Infineon Technologies S80KS2562GABHV020

Overview

S80KS2562GABHV020 from Infineon Technologies is a 256 Mb self-refresh DRAM (HYPERRAM™) with HYPERBUS™ interface, operating at 1.8 V. It delivers 400 MBps throughput via DDR transfers on an 8-bit DQ bus synchronized to a 200 MHz single-ended or differential clock, and integrates on-die refresh control to emulate PSRAM behavior in microcontroller-based embedded systems requiring low-pin-count high-bandwidth memory expansion.

For engineers reviewing the S80KS2562GABHV020 datasheet, S80KS2562GABHV020 pinout, S80KS2562GABHV020 application, or S80KS2562GABHV020 equivalent, key selection considerations include HYPERBUS™ timing compliance (tACC ≤ 35 ns), configurable burst modes (16–128 bytes), hybrid sleep/deep power-down current (1.55 mA / 15 µA at 105 °C), and AEC-Q100 Grade 2 qualification for automotive infotainment and ADAS domain controllers.

Technical Context

The S80KS2562GABHV020 implements a HYPERBUS™-compliant DDR interface with bidirectional RWDS used as both initial latency indicator and source-synchronous read strobe/write mask signal. Its internal logic decouples host transaction scheduling from DRAM refresh management, enabling pseudo-static access semantics without external refresh commands.

It supports linear and wrapped burst lengths (16/32/64/128 bytes), hybrid burst mode (wrapped + linear), and configurable output drive strength. Memory array refresh is partitionable (1/8, 1/4, 1/2, full), and power states include interface standby, active clock stop, hybrid sleep, and deep power down - all entered and exited via register-controlled commands over the same DQ bus.

Key Specifications

Pinout & Package

24-ball FBGA package (5 mm × 5 mm, 0.8 mm pitch), RoHS-compliant, with 1.8 V VCC/VCCQ supply separation for array and I/O domains.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed low-pin-count DRAM applications.

Compared with S27KL0641DPBHI020, S80KS2562GABHV020 provides 4× density and 20% higher bandwidth with advanced power gating; versus S80KS1282GABHV020, it doubles capacity while maintaining identical footprint, timing, and qualification - making it optimal for next-gen automotive and industrial edge nodes demanding scalable memory.

Availability

S80KS2562GABHV020 is available at Aetrix Electronics and suitable for automotive instrument clusters, ADAS domain controllers, and industrial HMI panels requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for S80KS2562GABHV020 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive ICs, and memory solutions, with global manufacturing and quality certification aligned to ISO/TS 16949 and IATF 16949.

The HYPERRAM™ product line targets embedded systems needing high-speed, low-pin-count memory expansion - specifically designed to replace parallel NOR/NAND and legacy PSRAM in automotive, industrial, and IoT edge devices where board space and signal integrity are constrained.

FAQ

What is the minimum required initial access latency for read transactions?

The S80KS2562GABHV020 uses RWDS to indicate initial latency count: HIGH indicates 2× latency, LOW indicates 1× latency. Minimum latency is one clock cycle, but actual value depends on internal refresh status and is dynamically signaled at transaction start - host must sample RWDS during CA transfer to determine exact count before data phase begins.

Does this device require external refresh circuitry or controller support?

No. The S80KS2562GABHV020 contains fully autonomous self-refresh logic that manages all DRAM row activation and precharge cycles internally. The host only issues standard HYPERBUS™ commands; no refresh registers, timers, or scheduling routines are needed in firmware or hardware.

Can RWDS be used as a reliable read data strobe in synchronous capture designs?

Yes. During read transactions, RWDS is driven edge-aligned with valid DQ data by the S80KS2562GABHV020, meeting source-synchronous timing requirements. Its jitter and skew are characterized in the datasheet (tJIT and tSKO specs), enabling robust FPGA or MCU input capture using RWDS as the sampling clock for DQ[7:0].

How does hybrid sleep mode differ from deep power down in terms of wake-up time and data retention?

Hybrid sleep retains full memory contents with 1.55 mA typical current draw and sub-1 µs wake-up latency; deep power down reduces current to 15 µA but requires ~100 µs initialization and full array refresh before first access. Hybrid sleep is preferred for frequent low-power transitions; deep power down suits extended idle periods like vehicle ignition-off states.