Infineon Technologies S80KS2564GACHB040

Overview

S80KS2564GACHB040 from Infineon is a 256 Mb pseudo-static RAM (PSRAM) implementing self-refresh DRAM architecture with HYPERBUS™ Extended-IO x16 interface, 1.8 V nominal supply, 200 MHz max clock rate, and AEC-Q100 Grade 2 automotive qualification (–40°C to +105°C). It delivers up to 800 MBps throughput via DDR transfers on DQ[15:0], uses bidirectional RWDS for read strobe/write mask, and supports configurable burst lengths (16–128 words) in linear or wrapped mode.

For engineers reviewing the S80KS2564GACHB040 datasheet, S80KS2564GACHB040 pinout, S80KS2564GACHB040 application, or S80KS2564GACHB040 equivalent, key selection criteria include HYPERBUS™ timing compliance, RWDS-driven latency handling, partial array refresh configuration, and FBGA-49 thermal-mechanical suitability for automotive ADAS and infotainment memory expansion.

Technical Context

This PSRAM integrates dynamic DRAM cells with on-die refresh control logic, eliminating host-managed refresh while maintaining static RAM-like interface behavior. Its HYPERBUS™ Extended-IO protocol uses center-aligned command/address and edge-aligned read data with RWDS, supporting both single and dual-clock (CK/CK#) configurations across 20–21 signal counts.

The device implements hybrid power modes including Hybrid Sleep and Deep Power Down, with configurable output drive strength and partial array refresh (1/8, 1/4, 1/2), enabling precise trade-offs between latency, bandwidth, and current draw (e.g., 1.55 μA standby, 15 μA deep power down).

Key Specifications

Pinout & Package

Package: 49-ball FBGA (7 mm × 7 mm, 0.5 mm pitch), RoHS-compliant, moisture sensitivity level 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PSRAM applications.

Compared with S27KL0641DPBHI020 and IS66WV12816EBLL-100B3LI, the S80KS2564GACHB040 uniquely combines 256 Mb density, 200 MHz HYPERBUS™ performance, AEC-Q100 Grade 2 operation, and true self-refresh - making it the sole option for high-end automotive systems requiring scalable, low-power, drop-in memory expansion without host refresh overhead.

Availability

S80KS2564GACHB040 is available at Aetrix Electronics and suitable for ADAS sensor fusion units, automotive digital clusters, and telematics control units requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for S80KS2564GACHB040 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and memory solutions, with global R&D and manufacturing infrastructure.

The HYPERRAM™ product line targets automotive and industrial systems needing high-density, low-pin-count external memory with SRAM-like ease-of-use and DRAM-like economics - specifically optimized for SoC memory expansion where board space and signal integrity are constrained.

FAQ

What is the function of RWDS[1:0] in read versus write operations?

RWDS[1:0] serves three distinct roles: during command/address transfer, it signals required initial latency; during reads, it acts as a source-synchronous read data strobe with edge-aligned DQ; during writes, it functions as a 16-bit write mask (HIGH = masked, LOW = written). This eliminates need for separate strobe and mask signals, reducing pin count while preserving timing precision.

Does S80KS2564GACHB040 require external refresh circuitry?

No. The device contains fully autonomous on-die refresh logic that manages all DRAM array refresh cycles without host intervention. The host sees only a static RAM interface - no refresh commands, timers, or scheduling are needed. Internal refresh occurs during idle periods or within configurable partial-array windows, ensuring data retention across all supported power modes.

How does the HYPERBUS™ Extended-IO interface differ from standard SPI or QSPI?

HYPERRAM™ uses a DDR x16 parallel interface with dedicated clock and RWDS, achieving 800 MBps - over 8× faster than quad-SPI's ~100 MBps limit. Unlike SPI, it supports true burst reads/writes with no command overhead per word, and includes hardware flow control via RWDS latency signaling - critical for real-time automotive applications where deterministic access timing is mandatory.

Can S80KS2564GACHB040 operate with only single-ended clock (CK) instead of differential (CK/CK#)?

Yes. The device supports both single-ended CK and optional differential CK/CK# modes. Using single-ended CK reduces signal count from 21 to 20 pins and simplifies PCB layout, while maintaining full 200 MHz operation and timing compliance. Differential mode is recommended only in high-noise environments where improved jitter immunity justifies the extra routing complexity and pin.