Infineon Technologies S80KS2563GABHA020

Overview

S80KS2563GABHA020 from Infineon Technologies is a 256 Mb self-refresh DRAM (HYPERRAM™) with Octal xSPI interface, operating at 1.8 V, supporting DDR transfers up to 200 MHz, delivering 400 MBps throughput, and featuring configurable burst lengths (16–128 bytes), partial array refresh, and industrial-plus temperature range (–40 °C to +105 °C) in a 24-ball FBGA package - used as high-bandwidth, low-pin-count external memory for microcontroller-based edge AI inference accelerators.

For engineers reviewing the S80KS2563GABHA020 datasheet, S80KS2563GABHA020 pinout, S80KS2563GABHA020 application, or S80KS2563GABHA020 equivalent, key selection criteria include xSPI command compatibility, RWDS timing behavior during refresh latency indication, burst-length configuration register settings, deep power-down current (15 µA at 105 °C), and FBGA-24 mechanical footprint alignment with host SoC layout constraints.

Technical Context

This device implements a pseudo-static RAM architecture using 25-nm DRAM cells with on-die self-refresh logic, eliminating host-managed refresh cycles. Its xSPI interface uses 11–12 signal lines (including optional CK#/CS#/RWDS/DQ[7:0]) and supports both linear and wrapped burst modes with hybrid burst option.

The memory controller integrates configurable output drive strength, programmable tACC (35 ns max), and four power states: interface standby, active clock stop, hybrid sleep, and deep power down - enabling dynamic power scaling in battery-constrained embedded systems without sacrificing bandwidth.

Key Specifications

Pinout & Package

24-ball Fine-Pitch Ball Grid Array (FBGA), 5 mm × 5 mm, 0.5 mm pitch, RoHS-compliant, bottom-side thermal pad not present. Package meets JEDEC MO-270CA standard.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed, low-pin-count external memory applications.

Compared with S27KL0641DPBHI020 and W9825G6JH-6I, the S80KS2563GABHA020 uniquely balances DRAM-level bandwidth with NOR-like simplicity-offering 4× the throughput of Quad SPI Flash and eliminating host refresh logic required by LPDDR2, all within a 24-ball footprint.

Availability

S80KS2563GABHA020 is available at Aetrix Electronics and suitable for automotive ADAS camera buffers, industrial PLC HMIs, edge AI inference accelerators, and wireless gateway firmware overlay systems requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for S80KS2563GABHA020 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D centers and ISO/TS 16949-certified manufacturing.

The HYPERRAM™ product line targets high-performance, low-pin-count external memory for resource-constrained MCUs and SoCs - designed specifically to replace parallel SRAM and legacy PSRAM in cost-sensitive, space-limited embedded systems.

FAQ

What is the function of the RWDS pin during a read transaction?

RWDS serves as a read data strobe during read transactions, toggling synchronously with DQ to indicate valid data windows. It is driven HIGH by the device at the start of any transaction requiring additional refresh latency (tRFH), allowing the host to extend initial access delay without fixed worst-case timing margins.

Does S80KS2563GABHA020 require external refresh commands from the host controller?

No. The device contains fully autonomous self-refresh logic that manages DRAM cell refresh internally. The host only issues xSPI commands; no refresh cycles, timers, or scheduling routines are needed - making it appear electrically and functionally identical to static RAM.

Can burst length be changed dynamically during operation?

Yes. Burst length is configured via Configuration Register 0 (CR0), which is writable through the xSPI WRITE ANY REGISTER command. Changes take effect immediately on subsequent transactions, enabling runtime adaptation to varying data block sizes in streaming applications.

What is the minimum VCC/VCCQ supply voltage tolerance for reliable operation at 200 MHz?

The device specifies 1.71 V to 1.89 V for both VCC (array) and VCCQ (I/O) supplies at 200 MHz operation. Operation below 1.71 V risks timing violations and data corruption; voltage regulation must maintain ±3% stability under peak 25 mA write current transients.