Infineon Technologies S80KS2563GABHM020

Overview

S80KS2563GABHM020 from Infineon Technologies is a 256 Mb self-refresh DRAM (HYPERRAM™) with octal xSPI interface, operating at 1.8 V. It delivers 400 MBps data throughput via DDR transfers on an 8-bit DQ bus synchronized to a 200 MHz clock, supports partial and full array refresh, and targets embedded systems requiring low-pin-count high-bandwidth memory expansion beyond SPI NOR/Flash.

For engineers reviewing the S80KS2563GABHM020 datasheet, S80KS2563GABHM020 pinout, S80KS2563GABHM020 application, or S80KS2563GABHM020 equivalent, key selection criteria include xSPI command compatibility, RWDS timing behavior during refresh latency indication, configurable burst length (16–128 bytes), hybrid sleep mode current (1.55 mA @105 °C), and FBGA-24 package thermal profile for industrial and automotive Grade 2 operation.

Technical Context

This device implements a pseudo-static RAM architecture using 25-nm DRAM cells with on-die self-refresh control logic, eliminating host-managed refresh cycles. Its xSPI interface uses DDR signaling across eight bidirectional DQ lines, with RWDS serving dual roles: read-data strobe and write-data mask, while also asserting high to signal required refresh hold time (tRFH) before data transfer.

The memory supports linear and wrapped burst modes (8/16/32/64 clocks), hybrid burst (wrapped + linear), and configurable output drive strength. Power management includes hybrid sleep (1.55 mA standby @105 °C) and deep power down (15 µA), with AEC-Q100 Grade 2 qualification (–40 °C to +105 °C) and 24-ball FBGA (5 mm × 5 mm) packaging.

Key Specifications

Pinout & Package

24-ball FBGA (5 mm × 5 mm, 0.5 mm pitch), RoHS-compliant, moisture sensitivity level 3. Package footprint aligns with JEDEC MO-279AB standard.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed serial DRAM applications.

Compared with S27KL0641DPBHI020 and W9825G6JH-6I, the S80KS2563GABHM020 uniquely balances density, low-pin-count xSPI simplicity, self-refresh autonomy, and AEC-Q100 Grade 2 qualification-making it optimal for next-gen automotive and industrial displays where layout area, firmware overhead, and thermal robustness are co-constrained.

Availability

S80KS2563GABHM020 is available at Aetrix Electronics and suitable for automotive digital clusters, industrial HMI display buffers, edge AI sensor hubs, and medical portable monitors requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for S80KS2563GABHM020 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q200 standards.

The HYPERRAM™ product line was designed to bridge the performance gap between serial Flash and parallel DRAM-delivering DRAM-like bandwidth with SPI-like simplicity for resource-constrained embedded processors.

FAQ

What is the function of the RWDS pin during a read transaction?

RWDS serves as a read-data strobe during xSPI read transactions, toggling synchronously with valid DQ data edges. It also signals internal refresh latency requirements: if the memory needs to perform self-refresh before returning data, it drives RWDS HIGH for tRFH cycles immediately after address phase completion-requiring the host to insert additional wait states before sampling DQ.

Does S80KS2563GABHM020 require external refresh commands from the host?

No. The device contains on-die self-refresh logic that autonomously manages DRAM array refresh during idle periods or inserted latency windows. Host firmware treats it as pseudo-static RAM-no refresh commands, timers, or scheduling routines are needed, significantly simplifying driver implementation and reducing CPU overhead.

Can the burst length be changed dynamically during operation?

Yes. Burst length is configured via Configuration Register 0 (CR0), which is writable through xSPI WRITE ANY REGISTER commands. The setting takes effect on subsequent transactions. Supported lengths are 16, 32, 64, or 128 bytes (8, 16, 32, or 64 clocks), and can be updated without reset or power cycle-enabling runtime adaptation to varying data block sizes.

How does the hybrid sleep mode differ from deep power down?

Hybrid sleep retains full memory contents while reducing current to 1.55 mA at 105 °C, allowing fast wake-up (<1 µs) and immediate data access. Deep power down draws only 15 µA but requires full re-initialization-including register reload and internal calibration-resulting in ~100 µs wake-up latency. Hybrid sleep is used for short idle intervals; deep power down for extended standby.