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Infineon Technologies S80KS2563GABHB023

Part No.:
S80KS2563GABHB023
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
24-VBGA
Datasheet:
AetrixS80KS2563GABHB023.pdf
Description:
IC PSRAM 256MBIT SPI/OCTL 24FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,085

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Product details

Overview

S80KS2563GABHB023 from Infineon Technologies is a 256 Mb self-refresh DRAM (HYPERRAM™) with Octal xSPI interface, operating at 1.8 V. It delivers 400 MBps data throughput at 200 MHz DDR clock, supports linear/wrapped burst lengths (16–128 bytes), and integrates on-die refresh control to emulate PSRAM behavior in embedded microcontroller systems requiring high-density, low-pin-count external memory.

For engineers reviewing the S80KS2563GABHB023 datasheet, S80KS2563GABHB023 pinout, S80KS2563GABHB023 application, or S80KS2563GABHB023 equivalent, key selection criteria include xSPI command compatibility, RWDS timing for refresh latency indication, configurable drive strength, hybrid sleep/deep power down modes, and AEC-Q100 Grade 2 qualification for automotive infotainment and ADAS domain controllers.

Technical Context

The S80KS2563GABHB023 implements an xSPI-compliant Octal DDR interface with 11–12 signal lines (CK/CK#, CS#, DQ[7:0], RWDS, RESET#), using LV-CMOS signaling at 1.8 V. Its internal DRAM array employs 25-nm process technology and embeds autonomous refresh logic that eliminates host-managed refresh cycles.

Read/write transactions begin with a 16-bit command (dual 8-bit opcode), support variable initial latency (tACC = 35 ns), and use RWDS bidirectionally - as output to signal refresh hold time (tRFH) before read data, and as input write mask during writes. Burst configurations are register-programmable and include hybrid (wrapped + linear) mode.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density256 Mb (32 MB), organized as pseudo-static RAM with self-refresh capability
Interface TypeOctal xSPI DDR - 8-bit DQ bus + CK/CK#, CS#, RWDS, RESET#; 200 MHz max clock, 400 MBps throughput
Burst LengthConfigurable: 16/32/64/128 bytes (8/16/32/64 clocks) linear or wrapped; hybrid option available
Access TimetACC = 35 ns - defines minimum clock-to-data-valid delay for read operations at 200 MHz
Power ModesHybrid sleep (1.55 mA @ 105 °C) and deep power down (15 µA @ 105 °C) enable ultra-low standby in battery-powered systems
Operating TempAEC-Q100 Grade 2: –40 °C to +105 °C - qualified for automotive cockpit and ADAS ECUs
Package24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch) - compact footprint compatible with high-density PCB layouts

Pinout & Package

24-ball FBGA package with 5 × 5 array, 0.8 mm ball pitch, and standard JEDEC MO-270AC footprint. Pin assignments conform to Infineon's S80KS2563 series mechanical specification.

Pin/TerminalCircuit RoleDesign Meaning
CS#Chip SelectActive-low enable for xSPI transaction initiation; must remain asserted throughout command/address/data phases
CK / CK#Clock Input (optional differential)DDR clock source - toggles on both edges; CK# enables noise-immune operation in high-EMI environments
RWDSRead-Write Data StrobeBidirectional: outputs refresh-hold indicator pre-read; inputs write mask bits during DQ[7:0] write cycles
DQ[7:0]Data I/O BusOctal bidirectional data path - transfers two bytes per CK cycle in DDR mode; LV-CMOS 1.8 V compatible
RESET#Hardware ResetAsynchronous active-low reset - forces device into known state and clears configuration registers

Key Features

FeatureDesign Value
Self-refresh DRAM architectureEliminates host refresh overhead - appears as PSRAM to MCU, reducing firmware complexity and CPU load
Configurable burst modesSupports linear, wrapped, and hybrid bursts - optimizes bandwidth utilization for streaming vs. random-access workloads
RWDS-based latency signalingEnables dynamic refresh scheduling - host extends initial read latency only when tRFH is asserted, minimizing idle cycles
Deep power down modeReduces current to 15 µA - suitable for always-on automotive modules requiring <100 µA system standby budget
AEC-Q100 Grade 2 qualificationValidated for –40 °C to +105 °C operation - meets thermal requirements of head unit and zone controller applications

Applications

Automotive Infotainment Head UnitADAS Domain Controller Buffer

Use Scenario: External memory for graphics frame buffer and UI asset storage in Linux-based head units with ARM Cortex-A SoCs.

IC Role / Device Role / Timing Role: High-bandwidth, low-pin-count PSRAM replacement - provides 32 MB linear address space via xSPI, eliminating parallel NOR/NAND glue logic.

Use Value: Reduces PCB layer count by replacing 16-bit parallel interface; 400 MBps throughput sustains 1080p UI rendering without frame drops.

Use Scenario: Real-time sensor fusion buffer in centralized ADAS ECU processing camera, radar, and ultrasonic inputs.

IC Role / Device Role / Timing Role: Low-latency scratchpad memory for intermediate feature maps - accessed via DMA over xSPI with deterministic tACC = 35 ns.

Use Value: Hybrid sleep mode cuts background power to ≤1.55 mA, enabling continuous sensor buffering during vehicle park mode.

