Infineon Technologies S80KS2563GABHI023

Overview

S80KS2563GABHI023 from Infineon is a 256 Mb self-refresh DRAM (HYPERRAM™) with Octal xSPI interface, operating at 1.8 V. It delivers 400 MBps data throughput at 200 MHz DDR clock, supports linear/wrapped burst lengths up to 128 bytes, and integrates on-die refresh control for pseudo-static operation in microcontroller-based systems requiring high-density, low-pin-count external memory.

For engineers reviewing the S80KS2563GABHI023 datasheet, S80KS2563GABHI023 pinout, S80KS2563GABHI023 application, or S80KS2563GABHI023 equivalent, key selection considerations include its 24-ball FBGA package, RWDS-based latency signaling, configurable hybrid sleep/deep power down modes, and AEC-Q100 Grade 2 qualification for automotive infotainment and ADAS host processors.

Technical Context

This device implements an xSPI-compliant Octal DDR interface with 11–12 signal lines (including optional CK#), using LV-CMOS I/O at 1.8 V. Its internal DRAM array employs 25-nm process technology and automatic self-refresh logic that eliminates host-managed refresh cycles.

Read/write transactions begin with CS# assertion and a 16-bit command (dual 8-bit opcode), followed by address and data; RWDS serves dual roles - indicating refresh latency at transaction start and acting as read strobe or write mask during data transfer.

Key Specifications

Pinout & Package

24-ball Fine-Pitch Ball Grid Array (FBGA) package with 0.8 mm ball pitch and 5 mm × 5 mm body size. Pinout conforms to Infineon's standardized HYPERRAM™ layout per datasheet Rev. *C, page 46–47.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed serial DRAM applications.

Compared with S27KS0641DPBHI020, S80KS2563GABHI023 offers 4× density and advanced power modes; versus W9825G6JH-6I, it eliminates DDR controller dependency and reduces system-level timing validation effort despite slightly lower peak bandwidth.

Availability

S80KS2563GABHI023 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial HMIs, edge AI inference accelerators, and ADAS preprocessing subsystems requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for S80KS2563GABHI023 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D and manufacturing infrastructure.

S80KS2563GABHI023 belongs to the HYPERRAM™ product line, designed specifically to replace parallel PSRAM and low-density DDR in resource-constrained embedded systems where pin count, power, and firmware simplicity are critical.

FAQ

What is the function of the RWDS pin in S80KS2563GABHI023?

RWDS serves two distinct functions: at the start of any transaction, it outputs a HIGH pulse to indicate required refresh latency (tRFH); during data transfer, it acts as a read data strobe (output) or write data mask (input). This dual-role signaling eliminates need for separate control lines and enables precise timing alignment without additional host logic.

Does S80KS2563GABHI023 require external refresh commands from the host controller?

No. The device contains fully autonomous self-refresh circuitry that executes internal refresh operations without host intervention. The host only issues standard xSPI commands (READ/WRITE/CONFIG); refresh timing and scheduling are handled entirely on-die, making the memory appear functionally identical to static RAM in software.

Can S80KS2563GABHI023 operate with single-ended clock only, or is differential clock mandatory?

Single-ended clock (CK only) is fully supported and sufficient for most industrial and consumer applications. Differential clock (CK/CK#) is optional and intended for high-noise automotive environments where improved jitter tolerance and EMI rejection are required; both modes use identical command protocol and timing specifications.

What is the minimum supported burst length, and how is it configured?

The minimum burst length is 16 bytes (8 clock cycles), implemented as a wrapped burst. Configuration is performed via Configuration Register 0 (CR0) bit [5:4], which selects burst type (linear/wrapped/hybrid) and length (16/32/64/128 bytes); settings persist across power cycles when stored in non-volatile register bits.