Infineon Technologies S80KS2562GABHM020

Overview

S80KS2562GABHM020 from Infineon is a 256 Mb self-refresh DRAM (HYPERRAM™) with HYPERBUS™ interface, operating at 1.8 V. It delivers 400 MBps throughput via DDR transfers on an 8-bit DQ bus synchronized to a 200 MHz single-ended or differential clock, and integrates on-die refresh control to emulate PSRAM behavior in microcontroller-based embedded systems requiring high-density, low-pin-count external memory.

For engineers reviewing the S80KS2562GABHM020 datasheet, S80KS2562GABHM020 pinout, S80KS2562GABHM020 application, or S80KS2562GABHM020 equivalent, key selection factors include HYPERBUS™ timing compliance (tACC ≤ 35 ns), configurable burst lengths (16–128 bytes), hybrid sleep/deep power-down modes (15 μA at 105 °C), and AEC-Q100 Grade 2 qualification for automotive infotainment and ADAS host memory expansion.

Technical Context

The S80KS2562GABHM020 implements a pseudo-static RAM architecture using 25-nm DRAM cells with integrated self-refresh logic, eliminating host-managed refresh cycles. Its HYPERBUS™ interface uses command/address/data multiplexing over DQ[7:0], with RWDS serving as bidirectional strobe/mask signal and CK/CK# providing source-synchronous capture timing.

Transaction execution follows a fixed six-byte CA transfer phase followed by programmable initial access latency (1× or 2× count), then DDR-aligned read/write data bursts. Internal logic enforces burst-length limits (max 128 bytes) to guarantee periodic array refresh without interrupting host operations.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch), RoHS-compliant, suitable for automated SMT assembly in space-constrained modules.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed, low-pin-count external memory applications.

Compared with CY15B104QN-SXIT and IS66WV12816EBLL-100B1, the S80KS2562GABHM020 uniquely balances 256 Mb density, 400 MBps bandwidth, and ultra-low deep-power current (15 μA) within a 24-ball footprint-making it optimal for next-gen automotive and industrial edge devices where pin count, thermal margin, and memory scalability are co-constrained.

Availability

S80KS2562GABHM020 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial HMIs, edge AI accelerators, and medical imaging preview systems requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for S80KS2562GABHM020 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive ICs, and memory solutions, with global manufacturing and quality certifications including IATF 16949 and ISO 9001.

The HYPERRAM™ product line targets MCU- and MPU-based embedded systems needing high-density, low-pin-count external memory with PSRAM-like simplicity and DRAM-like economics-optimized for automotive, industrial, and IoT edge applications.

FAQ

What is the function of the RWDS signal in S80KS2562GABHM020?

RWDS serves three distinct roles: (1) output indicating initial access latency count before read data begins; (2) source-synchronous read data strobe aligned to DQ edges during reads; and (3) input write mask signal (HIGH = byte masked, LOW = byte written) during write bursts. Its bidirectional behavior is controlled automatically by internal state machine based on transaction type and phase.

Does S80KS2562GABHM020 require external refresh circuitry?

No. The device contains fully autonomous self-refresh logic that manages DRAM array refresh without host intervention. The host sees only a PSRAM-like interface-no refresh commands, timers, or scheduling are required. Refresh occurs transparently during idle periods or within allowed burst gaps, enforced by internal timing constraints.

Can S80KS2562GABHM020 operate with a single-ended clock only?

Yes. The device supports both single-ended (CK only) and differential (CK/CK#) clock configurations. When using single-ended mode, CK# must be tied to VSS or VCC per datasheet guidance. All timing specifications-including tACC ≤ 35 ns and 200 MHz maximum rate-are guaranteed under single-ended operation with proper signal integrity.

What package variant does S80KS2562GABHM020 use, and is it lead-free?

S80KS2562GABHM020 uses a 24-ball FBGA package (5 mm × 5 mm, 0.8 mm pitch) with RoHS-compliant, lead-free terminations. The ball map matches JEDEC MO-276AA standard, and the package is qualified for reflow soldering per IPC/JEDEC J-STD-020 moisture sensitivity level 3 (MSL-3).