Infineon Technologies S80KS2563GABHA023

Overview

S80KS2563GABHA023 from Infineon Technologies is a 256 Mb self-refresh DRAM (HYPERRAM™) with Octal xSPI interface, operating at 1.8 V. It functions as pseudo-static RAM in host systems, eliminating external refresh management while delivering DDR data transfers on both clock edges. Key specs include 200 MHz max clock rate, 400 MBps throughput, 24-ball FBGA package, and support for industrial (–40 °C to +85 °C) and automotive AEC-Q100 Grade 2 (–40 °C to +105 °C) temperature ranges.

For engineers reviewing the S80KS2563GABHA023 datasheet, S80KS2563GABHA023 pinout, S80KS2563GABHA023 application, or S80KS2563GABHA023 equivalent, this device is selected for high-bandwidth, low-pin-count memory expansion in resource-constrained embedded controllers, display buffers, and real-time MCU subsystems where deterministic latency and simplified memory management are critical.

Technical Context

The S80KS2563GABHA023 implements an xSPI (Octal) DDR interface with 11–12 signal lines, supporting linear and wrapped burst lengths (16–128 bytes) and hybrid burst modes. Its internal refresh controller autonomously manages DRAM array refresh without host intervention, presenting a PSRAM-like interface abstraction.

It uses a 25-nm DRAM process with configurable output drive strength, RWDS bidirectional strobe for read-data timing and write-mask signaling, and supports four power modes: active, interface standby, hybrid sleep, and deep power down (15 µA at 105 °C).

Key Specifications

Pinout & Package

Package: 24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch), RoHS-compliant, moisture sensitivity level 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed, low-pin-count DRAM applications.

Compared with S27KS0641DPBHV020 and W9825G6KH-6I, the S80KS2563GABHA023 uniquely combines automotive-grade reliability, xSPI's 11-signal simplicity, and autonomous refresh-reducing BOM count, layout complexity, and firmware overhead in next-gen edge devices.

Availability

S80KS2563GABHA023 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial HMIs, and edge AI accelerators requiring stable component supply, long-term lifecycle assurance, and AEC-Q100 qualification.

Supply support for S80KS2563GABHA023 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D and manufacturing infrastructure.

The HYPERRAM™ product line targets embedded systems needing high-density, low-pin-count memory expansion without DDR complexity-designed specifically for MCU- and SoC-based applications where space, power, and software overhead are constrained.

FAQ

What is the function of the RWDS pin in S80KS2563GABHA023?

RWDS is a bidirectional strobe used for timing synchronization: it outputs a HIGH pulse at transaction start to indicate added refresh latency (tRFH), acts as read-data strobe during reads, and serves as write-mask input during writes. Its dual role eliminates need for separate RD/WR strobes, reducing interface complexity.

Does S80KS2563GABHA023 require external refresh commands from the host?

No. The device contains autonomous self-refresh logic that manages DRAM array refresh internally. Host only issues standard xSPI commands; refresh occurs transparently during idle periods or inserted latency windows signaled via RWDS, making it appear as PSRAM to firmware.

Can S80KS2563GABHA023 operate with single-ended clock only?

Yes. The device supports both single-ended (CK only) and differential (CK/CK#) clock configurations. When using single-ended mode, CK# must be tied to VSS or VCC per datasheet guidance; performance remains at 200 MHz, but noise immunity is reduced compared to differential operation.

What is the minimum supported burst length and how is it configured?

The minimum burst length is 16 bytes (8 clock cycles), selectable via Configuration Register 0 (CR0). Burst mode is set using CR0[7:6] bits: '00' = linear, '01' = wrapped 16B, '10' = wrapped 32B, '11' = hybrid. No hardware strapping is required-configuration is done via WRITE ANY REGISTER command after power-up.