Infineon Technologies S80KS2563GABHV020

Overview

S80KS2563GABHV020 from Infineon is a 256 Mb self-refresh DRAM (HYPERRAM™) with Octal xSPI interface, operating at 1.8 V, supporting DDR transfers up to 200 MHz, delivering 400 MBps throughput, and featuring configurable burst lengths (16–128 bytes), partial array refresh, and industrial-plus temperature range (–40 °C to +105 °C) in 24-ball FBGA package - used as high-bandwidth, low-pin-count external memory for microcontroller-based edge AI inference accelerators.

For engineers reviewing the S80KS2563GABHV020 datasheet, S80KS2563GABHV020 pinout, S80KS2563GABHV020 application, or S80KS2563GABHV020 equivalent, key selection criteria include xSPI command compatibility, RWDS timing behavior during refresh latency indication, burst-length configuration register settings, hybrid sleep mode current consumption (1.55 mA @ 105 °C), and AEC-Q100 Grade 2 qualification for automotive infotainment display buffers.

Technical Context

This device implements a pseudo-static RAM architecture using 25-nm DRAM cells with on-die self-refresh control logic, eliminating host-managed refresh cycles. Its xSPI interface uses 11–12 signal lines (including optional CK#), supports both linear and wrapped burst modes, and relies on RWDS for dynamic latency signaling during read transactions.

The memory controller integrates dedicated logic for command decoding (16-bit opcode), address mapping across 256 Mb density, and configurable drive strength on DQ[7:0] and RWDS. It supports four power states - active, interface standby, hybrid sleep, and deep power down - with 15 µA retention current in deep power down mode.

Key Specifications

Pinout & Package

24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch) with ball map per Infineon datasheet Rev. *C, page 46–47. Pin functions defined for xSPI protocol compliance and DRAM self-refresh operation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed, low-pin-count external memory applications.

Compared with S27KS0641DPBHV020, this part doubles capacity without changing footprint or interface logic; versus W958D8MBYA1I, it trades peak bandwidth for 40% fewer signals and seamless integration with xSPI-capable MCUs like NXP i.MX RT1170 or Renesas RA8.

Availability

S80KS2563GABHV020 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial HMIs, edge AI accelerators, and smart camera image pipelines requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for S80KS2563GABHV020 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D and manufacturing infrastructure.

This device belongs to the HYPERRAM™ product line, designed specifically to replace parallel PSRAM and low-density DDR in MCU-based systems where pin count, power, and simplicity outweigh raw bandwidth demands.

FAQ

Does S80KS2563GABHV020 require external refresh control from the host processor?

No. The device contains on-die self-refresh logic that autonomously manages DRAM array refresh during idle periods. The host only issues xSPI commands and observes RWDS for dynamic latency extension; no refresh commands or timing windows are required in software.

What is the function of the RWDS signal beyond data strobing?

RWDS serves three roles: (1) indicates required refresh latency at transaction start (driven HIGH), (2) acts as read data strobe during read bursts, and (3) functions as write data mask during write bursts. Its dual-purpose design eliminates need for separate RD/WR control lines.

Can S80KS2563GABHV020 operate with only single-ended clock (CK), or is differential clock (CK/CK#) mandatory?

Single-ended clock (CK only) is fully supported and uses 11-signal configuration. CK# is optional and enables 12-signal mode for improved noise immunity in electrically noisy environments such as automotive chassis domains - no functional difference in timing or command execution.

How does the hybrid burst mode work, and when should it be configured?

Hybrid burst executes one wrapped burst (e.g., 64-byte circular wrap) followed immediately by a linear burst. It is optimal for applications mixing cached data access (wrapped) with sequential streaming (linear), such as video frame buffering with metadata headers - configured via CR1[11:8] bits in device configuration register 1.