Infineon Technologies S80KS2563GABHB020

Overview

S80KS2563GABHB020 from Infineon Technologies is a 256 Mb self-refresh DRAM (HYPERRAM™) with Octal xSPI interface, operating at 1.8 V. It functions as pseudo-static RAM for microcontroller- and SoC-based systems requiring high-bandwidth, low-pin-count external memory-supporting up to 400 MBps throughput, 200 MHz DDR clock, and configurable burst lengths (16–128 bytes) in industrial and automotive applications.

For engineers reviewing the S80KS2563GABHB020 datasheet, S80KS2563GABHB020 pinout, S80KS2563GABHB020 application, or S80KS2563GABHB020 equivalent, this device delivers deterministic latency, on-die refresh management, and hybrid sleep/deep power-down modes-critical for real-time embedded systems where external memory must emulate SRAM behavior without host refresh intervention.

Technical Context

The S80KS2563GABHB020 implements an xSPI (Octal) DDR interface with 11–12 signal lines (including optional CK#/CS#/RWDS/DQ[7:0]/RESET#), supporting command-address-data transactions with 16-bit opcodes sent on both clock edges. Its internal logic handles full/partial array refresh autonomously during idle cycles or added latency windows signaled via RWDS high pulse.

It uses 25-nm DRAM technology with separate VCC (1.8 V core) and VCCQ (1.8 V I/O) supplies, supports linear and wrapped burst modes (8/16/32/64 clocks), and features configurable output drive strength and tACC ≤ 35 ns at 200 MHz-enabling seamless integration into resource-constrained MCU interfaces without dedicated DRAM controllers.

Key Specifications

Pinout & Package

24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch), RoHS-compliant, with ball map matching JEDEC MO-276AA standard. Package supports automated reflow assembly and thermal performance suitable for high-density PCB layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed, low-pin-count external memory applications.

Compared with S27KS0641DPBHV020 and W958D8MBJX1I, the S80KS2563GABHB020 uniquely combines 256 Mb density, xSPI simplicity, sub-20 µA deep power-down, and AEC-Q100 Grade 2 qualification-making it the only drop-in solution for automotive-grade MCU memory expansion without controller redesign.

Availability

S80KS2563GABHB020 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial HMIs, smart home gateways, and medical patient monitors requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for S80KS2563GABHB020 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q200.

The HYPERRAM™ product line targets MCU- and SoC-based systems needing high-bandwidth external memory without DRAM controller complexity-designed specifically for automotive, industrial, and IoT edge devices demanding reliability, low power, and small footprint.

FAQ

Does S80KS2563GABHB020 require external refresh circuitry?

No. The device integrates self-refresh logic that automatically manages DRAM array refresh during idle periods or inserted latency windows signaled via RWDS. Host processors interact with it as pseudo-static RAM-no refresh commands, timers, or scheduling are needed in firmware or hardware.

What is the function of the RWDS pin during read and write operations?

RWDS serves three roles: (1) signals required refresh latency at transaction start (driven HIGH), (2) acts as read data strobe during reads (output), and (3) functions as write data mask during writes (input). Its bidirectional behavior is controlled automatically by internal state machine based on transaction type.

Can S80KS2563GABHB020 operate with single-ended clock only?

Yes. The device supports single-ended CK input by default. Differential clock (CK/CK#) is optional and enabled only when bit [7] of Configuration Register 0 is set. No external termination or layout changes are required for single-ended mode.

Is S80KS2563GABHB020 compatible with standard SPI host controllers?

No. It requires an xSPI (Octal) DDR-capable host controller-such as Infineon's XMC4000 series, NXP i.MX RT1170, or Microchip SAM9X7 with xSPI peripheral. Standard SPI peripherals cannot generate the 16-bit opcode format, DDR timing, or RWDS protocol required for command execution.