Infineon Technologies S80KS2562GABHM023

Overview

S80KS2562GABHM023 from Infineon is a 256 Mb self-refresh DRAM (HYPERRAM™) with HYPERBUS™ interface, operating at 1.8 V. It delivers 400 MBps throughput via DDR transfers on an 8-bit DQ bus synchronized to a 200 MHz single-ended or differential clock, features configurable burst lengths (16–128 bytes), and supports partial array refresh for low-power embedded memory expansion in microcontroller-based systems.

For engineers reviewing the S80KS2562GABHM023 datasheet, S80KS2562GABHM023 pinout, S80KS2562GABHM023 application, or S80KS2562GABHM023 equivalent, key selection criteria include HYPERBUS™ timing compliance, RWDS-driven read/write strobe/mask behavior, burst configuration register settings, and industrial temperature support (–40 °C to +85 °C) in 24-ball FBGA packaging.

Technical Context

The device implements a pseudo-static RAM architecture using internal self-refresh logic that eliminates host-managed refresh cycles. Its HYPERBUS™ interface uses command/address/data multiplexing over DQ[7:0], with RWDS serving dual roles: as a latency-indicating output during CA transfer and as a source-synchronous read strobe or write mask input during data phases.

Timing is governed by initial access latency (tACC = 35 ns max), DDR clock edge alignment for DQ transfers, and center-aligned command/address capture relative to CK/CK#. The memory supports hybrid sleep and deep power-down modes, with standby current as low as 1.55 mA at 105 °C and deep power-down current of 15 μA.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch), RoHS-compliant, moisture sensitivity level 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed serial DRAM applications.

Compared with CY15B104QN-PSOC and IS66WV51216EBLL-100BLI, S80KS2562GABHM023 uniquely balances high density (256 Mb), DDR bandwidth (400 MBps), and low pin count (12 signals) while maintaining MCU-friendly self-refresh behavior - making it optimal for next-gen resource-constrained edge devices requiring scalable external memory.

Availability

S80KS2562GABHM023 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial HMI controllers, edge AI sensor nodes, and medical portable monitors requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for S80KS2562GABHM023 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D and manufacturing infrastructure.

S80KS2562GABHM023 belongs to the HYPERRAM™ product line, designed specifically to replace parallel PSRAM and NOR flash in MCU-based systems where high bandwidth, low pin count, and simplified memory management are critical.

FAQ

What is the function of the RWDS pin in read versus write operations?

RWDS serves three distinct roles: during command/address transfer, it outputs refresh latency indication; during reads, it acts as a source-synchronous read data strobe edge-aligned with DQ; during writes, it functions as a byte-level write mask - HIGH disables the corresponding DQ byte, LOW enables it. This dual-mode behavior is intrinsic to HYPERBUS™ protocol timing and must be implemented in host controller firmware.

Does S80KS2562GABHM023 require external refresh commands from the host MCU?

No. The device contains fully autonomous self-refresh logic that manages DRAM array refresh internally without host intervention. The host sees pseudo-static behavior - no refresh cycles, timers, or scheduling are required. However, the host must respect initial access latency signaled via RWDS and limit burst duration to allow internal refresh windows between transactions.

Can the burst length be changed dynamically during operation?

Yes. Burst length is configured via Configuration Register 0 (CR0), which is accessible through HYPERBUS™ register read/write commands. The host can modify CR0 at runtime to switch between wrapped burst lengths (16/32/64/128 bytes) or enable hybrid burst mode. Changes take effect on the next transaction after register write completion and CS# deassertion.

What is the significance of separate VCC and VCCQ supplies?

VCC powers the DRAM array core (25-nm process), while VCCQ powers the I/O buffers and HYPERBUS™ interface logic. Separating these supplies allows independent voltage optimization: VCC can be tuned for array stability, while VCCQ can be set for signal integrity on DQ/RWDS lines. Both are specified at 1.8 V ±0.1 V, but decoupling improves noise immunity and meets JEDEC JESD8-12E requirements for mixed-signal memory devices.