Infineon Technologies S80KS2563GABHI020

Overview

S80KS2563GABHI020 from Infineon Technologies is a 256 Mb self-refresh DRAM (HYPERRAM™) with Octal xSPI interface, operating at 1.8 V, supporting DDR transfers up to 200 MHz, delivering 400 MBps throughput, and featuring configurable burst lengths (16–128 bytes), partial array refresh, and industrial-plus temperature range (–40 °C to +105 °C) for embedded microcontroller memory expansion.

For engineers reviewing the S80KS2563GABHI020 datasheet, S80KS2563GABHI020 pinout, S80KS2563GABHI020 application, or S80KS2563GABHI020 equivalent, key selection considerations include xSPI command compatibility, RWDS timing behavior during refresh latency, burst mode configuration register settings, and deep power-down current (15 µA at 105 °C) in low-power edge devices.

Technical Context

The S80KS2563GABHI020 implements a pseudo-static RAM architecture using 25-nm DRAM cells with on-die self-refresh control logic, eliminating host-managed refresh cycles. Its xSPI interface uses 11–12 signal lines (including optional CK#/CS#/RWDS/DQ[7:0]) and supports both linear and wrapped burst modes with hybrid burst capability.

It operates in DDR mode with data transferred on both clock edges, requiring continuous CK toggling during read latency periods. RWDS serves dual roles: outputting refresh-hold indication at transaction start and acting as read strobe or write mask depending on direction - a hardware-synchronized timing signal critical for deterministic latency handling.

Key Specifications

Pinout & Package

24-ball FBGA package (5 mm × 5 mm, 0.8 mm pitch), RoHS-compliant, with 1.8 V I/O and core supply compatibility. Pin assignment optimized for xSPI signal integrity and minimal PCB layer count.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed serial PSRAM applications.

Compared with S27KS0641DPBHV020 and W958D8MWYX1I, the S80KS2563GABHI020 uniquely delivers 200 MHz operation with integrated refresh latency signaling via RWDS - enabling drop-in integration into existing xSPI PSRAM firmware without timing margin revalidation.

Availability

S80KS2563GABHI020 is available at Aetrix Electronics and suitable for automotive ADAS modules, industrial HMIs, and medical wearables requiring stable component supply, extended temperature support, and guaranteed long-term lifecycle availability.

Supply support for S80KS2563GABHI020 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D and manufacturing infrastructure.

The HYPERRAM™ product line targets MCU-based embedded systems needing high-density, low-pin-count external memory - designed specifically to replace parallel SRAM/PSRAM and simplify memory subsystem design in space-constrained applications.

FAQ

Does S80KS2563GABHI020 require external refresh commands from the host MCU?

No. The device contains on-die self-refresh logic that automatically manages DRAM cell refresh during idle periods. The host only issues standard xSPI commands; refresh timing is fully transparent and handled internally, making it functionally equivalent to PSRAM in system-level software design.

What is the role of the RWDS signal during a read transaction?

During a read transaction, RWDS acts as a read data strobe synchronized to the DQ bus, indicating valid data capture points on both clock edges. It also signals required refresh hold latency at the start of any transaction by driving HIGH - a hardware handshake that informs the host to insert additional wait states before data transfer begins.

Can S80KS2563GABHI020 operate with a single-ended clock only?

Yes. The device supports single-ended CK input by default. Differential CK/CK# is optional and enabled via configuration register bit CR0[12]; using differential clock improves noise immunity in electrically noisy environments like automotive or industrial motor-control systems, but adds PCB routing complexity.

How does deep power down mode affect memory retention?

In deep power down mode, the device retains all stored data while drawing only 15 µA at 105 °C. Memory contents remain valid as long as VCC and VCCQ are maintained above 1.71 V. Exit time from deep power down is 100 µs maximum, including internal stabilization and register reload - no host-initiated initialization sequence is required.