Infineon Technologies S80KS2563GABHV023

Overview

S80KS2563GABHV023 from Infineon Technologies is a 256 Mb self-refresh DRAM (HYPERRAM™) with octal xSPI interface, operating at 1.8 V, supporting DDR transfers up to 200 MHz and delivering up to 400 MBps throughput. It integrates on-die refresh control, uses 25-nm DRAM technology, and is packaged in a 24-ball FBGA for industrial-plus (–40 °C to +105 °C) operation - deployed in high-bandwidth MCU-attached memory subsystems for graphics buffers and firmware overlays.

For engineers reviewing the S80KS2563GABHV023 datasheet, S80KS2563GABHV023 pinout, S80KS2563GABHV023 application, or S80KS2563GABHV023 equivalent, key selection criteria include xSPI command latency handling, RWDS-driven refresh signaling, configurable burst lengths (16–128 bytes), hybrid sleep/deep power-down modes, and AEC-Q100 Grade 2 qualification for automotive infotainment memory expansion.

Technical Context

This device implements a pseudo-static RAM architecture using internal self-refresh logic that eliminates host-managed refresh cycles. Its xSPI interface operates in DDR mode with bidirectional RWDS used both as read data strobe and write mask, and supports linear/wrapped/hybrid burst modes across 8-bit DQ lines.

The memory controller manages partial array refresh (1/8, 1/4, 1/2) and full refresh autonomously, triggered during idle intervals between transactions. Timing-critical operations - including tACC ≤ 35 ns and tRFH insertion signaled via RWDS HIGH - require precise host coordination of CS# deassertion windows and CK continuity during latency periods.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (5 mm × 5 mm, 0.8 mm pitch), RoHS-compliant, moisture sensitivity level 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed serial DRAM applications.

Compared with S27KS0641DPBHV020 and W958D8MBYA1I, the S80KS2563GABHV023 uniquely combines AEC-Q100 Grade 2 qualification, RWDS-based refresh latency signaling, and 256 Mb density in a drop-in-compatible 24-ball FBGA - making it the sole option for automotive-grade, timing-deterministic xSPI memory expansion.

Availability

S80KS2563GABHV023 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial HMIs, edge AI sensor hubs, and smart home gateways requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for S80KS2563GABHV023 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D and manufacturing infrastructure.

The HYPERRAM™ product line targets high-bandwidth, low-pin-count memory expansion for resource-constrained MCUs and SoCs - bridging the gap between NOR flash density and SRAM speed without refresh complexity.

FAQ

What is the function of the RWDS pin in S80KS2563GABHV023?

RWDS is a bidirectional signal used as both a read data strobe and a write data mask. During read transactions, it toggles synchronously with DQ to indicate valid data edges. During writes, it acts as a byte-enable mask. Critically, it asserts HIGH before a read to signal required refresh latency (tRFH), which the host must honor before sampling DQ.

Does S80KS2563GABHV023 require external refresh commands from the host?

No. The device contains autonomous self-refresh logic that manages all DRAM array refresh cycles internally. The host interacts with it as a pseudo-static RAM - issuing only xSPI commands without refresh scheduling. Refresh occurs transparently during idle CS# intervals or inserted as tRFH latency during read setup.

Can S80KS2563GABHV023 operate with single-ended clock only?

Yes. The device supports single-ended CK input by default. Differential CK/CK# is optional and enabled via configuration register bit CR0[7]. When using single-ended mode, CK# must be tied to VSS or VCCQ per datasheet guidance to avoid floating inputs and ensure signal integrity.

What burst length configurations are supported for linear vs. wrapped modes?

The device supports linear bursts of 16, 32, 64, or 128 bytes. Wrapped bursts are fixed at those same lengths. Hybrid mode combines one wrapped burst followed by linear bursts - configured via CR0[1:0] and CR1[1:0] bits. All burst types are selectable per transaction using xSPI command opcodes.