Infineon Technologies S80KS2564GACHA043

Overview

S80KS2564GACHA043 from Infineon Technologies is a 256 Mb self-refresh DRAM (PSRAM) with HYPERBUS™ Extended-IO x16 interface, 1.8 V nominal supply, 200 MHz max clock rate, and AEC-Q100 Grade 2 (–40°C to +105°C) qualification. It functions as a high-bandwidth, low-pin-count external memory for automotive microcontrollers requiring seamless SRAM-like access to DRAM density-used in ADAS domain controllers for real-time buffer storage during sensor fusion.

For engineers reviewing the S80KS2564GACHA043 datasheet, S80KS2564GACHA043 pinout, S80KS2564GACHA043 application, or S80KS2564GACHA043 equivalent, key selection criteria include HYPERBUS™ DDR timing compliance, RWDS bidirectional strobe behavior, configurable burst lengths (16–128 words), partial array refresh support, and FBGA-49 thermal/mechanical fit in space-constrained automotive modules.

Technical Context

The device implements a self-refresh DRAM core managed entirely by on-die logic, eliminating host refresh overhead while maintaining pseudo-static behavior. Its HYPERBUS™ Extended-IO interface uses a 16-bit DDR data bus (DQ[15:0]) synchronized to single-ended or differential CK/CK#, with RWDS[1:0] serving dual roles: initial latency indicator at transaction start and edge-aligned read strobe / write mask during data transfer.

Command/address is multiplexed over DQ[15:0] in six-byte sequences; all transactions begin with CS# assertion and CA transfer, followed by programmable initial latency (1× or 2× count). Burst modes-linear or wrapped (16/32/64/128 words)-are register-configurable, and hybrid burst (wrapped + linear) supports cache-line fill with sequential continuation.

Key Specifications

Pinout & Package

Package: 49-ball FBGA (7 mm × 7 mm, 0.8 mm pitch), RoHS-compliant, moisture sensitivity level 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PSRAM applications.

Compared with S27KL0641DPBHI020 and W9825G6JH-6I, the S80KS2564GACHA043 uniquely combines AEC-Q100 Grade 2 operation, RWDS-based write masking, and 256 Mb density in a 49-ball FBGA - enabling direct drop-in upgrades in existing HYPERBUS™ automotive designs without layout or firmware changes.

Availability

S80KS2564GACHA043 is available at Aetrix Electronics and suitable for ADAS sensor hubs, automotive infotainment framestores, domain controller code execution, and telematics secure boot logging requiring stable component supply across automotive production lifecycles.

Supply support for S80KS2564GACHA043 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D and manufacturing infrastructure.

The HYPERRAM™ product line targets automotive and industrial systems needing high-density, low-pin-count external memory with SRAM-like usability - specifically engineered to replace legacy parallel NOR/NAND and reduce MCU memory bottlenecks in safety-critical real-time applications.

FAQ

Does S80KS2564GACHA043 support true XIP (eXecute-In-Place) without software workarounds?

Yes. The device supports deterministic, stall-free XIP operation due to its self-refresh architecture and fixed 35 ns tACC with no hidden refresh-induced latency. Host MCUs can map instruction space directly to HYPERRAM™ address space, provided the HYPERBUS™ controller supports command pipelining and burst prefetch - verified in Infineon's AURIX™ TC3xx reference designs.

What is the actual power consumption during Deep Power Down mode, and how is it measured?

Deep Power Down current is 15 μA maximum at VCC = VCCQ = 1.8 V and TA = +25°C, per Section 9.4 of the datasheet. This value is measured with CS# HIGH, RESET# HIGH, CK stopped, and all DQ/RWDS/CK pins held at valid logic levels - representing the lowest sustained current state for long-term ECU sleep.

Can RWDS[1:0] be used for write data masking on a per-word basis within a single burst?

Yes. During write bursts, each 16-bit word transfer is individually masked by the corresponding RWDS[1:0] state: HIGH prevents that word from updating memory, LOW allows write. This enables precise 16-bit alignment of non-word-aligned data and merging of multiple partial writes - confirmed in Figure 3 and Section 4.3 of the datasheet.

Is the 49-ball FBGA package compatible with standard automotive reflow profiles, and what is its JEDEC moisture sensitivity level?

Yes. The package complies with IPC/JEDEC J-STD-020D.3 and is rated MSL Level 3 (floor life 168 hours at ≤30°C/60% RH). Reflow peak temperature is 260°C max for 30 seconds, matching standard lead-free automotive assembly processes - detailed in Section 11.1 of the datasheet.