Infineon Technologies S80KS2562GABHV023

Overview

S80KS2562GABHV023 from Infineon Technologies is a 256 Mb self-refresh DRAM (HYPERRAM™) with HYPERBUS™ DDR interface, operating at 1.8 V, supporting up to 200 MHz clock rate and 400 MBps data throughput. It features 8-bit DQ bus, bidirectional RWDS strobe/mask, configurable burst lengths (16–128 bytes), and industrial-plus temperature range (–40 °C to +105 °C). Used in embedded microcontroller systems requiring high-bandwidth, low-pin-count external memory expansion.

For engineers reviewing the S80KS2562GABHV023 datasheet, S80KS2562GABHV023 pinout, S80KS2562GABHV023 application, or S80KS2562GABHV023 equivalent, key selection criteria include HYPERBUS™ timing compliance, RWDS-driven latency handling, partial array refresh configuration, and FBGA-24 thermal performance under sustained burst reads.

Technical Context

This device implements a pseudo-static RAM architecture using internal self-refresh logic to eliminate host-managed refresh cycles. Its HYPERBUS™ interface uses single-ended or optional differential clocking (CK/CK#), with all command/address/data multiplexed over DQ[7:0] and synchronized via RWDS for read strobing and write masking.

The memory supports linear and wrapped burst modes, hybrid burst (wrapped + linear), and four programmable output drive strengths. Power management includes hybrid sleep mode (1.55 mA @ 105 °C) and deep power down (15 μA @ 105 °C), with partial array refresh (1/8, 1/4, 1/2) configurable via registers.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch), RoHS-compliant, moisture sensitivity level 3 (MSL3).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth, low-pin-count external memory applications.

Compared with CY15B104QN-PSOC and IS66WV51216EBLL-15BLI, S80KS2562GABHV023 delivers 7.4× higher bandwidth than the FRAM and 49× more density than the SRAM, while using 62% fewer pins than the parallel SRAM and eliminating refresh management required by standard DRAM.

Availability

S80KS2562GABHV023 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial HMI displays, edge AI sensor gateways, and medical diagnostic terminals requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for S80KS2562GABHV023 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensing, connectivity, and memory solutions for automotive, industrial, and IoT markets.

S80KS2562GABHV023 belongs to the HYPERRAM™ product line, designed specifically to replace parallel NOR/NAND and low-density SRAM in resource-constrained embedded systems needing high-speed, low-pin-count external memory.

FAQ

What is the function of the RWDS signal in S80KS2562GABHV023?

RWDS serves three distinct roles: (1) output indicating initial access latency before read data begins; (2) source-synchronous read data strobe aligned with DQ transitions; and (3) input for write data masking (HIGH = mask, LOW = valid). This dual-direction functionality replaces separate RD/WR strobes and enables precise timing control without additional pins.

Does S80KS2562GABHV023 require external refresh circuitry?

No. The device integrates self-refresh logic that autonomously manages DRAM array refresh during idle periods. The host processor sees it as pseudo-static RAM (PSRAM) and does not need to issue refresh commands or track refresh intervals - simplifying software and reducing CPU overhead.

Can S80KS2562GABHV023 operate with single-ended clock only?

Yes. The device supports both single-ended (CK only, CK# tied to VSS) and differential (CK/CK#) clock configurations. Single-ended mode reduces routing complexity and is fully compliant with HYPERBUS™ timing specifications at up to 200 MHz, provided board-level signal integrity meets tACCL/tACCH setup/hold requirements.

What package variant does S80KS2562GABHV023 use, and is it lead-free?

S80KS2562GABHV023 uses a 24-ball FBGA package (5 mm × 5 mm, 0.8 mm pitch) with lead-free (Pb-free) terminations and RoHS compliance. The ball map includes four dedicated VSS balls for grounding integrity, and the package is rated MSL3 - requiring bake conditioning if exposed to ambient humidity beyond floor life limits.