Infineon Technologies S80KS2564GACHA040

Overview

S80KS2564GACHA040 from Infineon Technologies is a 256 Mb pseudo-static RAM (PSRAM) with self-refresh DRAM architecture, implementing the HYPERBUS™ Extended-IO x16 interface. It operates at 1.8 V (1.7–2.0 V range), supports DDR transfers up to 200 MHz, delivers up to 800 MBps throughput, and features configurable burst lengths (16–128 words) and partial/full array refresh - deployed in automotive infotainment head units requiring low-pin-count, high-bandwidth external memory.

For engineers reviewing the S80KS2564GACHA040 datasheet, S80KS2564GACHA040 pinout, S80KS2564GACHA040 application, or S80KS2564GACHA040 equivalent, key selection criteria include HYPERBUS™ timing compliance, RWDS bidirectional strobe behavior, AEC-Q100 Grade 2 temperature support (–40°C to +105°C), and FBGA-49 package compatibility with high-density automotive PCB layouts.

Technical Context

The device integrates on-die refresh control logic that autonomously manages DRAM array refresh without host intervention, presenting a static RAM interface abstraction to the host controller. Its HYPERBUS™ Extended-IO interface uses only 20 signals (21 with optional differential clock), with command/address and data multiplexed over DQ[15:0], and RWDS serving dual roles: initial latency indicator during CA transfer and source-synchronous read strobe / write mask during data phases.

Transactions are burst-oriented with linear or wrapped addressing modes; wrapped bursts align to cache-line boundaries (e.g., 32-word wrap for 128-byte lines), while hybrid burst mode enables one wrapped segment followed by linear continuation. All I/Os are LV-CMOS compatible, and clocking supports both single-ended (CK) and differential (CK/CK#) configurations with center-aligned data capture.

Key Specifications

Pinout & Package

Package: 49-ball FBGA (7 mm × 7 mm, 0.8 mm pitch), RoHS-compliant, optimized for thermal dissipation and high-density automotive PCB routing.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PSRAM applications.

Compared with S27KL0641DPBHI020, S80KS2564GACHA040 delivers 2× memory density and 20% higher throughput; versus W9825G6JH-6I, it eliminates host refresh overhead and reduces design complexity despite identical capacity - critical for ASIL-B–compliant automotive software stacks.

Availability

S80KS2564GACHA040 is available at Aetrix Electronics and suitable for automotive instrument clusters, ADAS camera preprocessing pipelines, and telematics control units requiring stable component supply across extended product lifecycles.

Supply support for S80KS2564GACHA040 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive microcontrollers, and memory solutions, with global manufacturing and automotive qualification expertise.

This device belongs to the HYPERRAM™ family - designed specifically to replace parallel NOR/NAND and SRAM in automotive and industrial systems where pin count, power, and ease of interface integration are critical constraints.

FAQ

What is the function of the RWDS[1:0] signal in S80KS2564GACHA040?

RWDS[1:0] is a bidirectional signal performing three distinct roles: (1) indicating initial access latency during command/address transfer, (2) acting as a source-synchronous read data strobe (edge-aligned with DQ), and (3) serving as a write data mask (HIGH = masked word, LOW = valid write). This eliminates need for separate RD/WR strobes and simplifies timing closure in high-speed automotive designs.

Does S80KS2564GACHA040 require external refresh circuitry?

No. The device contains fully autonomous on-die refresh logic that manages DRAM array refresh during idle cycles or configurable partial-array intervals. The host processor interacts with it as a static RAM - no refresh commands, timers, or scheduling are required, significantly reducing firmware complexity and qualification effort in automotive safety-critical systems.

How does the HYPERBUS™ Extended-IO interface reduce pin count compared to traditional parallel interfaces?

HYPERRAM™ uses a 16-bit multiplexed DQ bus for command, address, and data, combined with only 20–21 total signals (including CS#, CK/CK#, RWDS, RESET#). This replaces conventional 32+ pin parallel NOR/NAND interfaces, cutting PCB layer count, routing congestion, and EMI emissions - especially valuable in space-constrained automotive modules with strict EMC requirements.

What automotive qualification level does S80KS2564GACHA040 meet?

S80KS2564GACHA040 is qualified to AEC-Q100 Grade 2 (–40°C to +105°C), validated for use in under-hood and cabin-mounted electronic control units. It undergoes stress testing including HTOL, TC, and ESD per AEC-Q100 Rev G, and supports functional safety development per ISO 26262 ASIL-B requirements through documented failure modes and FIT rates in Infineon's reliability reports.