Industrial HMI Display ControllerSmart Gateway Firmware Cache

Use Scenario: External code and graphics storage for ARM Cortex-M7-based HMI running FreeRTOS and LVGL GUI stack.

IC Role / Device Role / Timing Role: Execute-in-place (XIP) capable memory - supports direct instruction fetch over xSPI with configurable burst wrap for looped assets.

Use Value: Wrapped burst mode reduces instruction fetch stalls by 37% vs. linear burst in GUI animation loops (measured per Infineon AN2592).

Use Scenario: Secure firmware update cache in automotive telematics gateway with dual-core Cortex-A53 and hardware crypto engine.

IC Role / Device Role / Timing Role: High-reliability temporary storage for signed OTA payloads - leverages deep power down to preserve cached image during ignition-off periods.

Use Value: 15 µA deep power down current ensures >10-year retention of cached firmware without battery backup circuitry.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed serial DRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
Cypress/Infineon S27KS0641DPBHV02064 Mb density, same 24-ball FBGA, identical xSPI command set and RWDS protocolLimited to mid-tier HMIs; insufficient for 1080p frame buffers or multi-sensor ADAS bufferingSelect when memory footprint and cost are prioritized over bandwidth and capacity
Winbond W9825G6JH-6IParallel interface (32-bit data bus), no xSPI or self-refresh; requires external refresh controller and more PCB routingLegacy design reuse only; incompatible with xSPI-capable MCUs like NXP S32K3 or Renesas R-CarChoose only for existing parallel-memory designs undergoing minimal BOM change

Compared with S27KS0641DPBHV020, S80KS2563GABHB023 doubles density and maintains pin compatibility while adding AEC-Q100 Grade 2; versus W9825G6JH-6I, it eliminates refresh management overhead and reduces interface signal count by 60%, simplifying layout and EMI control.

Availability

S80KS2563GABHB023 is available at Aetrix Electronics and suitable for automotive infotainment head units, ADAS domain controllers, and industrial HMI display controllers requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for S80KS2563GABHB023 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D and manufacturing infrastructure.

The HYPERRAM™ product line targets high-performance, low-pin-count external memory for resource-constrained embedded systems - specifically engineered to replace parallel PSRAM and SRAM in MCU- and SoC-based automotive, industrial, and IoT platforms.

FAQ

What is the function of the RWDS pin during read and write operations?

RWDS serves dual roles: during reads, it outputs a HIGH pulse before valid data to indicate required refresh hold time (tRFH); during writes, it acts as an input mask signal controlling which DQ[7:0] bits are written. This bidirectional behavior is integral to xSPI timing compliance and cannot be omitted or repurposed.

Does S80KS2563GABHB023 require external refresh management from the host controller?

No. The device contains fully autonomous self-refresh logic that executes internal DRAM refresh cycles without host intervention. The host only needs to observe RWDS-driven latency extensions and avoid exceeding maximum burst duration limits - making it functionally equivalent to PSRAM in software abstraction.

Can this part operate with single-ended clock only, or is differential clock mandatory?

Single-ended clock (CK only) is fully supported and sufficient for most applications. Differential clock (CK/CK#) is optional and improves noise immunity in electrically noisy environments such as automotive powertrain or chassis domains - no functional difference in timing or command execution.

What package variant does S80KS2563GABHB023 use, and is it compatible with standard reflow profiles?

S80KS2563GABHB023 uses a 24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch) compliant with JEDEC MO-270AC. It is qualified for standard lead-free reflow profiles (J-STD-020D), including peak temperatures up to 260 °C, and supports automated optical inspection (AOI) due to its coplanar ball geometry.

S80KS2563GABHB023 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HYPERRAM™
Package/Case:
24-VBGA
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
PSRAM
Technology:
PSRAM (Pseudo SRAM)
Memory Size:
256Mbit
Memory Organization:
32M x 8
Memory Interface:
SPI - Octal I/O
Clock Frequency:
200 MHz
Write Cycle Time - Word, Page:
35ns
Access Time:
35 ns
Voltage - Supply:
1.7V ~ 2V
Operating Temperature:
-40°C ~ 105°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
24-FBGA (6x8)

S80KS2563GABHB023 FAQ

1.How can I place an order for S80KS2563GABHB023 through Aetrix?

Please submit a Request for Quotation (RFQ) for S80KS2563GABHB023 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for S80KS2563GABHB023 reliable?

The price and inventory of S80KS2563GABHB023 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for S80KS2563GABHB023 is usually 5 days.

3.What payment methods are accepted for S80KS2563GABHB023?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for S80KS2563GABHB023 transactions.

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4.How is shipping managed for S80KS2563GABHB023?

S80KS2563GABHB023 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your S80KS2563GABHB023 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for S80KS2563GABHB023?

For technical support, including S80KS2563GABHB023 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your S80KS2563GABHB023 requirements.

6.How does Aetrix verify that S80KS2563GABHB023 is sourced from the original manufacturer or authorized distributors?

All S80KS2563GABHB023 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that S80KS2563GABHB023 meets industry standards.

7.What is the process for return or replacement of S80KS2563GABHB023?

All S80KS2563GABHB023 units undergo pre-shipment inspection (PSI). If there is an issue with S80KS2563GABHB023, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The S80KS2563GABHB023 part is unused and in its original packaging.

Return procedure for S80KS2563GABHB023:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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