Infineon Technologies S80KS2563GABHM023

Overview

S80KS2563GABHM023 from Infineon Technologies is a 256 Mb self-refresh DRAM (HYPERRAM™) with octal xSPI interface, operating at 1.8 V, supporting DDR transfers up to 200 MHz and delivering 400 MBps throughput. It integrates on-die refresh control, uses 25-nm DRAM technology, and is packaged in a 24-ball FBGA for industrial temperature range (–40 °C to +85 °C), targeting high-bandwidth memory expansion in microcontroller-based edge devices.

For engineers reviewing the S80KS2563GABHM023 datasheet, S80KS2563GABHM023 pinout, S80KS2563GABHM023 application, or S80KS2563GABHM023 equivalent, key selection criteria include its octal xSPI timing compliance, configurable burst lengths (16–128 bytes), RWDS-driven latency signaling, hybrid sleep/deep power-down modes, and AEC-Q100 Grade 3 qualification.

Technical Context

This HYPERRAM device implements a pseudo-static RAM abstraction via integrated self-refresh logic that autonomously manages DRAM array refresh without host intervention. Its xSPI interface operates in DDR mode with 11–12 signal lines (including optional CK#), using LV-CMOS I/Os and supporting command/address/data phases with 16-bit opcodes repeated across both clock edges.

Read transactions require initial latency that may be extended by tRFH refresh hold time signaled via RWDS high pulse; write transactions to registers are latency-free. The memory supports linear and wrapped burst configurations (8–64 clocks), hybrid burst mode, and configurable output drive strength for signal integrity tuning across PCB trace lengths.

Key Specifications

Pinout & Package

24-ball FBGA package with 5 × 5 array footprint, 0.8 mm ball pitch, and JEDEC MO-270 compliant mechanical outline.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed serial DRAM applications.

Compared with S27KS0641DPBHV020 and W9825G6JH-6I, the S80KS2563GABHM023 uniquely balances density, low pin count, autonomous refresh, and deterministic xSPI timing - making it optimal for MCU-centric designs where simplicity, thermal robustness, and predictable latency outweigh raw bandwidth or legacy DDR compatibility.

Availability

S80KS2563GABHM023 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial HMIs, edge AI sensor hubs, and smart home gateways requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for S80KS2563GABHM023 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D and manufacturing infrastructure.

The HYPERRAM™ product line targets MCU-based systems needing high-density, low-pin-count external memory - designed specifically to replace parallel PSRAM and reduce system-level timing complexity in resource-constrained edge devices.

FAQ

What is the function of the RWDS pin during read and write operations?

RWDS serves three distinct roles: (1) outputs a HIGH pulse before read data to signal required refresh hold time (tRFH), extending initial latency; (2) acts as a read data strobe synchronized to DQ transitions; and (3) functions as a write data mask during write operations. Its bidirectional behavior is controlled automatically by internal logic and requires no host direction control.

Does S80KS2563GABHM023 require external refresh management?

No. The device contains fully autonomous self-refresh logic that executes all necessary DRAM array refresh cycles internally. The host processor interacts with it as a pseudo-static RAM - no refresh commands, timers, or scheduling are needed in firmware or hardware, simplifying integration with MCUs lacking dedicated DRAM controllers.

Can this part operate with a single-ended clock only, or is differential clock mandatory?

A single-ended clock (CK only) is fully supported and sufficient for most applications. The CK# pin is optional and used only when differential clocking is implemented for improved noise immunity in electrically noisy environments. Pinout remains identical in both configurations; CK# is simply left unconnected if unused.

How does burst length configuration affect performance in real-world MCU applications?

Configuring burst length to match the MCU's cache line size (e.g., 32 bytes for Cortex-M7) minimizes bus turnaround and maximizes throughput. Wrapped bursts improve spatial locality for sequential reads, while hybrid mode (wrapped + linear) optimizes mixed access patterns. Incorrect burst settings cause unnecessary bus stalls or partial transfers, degrading effective bandwidth by up to 35% in GUI rendering workloads.