interface design while enabling precise byte-level write control.

Does the S80KS2562GABHI023 require external refresh circuitry?

No. The device integrates self-refresh logic that autonomously manages DRAM array refresh during idle periods. Host processors interact with it as pseudo-static RAM - no refresh commands, timers, or scheduling are required, reducing firmware complexity and CPU overhead.

How does burst length configuration affect system performance?

Burst length (16–128 bytes) directly impacts bus utilization and latency hiding. Shorter bursts reduce initial access delay but increase transaction overhead; longer bursts improve throughput for sequential access but may stall host if interrupted. Hybrid mode (wrapped + linear) optimizes for cache-line-aligned accesses common in ARM-based SoCs.

Can the S80KS2562GABHI023 operate with single-ended clock only?

Yes. The device supports single-ended CK input by default. CK# is optional and used only when differential clocking is implemented for improved noise immunity in electrically noisy environments. No hardware modification or configuration register change is needed to use single-ended mode.